Abstract: The present invention relates to a composition comprising one or a mixture of two or more quinoline-polyethylene glycol containing compound, each quinoline-polyethylene glycol containing compound comprising: one to three quinoline group and one or more polyethylene glycol group, wherein, in each said quinoline-polyethylene glycol containing compound, one to three of said one to three quinoline group is connected via one or more oxygen atom of said one or more polyethylene glycol group via carbon 6 or carbon 8 of said one to three quinoline group.

Abstract: The present invention concerns a metal or metal alloy deposition composition, particularly a copper or copper alloy deposition composition, for electrolytic deposition of a metal or metal alloy layer, particularly for electrolytic deposition of a copper or copper alloy layer, comprising at least one type of metal ions to be deposited, preferably copper ions, and at least one imidazole based plating compound. The present invention further concerns a method for preparation of the plating compound, the plating compound itself and its use in a metal or metal alloy deposition composition. The inventive metal or metal alloy deposition composition can be preferably used for filling recessed structures, in particular those having higher diameter to depth aspect ratios.

Abstract: The present invention relates to a composition comprising one or a mixture of two or more quinoline-polyethylene glycol containing compound, each quinoline-polyethylene glycol containing compound comprising: one to three quinoline group and one or more polyethylene glycol group, wherein, in each said quinoline-polyethylene glycol containing compound, one to three of said one to three quinoline group is connected via one or more oxygen atom of said one or more polyethylene glycol group via carbon 6 or carbon 8 of said one to three quinoline group.

Abstract: The present invention relates to imidazoyl urea polymers and their use in aqueous acidic plating baths for metal or metal alloy deposition such as electrolytic deposition of copper or alloys thereof in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of metal ions and an imidazoyl urea polymer. The plating bath is particularly useful for filling recessed structures and build-up of pillar bump structures.

Abstract: The present invention relates to an acidic aqueous composition (plating bath) for electrolytic copper plating (electrolytic deposition of copper), the composition comprising (i) copper (II) ions, (ii) one or more than one compound of Formula (Ia) (iii) one, two, three or more than three further compounds, which are different from the compound of Formula (Ia), with the definitions given below, the use of the acidic aqueous composition according to the invention for electrolytic copper plating, the use of the compound of Formula (Ia) in an acidic aqueous composition for electrolytic metal plating, a method of electrolytic copper plating using the acidic aqueous composition according to the invention, and specific compounds derived from Formula (Ia) for an acidic aqueous composition for electrolytic metal plating.

Abstract: The present invention concerns a metal or metal alloy deposition composition, particularly a copper or copper alloy deposition composition, for electrolytic deposition of a metal or metal alloy layer, particularly for electrolytic deposition of a copper or copper alloy layer, comprising at least one type of metal ions to be deposited, preferably copper ions, and at least one imidazole based plating compound. The present invention further concerns a method for preparation of the plating compound, the plating compound itself and its use in a metal or metal alloy deposition composition. The inventive metal or metal alloy deposition composition can be preferably used for filling recessed structures, in particular those having higher diameter to depth aspect ratios.

Abstract: The present invention relates to bisurea derivatives and their use in aqueous plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions and a bisurea derivative. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.

Abstract: The present invention relates to an acidic aqueous composition (plating bath) for electrolytic copper plating (electrolytic deposition of copper), the composition comprising (i) copper (II) ions, (ii) one or more than one compound of Formula (Ia) (iii) one, two, three or more than three further compounds, which are different from the compound of Formula (Ia), with the definitions given below, the use of the acidic aqueous composition according to the invention for electrolytic copper plating, the use of the compound of Formula (Ia) in an acidic aqueous composition for electrolytic metal plating, a method of electrolytic copper plating using the acidic aqueous composition according to the invention, and specific compounds derived from Formula (Ia) for an acidic aqueous composition for electrolytic metal plating.

Abstract: The present invention relates to imidazoyl urea polymers and their use in aqueous acidic plating baths for metal or metal alloy deposition such as electrolytic deposition of copper or alloys thereof in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of metal ions and an imidazoyl urea polymer. The plating bath is particularly useful for filling recessed structures and build-up of pillar bump structures.

Abstract: The present invention relates to bisurea derivatives and their use in aqueous plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises at least one source of copper ions and a bisurea derivative. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.

Abstract: The method for copper electroplating according to the present invention comprises an aqueous acidic copper plating bath containing a leveler additive which forms copper trenches having a cross-sectional round shape under direct current plating conditions, and at least one reverse current pulse cycle consisting of one forward current pulse and one reverse current pulse wherein the fraction of the reverse charge to the forward charge applied to the substrate in said at least one current pulse cycle ranges between 0.1 to 5%. The method is particularly suitable for simultaneously filling blind micro vias and plating trenches with a rectangular cross-sectional shape.

Abstract: The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer comprising amino residues on both termini and which is free of organically bound halogen. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.

Abstract: The method for copper electroplating according to the present invention comprises an aqueous acidic copper plating bath containing a leveler additive which forms copper trenches having a cross-sectional round shape under direct current plating conditions, and at least one reverse current pulse cycle consisting of one forward current pulse and one reverse current pulse wherein the fraction of the reverse charge to the forward charge applied to the substrate in said at least one current pulse cycle ranges between 0.1 to 5%. The method is particularly suitable for simultaneously filling blind micro vias and plating trenches with a rectangular cross-sectional shape.

Abstract: The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer comprising amino residues on both termini and which is free of organically bound halogen. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.

Abstract: An aircraft communication system includes primary and secondary networks. The system also includes an interconnection gateway with a filtered interface connected to only one of the primary and secondary networks, and an unfiltered interface connected to the other network. The filtered interface includes first incoming and outgoing buffers, a memory, and a selector. The unfiltered interface includes second incoming and outgoing buffers. The second incoming buffer sends all frames received from the other network to the first outgoing buffer for distribution through the only one network. The selector selects common data frames corresponding to virtual link identifiers in a stored list and copies only the selected common data frames from the first incoming buffer to the second outgoing buffer of the unfiltered interface for distribution through the other one of the networks.

Abstract: The present invention concerns an aircraft communication system (100) comprising a primary network (300) of AFDX type intended to connect a plurality of primary equipment items (310, 311, 320, 321, 330, 340, 360). This communication system comprises: a secondary network (500) dissimilar to said first network (300) whilst having the same protocol at frame level, said secondary network (500) being intended to connect a plurality of secondary equipment items (510, 520, 530, 540, 560), and an interconnection gateway (700; 700a; 700b; 700c) between said primary (300) and secondary (500) networks, intended to copy common data frames bit-by-bit originating from one of said primary and secondary networks (300, 500) for distribution thereof through the other of said primary and secondary networks (300, 500), to have this common data shared by the two networks (300, 500).