Abstract: A method for the geolocalization of a base station, referred to as the “sought base station”, of an access network of a wireless communication system. The wireless communication system also includes at least one terminal capable of transmitting messages bound for the access network. A message transmitted by a terminal can be received simultaneously by a plurality of base stations of the access network. The geographical position of the sought base station is determined as a function of the geographical position of at least one other base station of the access network, referred to as the “reference base station.” The geographical position of the reference base station is known. The reference base station having received a message transmitted by the terminal that has likewise been received by the sought base station.

Abstract: A device for massage and applying a cosmetic product includes a structure having a contact face and a handling face. On the contact face of the structure, a pair of notched rollers that are free to rotate about concurrent axes is provided. The device includes an elastic suspender for the notched rollers with respect to the structure. On the handling face of the structure, on the opposite side from the contact face, the device includes a gripping form in the form of a spherical cap enveloping the surface of the structure.

Abstract: The support (1) comprises a main body (3) which has a convex shape comprising facets which are planar and curved and free of edges, and it is provided with main contact surfaces (5) each of which is able to accept an electric cable, and with openings (6) surrounding each of the main contact surfaces (5).

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilized in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterized in that it consists of: forming at least one thin layer (1) on a nanostructured support with high specific surface (2), and treating the nanostructured support with high specific surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.

Abstract: Disclosed is a connecting arrangement for purposes of connecting an electrical line to a component section, with a holding device, which has a holding element for purposes of arranging on the component section and a connecting element for purposes of connecting the line with the holding element, with a breakthrough to be provided on the component section for purposes of guiding through the connecting element, wherein the holding element is embodied in the form of a clamp for purposes of encompassing the component section in at least some sections, and wherein a positioning device is provided for purposes of positioning the holding element in a design position on the component section, which has a holding element-side positioning element and a counter element to be provided on the component section, which interact in a form fit, and also a holding element for such a connecting arrangement with a clamp-type profile and a positioning element for purposes of a form-fit positioning of the holding element on the co

Abstract: The support (1) comprises a main body (3) which has a convex shape comprising facets which are planar and curved and free of edges, and it is provided with main contact surfaces (5) each of which is able to accept an electric cable, and with openings (6) surrounding each of the main contact surfaces (5).

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of: forming at least one thin layer (1) on a nanostructured support with specific upper surface (2), and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of: forming at least one thin layer (1) on a nanostructured support with specific upper surface (2), and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of: forming at least one thin layer (1) on a nanostructured support with specific upper surface (2), and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.