Abstract: Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.

Abstract: Disclosed are methods of purifying a ruthenium containing precursor by removing oxygen from the ruthenium containing precursor by flowing an inert gas through the ruthenium containing precursor. Also disclosed are methods of forming an improved ruthenium containing film using the purified ruthenium containing precursor.

Abstract: Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.

Abstract: The present invention provides for two separate processes for removing impurities from an organic solvent based ruthenium precursor. The first process comprises the steps of contacting the organic solvent based ruthenium precursor with one or more drying agents under an inert gas blanket for a sufficient period of time to allow at least a portion of the impurities in the organic solvent based ruthenium precursor to be adsorbed by the one or more drying agents; and separating the one or more drying agents which have at least a portion of the impurities adsorbed thereon from the organic solvent based ruthenium precursor.

Abstract: Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.

Abstract: Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.

Abstract: A source liquid supply apparatus and method that avoids leaving source liquid-and/or cleaning fluid-derived residues in the vicinity of the connection region between the source liquid feed conduit and the source tank. A flow-switching mechanism is attached to the source tank of a source liquid supply apparatus. This flow-switching mechanism has a first port connected to the discharge port conduit of the source tank, a second port connected to a feed conduit, and a third port connected to an exhaust conduit. The first port can be closed by a valve member on a diaphragm disposed within a common compartment while communication is maintained between the second and third ports. A cleaning fluid source and a purge gas source are connected to the feed conduit. Purge gas and cleaning fluid fed into the feed conduit are discharged from the second and third ports and through the exhaust conduit.

Abstract: Methods and apparatus for the purification and distribution of acetylene. Acetylene is removed from an acetylene storage device, and provided to a purifier where solvent is removed. The purified acetylene is then provided to a semiconductor processing tool.

Abstract: (Problem) To provide a source liquid supply apparatus that avoids leaving source liquid- and/or cleaning fluid-derived residues in the vicinity of the joint or connection region between the source liquid feed conduit and the source tank. (Solution) A flow-switching mechanism Vc is attached to the source tank 22 of a source liquid supply apparatus 20. This flow-switching mechanism Vc has a first port 33 that is connected to the discharge port conduit 24 of the source tank 22, a second port 34 that is connected to a feed conduit 16, and a third port 35 that is connected to an exhaust conduit 25. The first port 33 can be closed by a valve member 43 on a diaphragm 42 disposed within a common compartment 38 while communication is maintained between the second and third ports 34 and 35. A cleaning fluid source 55 and a purge gas source 57 are connected to the feed conduit 16.

Abstract: Provided are an apparatus and method for the distribution of treatment liquids. The apparatus and method enable the continuous monitoring of the level of a treatment liquid by an inexpensive mechanism that has little capacity to contaminate the treatment liquid. The apparatus for the distribution of treatment liquids contains a gastight distribution tank that is connected through a discharge line to designated facilities, and also contains a gastight gas container that is connected through a pressurization line to the distribution tank. A pressure regulator is provided in the pressurization line and the pressurization gas is thereby supplied from the gas container to the distribution tank at a constant and specified supply pressure. This supply of pressurization gas induces the pressure-transport of the treatment liquid from the distribution tank through the discharge line.