Abstract: A system and method for producing a single-crystal germanium layer on a dielectric layer by producing a germanium-on-insulator assembly between the surface portions of the third material. The choice of location for these surface portions therefore makes it possible to define the zone on which it is desired to produce the germanium-on-insulator layer. The wafer may be freely chosen between a pure single-crystal silicon wafer and a silicon-on-insulator wafer. A single-crystal germanium first layer is produced on the surface portion of the silicon. The RPCVD produces a partially crystalline germanium first layer. The layer thus comprises various nuclei that have crystallized in possibly different lattices. After carrying out a recrystallization annealing operation, which makes the layer monocrystalline by recrystallizing the various nuclei in one and the same crystal lattice. Thus, the layers are continuous with the single-crystal silicon lattice.

Abstract: The process relates to the production of a layer of a single-crystal first material on a second material. The second material has at least one aperture exposing a surface portion of a single-crystal third material. The process generally includes forming an at least partially crystalline first layer of said first material on said surface portion of the third material. Then, an amorphous or partially crystalline second layer of the first material is formed on the at least partially crystalline first layer of the first material and on one part of the second material that is around said aperture. Finally, the process includes recrystallization annealing of the first material. Thus, it is possible to produce, within one and the same wafer, either transistors on a germanium-on-insulator substrate with transistors on a silicon-on-insulator substrate, or transistors on a germanium-on-insulator substrate with transistors on a silicon substrate.

Abstract: The process relates to the production of a layer of a single-crystal first material on a second material. The second material has at least one aperture exposing a surface portion of a single-crystal third material. The process generally includes forming an at least partially crystalline first layer of said first material on said surface portion of the third material. Then, an amorphous or partially crystalline second layer of the first material is formed on the at least partially crystalline first layer of the first material and on one part of the second material that is around said aperture. Finally, the process includes recrystallization annealing of the first material. Thus, it is possible to produce, within one and the same wafer, either transistors on a germanium-on-insulator substrate with transistors on a silicon-on-insulator substrate, or transistors on a germanium-on-insulator substrate with transistors on a silicon substrate.

Abstract: A system and method for producing a single-crystal germanium layer on a dielectric layer by producing a germanium-on-insulator assembly between the surface portions of the third material. The choice of location for these surface portions therefore makes it possible to define the zone on which it is desired to produce the germanium-on-insulator layer. The wafer may be freely chosen between a pure single-crystal silicon wafer and a silicon-on-insulator wafer. A single-crystal germanium first layer is produced on the surface portion of the silicon. The RPCVD produces a partially crystalline germanium first layer. The layer thus comprises various nuclei that have crystallized in possibly different lattices. After carrying out a recrystallization annealing operation, which makes the layer monocrystalline by recrystallizing the various nuclei in one and the same crystal lattice. Thus, the layers are continuous with the single-crystal silicon lattice.