Patents by Inventor Olivier Gravrand
Olivier Gravrand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10141470Abstract: The invention relates to a photodiode type structure (comprising: a support (100) including at least one semiconductor layer, the semiconductor layer (120) including of a first semiconductor zone (10) of a first type of conductivity and a mesa (130) in contact with the semiconductor layer (120). The mesa (130) includes of a second semiconductor zone (20), known as absorption zone, said second semiconductor zone (20) being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone (30) is depleted in the absence of polarization of the structure (1). The structure (1) further comprises a third semiconductor zone (30) of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone (30) is interposed between the first and the second semiconductor zones (10, 20) while being at least partially arranged in the semiconductor layer (120).Type: GrantFiled: February 15, 2017Date of Patent: November 27, 2018Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Francois Boulard, Giacomo Badano, Olivier Gravrand
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Patent number: 10128386Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.Type: GrantFiled: June 19, 2013Date of Patent: November 13, 2018Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Francois Boulard, Roch Espiau De Lamaestre, David Fowler, Olivier Gravrand, Johan Rothman
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Publication number: 20170244001Abstract: The invention relates to a photo bode type structure (comprising: a support (100) including at least one semiconductor layer, the semiconductor layer (120) including of a first semiconductor zone (10) of a first type of conductivity and a mesa (130) in contact with the semiconductor layer (120). The mesa (130) includes of a second semiconductor zone (20), known as absorption zone, said second semiconductor zone (20) being of a second type of conductivity. The second semiconductor zone has a concentration of majority carriers such that the second semiconductor zone (30) is depleted in the absence of polarization of the structure (1). The structure (1) further comprises a third semiconductor zone (30) of the second type of conductivity made of a third material transparent in the absorbed wavelength range. The third semiconductor zone (30) is interposed between the first and the second semiconductor zones (10, 20) while being at least partially arranged in the semiconductor layer (120).Type: ApplicationFiled: February 15, 2017Publication date: August 24, 2017Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Francois BOULARD, Giacomo BADANO, Olivier GRAVRAND
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Patent number: 9673350Abstract: A semi-conducting component including a semi-conducting layer of a first conductivity type including a plurality of semi-conducting zones of a second conductivity type opposite that of the semi-conducting layer, and an insulating layer. The component further includes a first bias mechanism configured to bias the semi-conducting layer and a second bias mechanism configured to bias a semi-conducting zone. The first bias mechanism includes a conducting layer in contact with the insulating layer and which includes passageways for each second bias mechanism with the spacing between the conducting layer and the second bias mechanism which is located facing the corresponding semi-conducting zone.Type: GrantFiled: August 12, 2013Date of Patent: June 6, 2017Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Francois Boulard, Olivier Gravrand
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Patent number: 9640701Abstract: A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.Type: GrantFiled: October 21, 2015Date of Patent: May 2, 2017Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Olivier Gravrand, Johan Rothman
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Publication number: 20160111580Abstract: A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.Type: ApplicationFiled: October 21, 2015Publication date: April 21, 2016Applicant: Commissariat a L'Energie Atomique et aux Energies AlternativesInventors: Olivier GRAVRAND, Johan ROTHMAN
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Publication number: 20150340395Abstract: A photodetector element for infrared light radiation of a given wavelength, in a medium that is at least partially transparent to the infrared light radiation to be detected. The photodetector includes a layer of a partially absorbent semiconductor and a periodic structure placed at a distance from and in the near field of the semiconductor layer and exciting propagation modes parallel to the semiconductor layer, of the infrared light radiation to be detected. There is a perimetric electrical contact that frames the outline of the photodetector element and extends perpendicularly relative to the planes defined by the semiconductor layer and the periodic structure, which makes contact with said semiconductor layer, and that also forms an optical mirror for the modes excited by the periodic structure.Type: ApplicationFiled: June 19, 2013Publication date: November 26, 2015Inventors: Matthieu Duperron, Roch Espiau de Lamaestre, Olivier Gravrand
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Publication number: 20150303320Abstract: A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.Type: ApplicationFiled: June 19, 2013Publication date: October 22, 2015Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Francois BOULARD, Roch ESPIAU DE LAMAESTRE, David FOWLER, Olivier GRAVRAND, Johan ROTHMAN
