Abstract: A powder bed fusion additive manufacturing machine (10) comprises: a manufacturing chamber (12), at least one mobile powder-receiving surface (28) and a manufacturing zone (20) situated inside the manufacturing chamber, a powder-spreading device (30), and at least one powder-distribution device (32) distributing powder over the mobile receiving surface. The distribution device comprises a buffer reservoir (40) connected to a powder supply (42), and a powder-distribution point (P1) beneath which a mobile receiving surface (28) moves, and the powder-distribution device comprises a screw-type metering device (44) connecting the buffer reservoir (40) and the powder-distribution point (P1) and enabling the generation of a continuous stream of powder from the buffer reservoir towards the powder-distribution point.

Abstract: A exemplary semiconductor device includes a first gate structure overlying a surface of the semiconductor body, the first gate structure being silicided. A second gate structure overlies the surface of the semiconductor body and not being silicided. An oxide layer overlies the second gate structure and extends toward the first gate structure. A silicon nitride region is laterally spaced from the second gate structure and overlies a portion of the oxide layer between the first gate structure and the second gate structure.

Abstract: A exemplary semiconductor device includes a first gate structure overlying a surface of the semiconductor body, the first gate structure being silicided. A second gate structure overlies the surface of the semiconductor body and not being silicided. An oxide layer overlies the second gate structure and extends toward the first gate structure. A silicon nitride region is laterally spaced from the second gate structure and overlies a portion of the oxide layer between the first gate structure and the second gate structure.

Abstract: A powder bed fusion additive manufacturing machine (10) comprises: a manufacturing chamber (12), at least one mobile powder-receiving surface (28) and a manufacturing zone (20) situated inside the manufacturing chamber, a powder-spreading device (30), and at least one powder-distribution device (32) distributing powder over the mobile receiving surface. The distribution device comprises a buffer reservoir (40) connected to a powder supply (42), and a powder-distribution point (P1) beneath which a mobile receiving surface (28) moves, and the powder-distribution device comprises a screw-type metering device (44) connecting the buffer reservoir (40) and the powder-distribution point (P1) and enabling the generation of a continuous stream of powder from the buffer reservoir towards the powder-distribution point.

Abstract: A method of fabricating a semiconductor device includes forming a protective layer on a portion of the semiconductor body that is not to be silicided. The protective layer includes a silicon oxide layer and a silicon nitride layer over the silicon oxide layer. At least a portion of the silicon nitride layer of the protective layer is removed. A silicided portion of the semiconductor body is laterally spaced from the protective layer. The siliciding is performed by an ion sputtering in a plasma environment on both the silicided portion of the semiconductor body and the portion of the semiconductor body that is not to be silicided.

Abstract: A method of fabricating a semiconductor device includes forming a protective layer on a portion of the semiconductor body that is not to be silicided. The protective layer includes a silicon oxide layer and a silicon nitride layer over the silicon oxide layer. At least a portion of the silicon nitride layer of the protective layer is removed. A silicided portion of the semiconductor body is laterally spaced from the protective layer. The siliciding is performed by an ion sputtering in a plasma environment on both the silicided portion of the semiconductor body and the portion of the semiconductor body that is not to be silicided.

Abstract: A method for manufacturing a SPAD photodiode starts with the delimitation of a formation area for the SPAD photodiode in a layer of semiconductor material that is doped with a first dopant type. Dopant of a second dopant type is implanted in the layer of semiconductor material to form a buried region within the formation area. An epitaxial layer is then grown on the layer of semiconductor material at least over the formation area. MOS transistors are then formed on and in the epitaxial layer at locations outside of the formation area.