Patents by Inventor Olivier Desplats

Olivier Desplats has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9123652
    Abstract: A method for producing patterns includes inclined flanks from a face of a substrate. A protective mask is formed covering at least two masked areas of the face of the substrate and defining at least one intermediate space. An inclined flank is plasma etched from each masked area, wherein the etching forms continuous passivation layer on the inclined flanks producing autolimitation of the etching when the inclined flanks join each other. The etching is carried out in a chamber and includes the introduction into the chamber of a gas additional to the plasma. The additional gas includes molecules of a chemical species participating in the formation of the passivation layer, the quantity of gas in the chamber being controlled so that the chamber contains a quantity of molecules of the species sufficient to form the passivation layer continuously.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: September 1, 2015
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CNRS-Centre National de la Recherche Scientifique
    Inventors: Olivier Desplats, Thierry Chevolleau, Maxime Darnon, Cecile Gourgon
  • Publication number: 20140242801
    Abstract: A method for producing patterns includes inclined flanks from a face of a substrate. A protective mask is formed covering at least two masked areas of the face of the substrate and defining at least one intermediate space. An inclined flank is plasma etched from each masked area, wherein the etching forms continuous passivation layer on the inclined flanks producing autolimitation of the etching when the inclined flanks join each other. The etching is carried out in a chamber and includes the introduction into the chamber of a gas additional to the plasma. The additional gas includes molecules of a chemical species participating in the formation of the passivation layer, the quantity of gas in the chamber being controlled so that the chamber contains a quantity of molecules of the species sufficient to form the passivation layer continuously.
    Type: Application
    Filed: February 25, 2014
    Publication date: August 28, 2014
    Applicants: CNRS-CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Olivier Desplats, Thierry Chevolleau, Maxime Darnon, Cecile Gourgon