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Patent number: 9165967Abstract: A semiconducting structure configured to receive electromagnetic radiation and transform the received electromagnetic radiation into an electric signal, the semiconductor structure including a semiconducting support within a first surface defining a longitudinal plane, a first zone with a first type of conductivity formed in the support with a second zone with a second type of conductivity that is opposite of the first type of conductivity to form a semiconducting junction. A mechanism limiting lateral current includes a third zone formed in the support in lateral contact with the second zone, the third zone having the second type of conductivity for which majority carriers are electrons. The third zone has a sufficient concentration of majority carriers to have an increase in an apparent gap due to a Moss-Burstein effect.Type: GrantFiled: November 27, 2012Date of Patent: October 20, 2015Assignee: Commissariat á l'énergies atomique et aux énergies alternativesInventors: Olivier Gravrand, Gerard Destefanis
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Publication number: 20150207027Abstract: A semi-conducting component including a semi-conducting layer of a first conductivity type including a plurality of semi-conducting zones of a second conductivity type opposite that of the semi-conducting layer, and an insulating layer. The component further includes a first bias mechanism configured to bias the semi-conducting layer and a second bias mechanism configured to bias a semi-conducting zone. The first bias mechanism includes a conducting layer in contact with the insulating layer and which includes passageways for each second bias mechanism with the spacing between the conducting layer and the second bias mechanism which is located facing the corresponding semi-conducting zone.Type: ApplicationFiled: August 12, 2013Publication date: July 23, 2015Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: François Boulard, Olivier Gravrand
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Patent number: 9048357Abstract: A semi-conducting structure, configured to receive an electromagnetic radiation and to transform the electromagnetic radiation into an electric signal, including: a first zone and a second zone of a same conductivity type and of same elements; a barrier zone, provided between the first and second zones, for acting as a barrier to majority carriers of the first and second zones on a barrier thickness, the barrier zone having its lowest bandgap energy defining a barrier proportion; and a first interface zone configured to interface the first zone and the barrier zone on a first interface thickness, the first interface zone including a composition of elements which is varied from a proportion corresponding to that of the first material to the barrier proportion, the first interface thickness being at least equal to half the barrier thickness.Type: GrantFiled: January 2, 2013Date of Patent: June 2, 2015Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Olivier Gravrand, Alexandre Ferron
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Publication number: 20150008551Abstract: A semi-conducting structure, configured to receive an electromagnetic radiation and to transform the electromagnetic radiation into an electric signal, including: a first zone and a second zone of a same conductivity type and of same elements; a barrier zone, provided between the first and second zones, for acting as a barrier to majority carriers of the first and second zones on a barrier thickness, the barrier zone having its lowest bandgap energy defining a barrier proportion; and a first interface zone configured to interface the first zone and the barrier zone on a first interface thickness, the first interface zone including a composition of elements which is varied from a proportion corresponding to that of the first material to the barrier proportion, the first interface thickness being at least equal to half the barrier thickness.Type: ApplicationFiled: January 2, 2013Publication date: January 8, 2015Applicant: Commissariat a l'energie atomique et aux ene altInventors: Olivier Gravrand, Alexandre Ferron
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Publication number: 20140312446Abstract: A semiconducting structure configured to receive electromagnetic radiation and transform the received electromagnetic radiation into an electric signal, the semiconductor structure including a semiconducting support within a first surface defining a longitudinal plane, a first zone with a first type of conductivity formed in the support with a second zone with a second type of conductivity that is opposite of the first type of conductivity to form a semiconducting junction. A mechanism limiting lateral current includes a third zone formed in the support in lateral contact with the second zone, the third zone having the second type of conductivity for which majority carriers are electrons. The third zone has a sufficient concentration of majority carriers to have an increase in an apparent gap due to a Moss-Burstein effect.Type: ApplicationFiled: November 27, 2012Publication date: October 23, 2014Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Olivier Gravrand, Gerard Destefanis
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Patent number: 8786042Abstract: This photodetector capable of detecting electromagnetic radiation comprises: a doped semiconductor absorption layer for said radiation, capable of converting said radiation into charge carriers; a reflective layer that reflects the incident radiation that is not absorbed by semiconductor layer towards the latter, located underneath semiconductor layer; and a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface Plasmon resonator so as to concentrate the incident electromagnetic radiation on metallic structure in the field concentration zones of semiconductor layer. Semiconductor zones for collecting charge carriers that are oppositely doped to the doping of semiconductor layer are formed in said semiconductor layer and have a topology that complements that of the field concentration zones.Type: GrantFiled: November 29, 2010Date of Patent: July 22, 2014Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Olivier Gravrand, Gérard Destefanis, Jérôme Le Perchec
