Abstract: Devices and methods for a rugged semiconductor radiation detector are provided. The semiconductor detector may include a hermetically sealed housing and a semiconductor disposed within the housing that has a first surface and a second surface opposite one another. A first metallization layer may at least partially cover the first surface of the semiconductor and a second metallization layer may at least partially cover the second surface of the semiconductor. The first metallization layer or the second metallization layer, or both, do not extend completely to an edge of the semiconductor, thereby providing a nonconductive buffer zone. This reduces electrical field stresses that occur when a voltage potential is applied between the first metallization layer and the second metallization layer and reduces a likelihood of electrical failure (e.g., due to arcing).

Abstract: Devices and methods for a rugged semiconductor radiation detector are provided. The semiconductor detector may include a hermetically sealed housing and a semiconductor disposed within the housing that has a first surface and a second surface opposite one another. A first metallization layer may at least partially cover the first surface of the semiconductor and a second metallization layer may at least partially cover the second surface of the semiconductor. The first metallization layer or the second metallization layer, or both, do not extend completely to an edge of the semiconductor, thereby providing a nonconductive buffer zone. This reduces electrical field stresses that occur when a voltage potential is applied between the first metallization layer and the second metallization layer and reduces a likelihood of electrical failure (e.g., due to arcing).

Abstract: Devices and methods for a rugged semiconductor radiation detector are provided. The semiconductor detector may include a hermetically sealed housing and a semiconductor disposed within the housing that has a first surface and a second surface opposite one another. A first metallization layer may at least partially cover the first surface of the semiconductor and a second metallization layer may at least partially cover the second surface of the semiconductor. The first metallization layer or the second metallization layer, or both, do not extend completely to an edge of the semiconductor, thereby providing a nonconductive buffer zone. This reduces electrical field stresses that occur when a voltage potential is applied between the first metallization layer and the second metallization layer and reduces a likelihood of electrical failure (e.g., due to arcing).

Abstract: Devices and methods for a rugged semiconductor radiation detector are provided. The semiconductor detector may include a hermetically sealed housing and a semiconductor disposed within the housing that has a first surface and a second surface opposite one another. A first metallization layer may at least partially cover the first surface of the semiconductor and a second metallization layer may at least partially cover the second surface of the semiconductor. The first metallization layer or the second metallization layer, or both, do not extend completely to an edge of the semiconductor, thereby providing a nonconductive buffer zone. This reduces electrical field stresses that occur when a voltage potential is applied between the first metallization layer and the second metallization layer and reduces a likelihood of electrical failure (e.g., due to arcing).

Abstract: Method and system for analyzing electrical pulses contained in a pulse train signal representative of the interaction of x-ray bursts with a nuclear detector configured for subsurface disposal. The pulse train signal is sampled to form a digitized signal. The total energy deposited at the detector during an x-ray burst is determined from the digitized signal, and a count rate of x-ray pulses from the burst is determined. A subsurface parameter is determined using the total energy deposit.

Abstract: Embodiments described herein are directed to methods and neutron detectors for use in downhole and other oilfield applications. In particular, the neutron detector includes a scintillator formed at least partially from an elpasolite material. In a more specific embodiment, the scintillator is formed from a Cs2LiYCl6 (“CLYC”) material.

Abstract: The invention provides a method for optimizing the spectroscopy performance of a spectroscopy scintillator by surrounding the scintillator by a reflector material, performing a scan measuring resolution and light output at three or more axial locations on the crystal, where at least one location is close to the PMT or below the crystal (near the PMT) at least one location is at the end away from the PMT of the scintillator), and adjusting the surface finish of the crystal and/or the reflector to obtain equal light output and optimal resolution over the length and different azimuth of the crystal.

Abstract: A neutron detecting device using a neutron-reactive material as the source of charged particles to feed conventional dynode-based electron multiplier which not gas-filled (i.e., with 3He). The detector comprises a neutron-reacting material that produces charged particles, coupled with an electron multiplier that is known for use in photomultipliers. The neutron-reacting material is deposited on a substrate at the entrance to the electron multiplier. Charged particles from the neutron-reacting material impinge on the first dynode of the electron multiplier, where, in turn, electrons are generated. The secondary electrons are collected by a second dynode, and the charge so collected is amplified in each succeeding dynode stage in a cascade effect. The charge pulse from the anode is processed by subsequent pulse processing electronics and counting electronics to provide a count rate that is proportional to the neutron flux incident on the neutron-reacting material.

Abstract: The invention provides a method for optimizing the spectroscopy performance of a spectroscopy scintillator by surrounding the scintillator by a reflector material, performing a scan or more sectors measuring resolution and light output at three or more axial locations on the crystal, where at least one location is close to the PMT or below the crystal (near the PMT) at least one location is at the end away from the PMT of the scintillator), and adjusting the surface finish of the crystal and/or the reflector to obtain equal light output and optimal resolution over the length and different azimuth of the crystal.

Abstract: A well logging instrument includes a source of high energy neutrons arranged to bombard a formation surrounding the instrument. A scintillator sensitive to gamma radiation resulting from interaction of the high energy neutrons with the formation is disposed in the instrument. A neutron shielding material surrounds the scintillator. A neutron moderator surrounds the neutron shielding material. An amplifier is optically coupled to the scintillator.

Abstract: Method and system for analyzing electrical pulses contained in a pulse train signal representative of the interaction of x-ray bursts with a nuclear detector configured for subsurface disposal. The pulse train signal is sampled to form a digitized signal. The total energy deposited at the detector during an x-ray burst is determined from the digitized signal, and a count rate of x-ray pulses from the burst is determined. A subsurface parameter is determined using the total energy deposit.

Abstract: A well logging instrument includes a source of high energy neutrons arranged to bombard a formation surrounding the instrument. A scintillator sensitive to gamma radiation resulting from interaction of the high energy neutrons with the formation is disposed in the instrument. A neutron shielding material surrounds the scintillator. A neutron moderator surrounds the neutron shielding material. An amplifier is optically coupled to the scintillator.

Abstract: An advanced method for determining formation density in an array-detector density tool uses three or more detectors to yield an improved accuracy and precision of the formation density measurement even in the presence of a large standoff between the tool and the formation. A more accurate photoelectric factor is determined through a new single detector algorithm. Use of the information on the photoelectric effect and the density from the three detectors allows the measurement of a photoelectric effect compensated for stand off and the photoelectric factor of the mudcake. The use of the multi-detector density answers allows for a consistency check and therefore a much improved quality control of the density measurement.