Abstract: An optical focusing and collecting system includes: a first optical shaping portion, including an output surface, adapted to supply a primary light beam which is made annular; a second optical focusing and collecting portion, including a conical upper central reflective surface and a conical lower central reflective surface; a third optical return portion, including a reflective surface located between the output surface and the upper central reflective surface, along a main optical axis (?) and having transverse dimensions smaller than those of the annular primary light beam supplied by the first optical portion.

Abstract: A curable low sulfur liquid rubber composition including at least one polymer which contains, in polymerized form, at least one monomer having a carbon chain of four and a peroxide system which includes at least one organic peroxide and at least one coagent. The polymer has a vinyl content of 1% to 90% and a number average molecular weight of 800 g/mol to 70,000 g/mol. The curable low sulfur liquid rubber composition has a sulfur content of 0 to 1%, by weight, and is curable at a temperature of 100° C. to 190° C.

Abstract: A curable low sulfur liquid rubber composition including at least one polymer which contains, in polymerized form, at least one monomer having a carbon chain of four and a peroxide system which includes at least one organic peroxide and at least one coagent. The polymer has a vinyl content of 1% to 90% and a number average molecular weight of 800 g/mol to 70,000 g/mol. The curable low sulfur liquid rubber composition has a sulfur content of 0 to 1%, by weight, and is curable at a temperature of 100° C. to 190° C.

Abstract: A curable low sulfur liquid rubber composition including at least one polymer which contains, in polymerized form, at least one monomer having a carbon chain of four and a peroxide system comprising at least one organic peroxide having a 10-hour decomposition half-life temperature of from 60° C. to 100° C. The polymer has a vinyl content of 1% to 90% and a number average molecular weight of 800 g/mol to 15,000 g/mol. The curable low sulfur liquid rubber composition has a sulfur content of 0 to 1%, by weight, and is curable at a temperature of 100° C. to 140° C.

Abstract: A curable low sulfur liquid rubber composition including at least one polymer which contains, in polymerized form, at least one monomer having a carbon chain of four and a peroxide system comprising at least one organic peroxide having a 10-hour decomposition half-life temperature of from 60° C. to 100° C. The polymer has a vinyl content of 1% to 90% and a number average molecular weight of 800 g/mol to 15,000 g/mol. The curable low sulfur liquid rubber composition has a sulfur content of 0 to 1%, by weight, and is curable at a temperature of 100° C. to 140° C.

Abstract: A device (D1) is intended for processing digital data frames to be transmitted by a transport network (TN), and comprises i) a first processing means (PM1) comprising ports for receiving digital data frames and arranged for downsizing, then compressing, if necessary, and then compacting each one of these received digital data frames to produce reduced digital data frames, ii) a second processing means (PM2) arranged for aggregating at least some of these reduced digital data frames together according to aggregation information to produce frame groups, and iii) a third processing means (PM3) arranged for grouping these frame groups together with a group descriptor, defining initial arrangements of the digital data frames, according to grouping information, to produce a transport frame to be transmitted by the transport network (TN).

Abstract: We disclose an interface device configured to inter-convert CPRI data frames and Optical Transport Units (OTUs). The interface device acquires frame synchronization by temporarily storing data in a buffer bank such that translated sync characters are placed at respective predetermined locations within the buffer bank. Each translated sync character represents, in the corresponding OTU, a respective sync character of a CPRI hyperframe. The interface device is configured to distinguish translated sync characters from payload-data words of identical value based on predetermined alignment, in the buffer bank, of data temporarily stored therein for conversion into the CPRI data format. The interface device advantageously enables multiplexing of a plurality of CPRI links and aggregation and encapsulation of the multiplexed CPRI data into a stream of OTUs for transmission to the intended destination over an Optical Transport Network.

Abstract: We disclose an interface device configured to inter-convert CPRI data frames and Optical Transport Units (OTUs). The interface device acquires frame synchronization by temporarily storing data in a buffer bank such that translated sync characters are placed at respective predetermined locations within the buffer bank. Each translated sync character represents, in the corresponding OTU, a respective sync character of a CPRI hyperframe. The interface device is configured to distinguish translated sync characters from payload-data words of identical value based on predetermined alignment, in the buffer bank, of data temporarily stored therein for conversion into the CPRI data format. The interface device advantageously enables multiplexing of a plurality of CPRI links and aggregation and encapsulation of the multiplexed CPRI data into a stream of OTUs for transmission to the intended destination over an Optical Transport Network.

Abstract: An architecture and method are provided for reading and writing, in parallel or in series, an electronic memory component based on a two-dimensional matrix of two-terminal binary memory unit cells built into a crossbar architecture. The component includes a logical column-selector located outside the matrix and activating at least one column, one or more cells of which are subjected to read or write processing. Also provided is a component and method with the reading of the status of the cells by differential detection on from two cells of two different rows, either between a storage column and a constant reference column, or between two rows or two storage columns. A component is also provided in which specific selection structure is exclusively dedicated to read operations, and/or in which complementary cells in two complementary columns connected together are encoded in a single atomic operation by means of a single write current.