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Patent number: 8759932Abstract: This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and for each semiconductor zone, a conductor that passes through the photodetector from reflective layer to at least semiconductor zone and is electrically insulated from metallic structure, with semiconductor zone associated with corresponding conductor thus determining an elementary detection surface of the photodetector.Type: GrantFiled: November 29, 2010Date of Patent: June 24, 2014Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Olivier Gravrand, Gérard Destefanis, Jérôme Le Perchec
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Patent number: 8759873Abstract: A bispectral detector comprising upper and lower semiconductor layers of a first conductivity type in order to absorb a first and a second electromagnetic spectrum, separated by an intermediate layer that forms a barrier; semiconductor zones of a second conductivity type implanted in upper layer and lower layer and each implanted at least partially in the bottom of an opening that passes through upper layer and intermediate layer; and conductor elements connected to semiconductor zones. At least that part of each opening that passes through upper layer is separated from the latter by a semiconductor cap layer: whereof the concentration of dopants of the second conductivity type is greater than 1017 cm?3; and whereof the thickness is chosen as a function of said concentration so that it exceeds the minority carrier diffusion length in the cap layer.Type: GrantFiled: September 13, 2011Date of Patent: June 24, 2014Assignee: Commissariat a l'Energie Atomique et Aux Energies AlternativesInventors: Olivier Gravrand, Jacques Baylet
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Patent number: 8618622Abstract: Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a mirror above the semiconductor layer, and placed between the mirror and the semiconductor layer, a periodic grating of metallic patterns, the mirror and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer.Type: GrantFiled: December 13, 2011Date of Patent: December 31, 2013Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Roch Espiau De Lamaestre, Salim Boutami, Olivier Gravrand, Jérôme Le Perchec
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Patent number: 8441089Abstract: This bispectral detector comprises a plurality of unitary elements for detecting a first and a second electromagnetic radiation range, consisting of a stack of upper and lower semiconductor layers of a first conductivity type which are separated by an intermediate layer that forms a potential barrier between the upper and lower layers; and for each unitary detection element, two upper and lower semiconductor zones of a second conductivity type opposite to the first conductivity type, are arranged respectively so that they are in contact with the upper faces of the upper and lower layers so as to form PN junctions, the semiconductor zone being positioned, at least partially, in the bottom of an opening that passes through the upper and intermediate layers. The upper face of at least one of the upper and lower layers is entirely covered in a semiconductor layer of the second conductivity type.Type: GrantFiled: August 29, 2011Date of Patent: May 14, 2013Assignee: Commissariat a l′Energie Atomique et Aux Energies AlternativesInventors: Olivier Gravrand, Jacques Baylet
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Publication number: 20120181645Abstract: Backlit detector for the detection of electromagnetic radiation around a predetermined wavelength, including a semiconductor absorption layer, formed above a transparent medium, capable of transmitting at least some of said radiation, and a minor above the semiconductor layer, and placed between the minor and the semiconductor layer, a periodic grating of metallic patterns, the minor and the grating being included in a layer of material transparent to said radiation and formed on the semiconductor layer.Type: ApplicationFiled: December 13, 2011Publication date: July 19, 2012Applicant: Commissariat A L'Energie Atomique Et Aux Energies AlternativesInventors: Roch Espiau De Lamaestre, Salim Boutami Boutami, Olivier Gravrand, Jérôme Le Perchec
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Patent number: 8168478Abstract: The invention relates to a method for producing a matrix of electronic components, comprising a step of producing an active layer on a substrate, and a step of individualizing the components by forming trenches in the active layer at least until the substrate emerges. The method comprises steps of depositing a layer of functional material on the active layer, depositing a photosensitive resin on the layer of material in such a way as to fill said trenches and to form a thin film on the upper face of the components, at least partially exposing the resin to radiation while underexposing the portion of resin in the trenches, developing the resin in such a way as to remove the properly exposed portion thereof, removing the functional material layer portion that shows through after the development step, and removing the remaining portion of resin.Type: GrantFiled: August 18, 2011Date of Patent: May 1, 2012Assignee: Commissariat a l'Energie AtomiqueInventors: Francois Marion, Olivier Gravrand