Abstract: A circuit of interface between a logic sensor and a logic input isolation barrier of a processing circuit, including an element of protection against input overvoltages, a current-limiting circuit connected in series between an input terminal and an output terminal of the interface circuit, and a control stage connected in parallel with the galvanic isolation element to be controlled to control the logic states thereof, the control stage inhibiting the operation of the galvanic isolation element if the input current is smaller than a predetermined threshold.

Abstract: A monolithic bidirectional switch formed in an N-type semiconductor substrate, including, in a first area, a first vertical thyristor adjacent to a second vertical thyristor; a triggering area arranged on the front surface side, apart from the first area, including a P-type well in which is formed an N-type region; a first metallization covering the rear surface; a second metallization on the front surface layers of the first and second thyristors; a third gate metallization on said well; on the rear surface side, an additional P-type region and an insulating layer interposed between this additional region and the first metallization, the additional region extending under the triggering area; and a fourth metallization on the region.

Abstract: The invention concerns a switching circuit (20) adapted to generate a pulse when there occurs a rising edge of a signal applied on an input terminal (CTRL), comprising: a first NPN type bipolar transistor (TN2) whereof the transmitter is connected to the input terminal; a second transistor (TP2) whereof a control electrode is connected, through a first resistor (Re2), to the input terminal, the base of the first transistor being connected to a supply potential (VDD) by the second transistor in series with a second resistor (Rp2); and a third transistor (TN3) connecting an output terminal (22) of the switching circuit to a reference potential (GND) and whereof a control electrode is connected to the collector of the first transistor (TN2).

Abstract: The invention concerns a switching circuit (20) adapted to generate a pulse when there occurs a rising edge of a signal applied on an input terminal (CTRL), comprising: a first NPN type bipolar transistor (TN2) whereof the transmitter is connected to the input terminal; a second transistor (TP2) whereof a control electrode is connected, through a first resistor (Re2), to the input terminal, the base of the first transistor being connected to a supply potential (VDD) by the second transistor in series with a second resistor (Rp2); and a third transistor (TN3) connecting an output terminal (22) of the switching circuit to a reference potential (GND) and whereof a control electrode is connected to the collector of the first transistor (TN2).

Abstract: A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical thyristor, the rear surface layer of which is of type N, an auxiliary vertical thyristor, the rear surface layer of which is of type P and is common with that of the first main thyristor, a peripheral region of type P especially connecting the rear surface layer of the auxiliary thyristor to the layer of this thyristor located on the other side of the substrate, a first metallization on the rear surface side, a second metallization on the front surface side connecting the front surface layers of the first and second thyristors. An additional region has a function of isolating the rear surface of the auxiliary thyristor and the first metallization.

Abstract: A monolithic bidirectional switch formed in an N-type semiconductor substrate, including, in a first area, a first vertical thyristor adjacent to a second vertical thyristor; a triggering area arranged on the front surface side, apart from the first area, including a P-type well in which is formed an N-type region; a first metallization covering the rear surface; a second metallization on the front surface layers of the first and second thyristors; a third gate metallization on said well; on the rear surface side, an additional P-type region and an insulating layer interposed between this additional region and the first metallization, the additional region extending under the triggering area; and a fourth metallization on the region.

Abstract: A monolithic component including two thyristors of a composite bridge connected to an A.C. voltage terminal by a common terminal corresponding to a common rear surface metallization forming an electrode of opposite biasing of each thyristor. An isolating wall separates a substrate in two portions, a first portion includes on its lower surface side an anode region and on its upper surface side a cathode region, the second portion includes on its lower surface side a cathode region and on its upper surface side an anode region. The isolating wall surrounding each of the components extending towards the main electrode on the side which carries no common metallization and including in this extended region an N-type area, the two areas being connected together to a common control terminal.

Abstract: A circuit of interface between a logic sensor and a logic input isolation barrier of a processing circuit, including an element of protection against input overvoltages, a current-limiting circuit connected in series between an input terminal and an output terminal of the interface circuit, and a control stage connected in parallel with the galvanic isolation element to be controlled to control the logic states thereof, the control stage inhibiting the operation of the galvanic isolation element if the input current is smaller than a predetermined threshold.

Abstract: A pulse-controlled analog flip-flop includes a charge element; a charge storage element connected to the charge element; an element for detecting the voltage across the storage element; and an element for discharging the storage element when the detection element has detected that the voltage across the storage element has reached a predetermined threshold.

Abstract: A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear surface layer of which is of the second conductivity type, a second main vertical thyristor, the rear surface layer of which is of the first conductivity type. A structure for triggering each of the first and second main thyristors is arranged to face regions mutually distant from the two main thyristors, the neighboring portions of which correspond to a region for which, for the first main thyristor, a short-circuit area between cathode and cathode gate is formed.

Abstract: A zero crossing control circuit of a bidirectional switch including two transistors of complementary types connected in parallel between the gate of the bidirectional switch and the main reference terminal of the bidirectional switch, the gate of the bidirectional switch being connected to a control source via a first resistor, and each of the control terminals of the transistors being connected to the second main terminal of the bidirectional switch via a second resistor of high value, a zener diode being interposed between the second resistor and each of the control terminals according to a biasing adapted to turning on each of the transistors when the zener threshold is exceeded.

Abstract: A monolithic component including two thyristors of a composite bridge connected to an A.C. voltage terminal by a common terminal corresponding to a common rear surface metallization forming an electrode of opposite biasing of each thyristor. An isolating wall separates a substrate in two portions, a first portion includes on its lower surface side an anode region and on its upper surface side a cathode region, the second portion includes on its lower surface side a cathode region and on its upper surface side an anode region. The isolating wall surrounding each of the components extending towards the main electrode on the side which carries no common metallization and including in this extended region an N-type area, the two areas being connected together to a common control terminal.

Abstract: A one-way switching circuit of the type including a gate tun-off thyristor biased to be normally on, further includes, between the gate and a supply line, a capacitor and a controllable switch connected in parallel.

Abstract: A pulse-controlled analog flip-flop including a charge element; a charge storage element connected to the charge element; an element for detecting the voltage across the storage element; and an element for discharging the storage element when the detection element has detected that the voltage across the storage element has reached a predetermined threshold.