Abstract: A device (D1) is intended for processing digital data frames to be transmitted by a transport network (TN), and comprises i) a first processing means (PM1) comprising ports for receiving digital data frames and arranged for downsizing, then compressing, if necessary, and then compacting each one of these received digital data frames to produce reduced digital data frames, ii) a second processing means (PM2) arranged for aggregating at least some of these reduced digital data frames together according to aggregation information to produce frame groups, and iii) a third processing means (PM3) arranged for grouping these frame groups together with a group descriptor, defining initial arrangements of the digital data frames, according to grouping information, to produce a transport frame to be transmitted by the transport network (TN).

Abstract: An architecture and method are provided for reading and writing, in parallel or in series, an electronic memory component based on a two-dimensional matrix of two-terminal binary memory unit cells built into a crossbar architecture. The component includes a logical column-selector located outside the matrix and activating at least one column, one or more cells of which are subjected to read or write processing. Also provided is a component and method with the reading of the status of the cells by differential detection on from two cells of two different rows, either between a storage column and a constant reference column, or between two rows or two storage columns. A component is also provided in which specific selection structure is exclusively dedicated to read operations, and/or in which complementary cells in two complementary columns connected together are encoded in a single atomic operation by means of a single write current.

Abstract: A magnetic storage device includes a network of planar magnetic cells in a vortex state, each cell's vortex core having a magnetization with either a first and second equilibrium position in opposite direction and perpendicular to the cellular plane, each of the two positions representing binary information. The device includes conductive lines for writing binary information stored in the cells, including conductive lines for selectively applying, in the vicinity of each cell, a first bias static magnetic field roughly perpendicular to the cellular plane and a linearly polarized radio frequency magnetic field roughly parallel to the device. The described device also includes conductive lines for reading preferably resonantly the polarity using a selective transport measurement between two intersecting electrodes by guiding the current lines through the region around the vortex core by means of a point contact.

Abstract: A magnetic storage device includes a network of planar magnetic cells in a vortex state, each cell's vortex core having a magnetization with either a first and second equilibrium position in opposite direction and perpendicular to the cellular plane, each of the two positions representing binary information. The device includes means for writing binary information stored in the cells, including means for selectively applying, in the vicinity of each cell, a first bias static magnetic field roughly perpendicular to the cellular plane and a linearly polarized radio frequency magnetic field roughly parallel to the device. The described device also includes means for reading preferably resonantly the polarity using a selective transport measurement between two intersecting electrodes by guiding the current lines through the region around the vortex core by means of a point contact.

Abstract: The invention relates to an electric synapse that comprises a main conductor with a predetermined potential V1, a secondary conductor said secondary conductor having a potential VX1+ that can vary between Vref?Vn and Vref+Vn, Vref being the reference potential, a nanoconductor with an adjustable conductance W1, the main conductor being connected to said secondary conductor through an adjustable conductance nanoconductor, one end at least of the main conductor being connected to an electric neuron, said electric neuron being capable of realizing a threshold function and applying a training control potential Va of Vref?Vp or Vref+Vp to the main conductor when the voltage O1 obtained at the output of said threshold function is different from the expected voltage T1, wherein the Vn and Vp potentials comply with: 2*Vn<Vt and |Vp?Vn|<Vt<|Vp+Vn|.

Abstract: A microwave tuned oscillator utilizing a ferromagnetic thin film resonator comprises: a) a microwave resonator (1) comprising a ferromagnetic thin film resonance plate (110) such as a disc-shaped YIG crystal placed on a microwave integrated circuit (11), such as a half-wavelength strip-line resonator, b) bias magnetic field means (12) for applying a bias magnetic field perpendicular to the ferromagnetic thin film resonance plate (110), c) an active element for oscillation (21), a reactive feedback element (24) and a load (23, 25) controlled by the microwave properties of the ferromagnetic thin film resonance plate (110) through a load feedback loop (4), and d) an overall positive feedback loop (3, 14, 15) connected between the active element for oscillation (21) and the microwave resonator (1) to cause a sustained oscillation to build up at one of parametrically excited resonances of the ferromagnetic thin film resonance plate (110).

Abstract: A microwave tuned oscillator utilizing a ferromagnetic thin film resonator comprises: a) a microwave resonator (1) comprising a ferromagnetic thin film resonance plate (110) such as a disc-shaped YIG crystal placed on a microwave integrated circuit (11), such as a half-wavelength strip-line resonator, b) bias magnetic field means (12) for applying a bias magnetic field perpendicular to the ferromagnetic thin film resonance plate (110), c) an active element for oscillation (21), a reactive feedback element (24) and a load (23, 25) controlled by Ihe microwave properties of the ferromagnetic thin film resonance plate (110) through a load feedback loop (4), and d) an overall positive feedback loop (3, 14, 15) connected between the active element for oscillation (21) and the microwave resonator (1) to cause a sustained oscillation to build up at one of parametrically excited resonances of the ferromagnetic thin film resonance plate (110).