Abstract: The invention relates to a polarization-insensitive optical filter centered on a wavelength measured in vacuum, comprising: first and second waveguides each having a propagation mode; a first grating formed in or on the surface of the first waveguide, the first grating being periodical at least along a first axis Ox defining a first orthonormal base Oxyz; a second grating formed in or on the surface of the second waveguide, the second grating being periodical at least along a second axis Ox? defining a second orthonormal base Ox?y?z; wherein the first and second grating are provided one above another and are such that the first axis Ox and the second axis Ox? define an angle ? different from ±?/2 radians so that, when the first grating is illuminated by a light beam, the propagation modes are excited and have orthogonal fields for an angle of incidence of the light beam.

Abstract: The invention relates to a polarization-insensitive optical filter centered on a wavelength (?0) measured in vacuum, comprising: first and second waveguides each having a propagation mode; a first grating formed in or on the surface of the first waveguide, the first grating being periodical at least along a first axis Ox defining a first orthonormal base Oxyz; a second grating formed in or on the surface of the second waveguide, the second grating being periodical at least along a second axis Oxy? defining a second orthonormal base Ox?y?z; wherein the first and second grating are provided above each other and are such that the first axis Ox and the second axis Ox? define an angle ? different from ±?/2 radians so that, when the first grating is illuminated by a light beam, the first and second propagation modes are excited and have orthogonal fields for a predetermined angle of incidence of the light beam.

Abstract: A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 ?m, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPp with x?0.48, y?1?z?p, z?0.05, p?0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).

Abstract: A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 ?m, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPp with x?0.48, y?1-z-p, z?0.05, p?0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).