Abstract: A method is provided for preparing a sample of a specimen to be analysed from a thin-layer plate in thin-layer chromatography. The sample is removed from a surface of the thin-layer plate by means of a blade disposed at a receiving opening of a cannula and fed through the cannula to a specimen chamber connected to the cannula. A reduced pressure can be generated in the specimen chamber to suck the sample removed from the thin-layer plate by means of the cannula through the receiving opening into and through the cannula and into the specimen chamber. After removal and feed of the sample, the specimen chamber can be filled with a solvent to dissolve the sample.

Abstract: An apparatus for magnetic cell isolation includes a base, a stopcock manifold interface located on the base and configured to receive a stopcock manifold of a cell processing kit, a magnetic field generator located within the base, and a slot formed in the base, the slot configured to removably receive a magnetic cell isolation holder. The magnetic field generator is movable into and out of engagement with the magnetic cell isolation holder.

Abstract: A method is provided for preparing a sample of a specimen to be analysed from a thin-layer plate in thin-layer chromatography. The sample is removed from a surface of the thin-layer plate by means of a blade disposed at a receiving opening of a cannula and fed through the cannula to a specimen chamber connected to the cannula. A reduced pressure can be generated in the specimen chamber to suck the sample removed from the thin-layer plate by means of the cannula through the receiving opening into and through the cannula and into the specimen chamber. After removal and feed of the sample, the specimen chamber can be filled with a solvent to dissolve the sample.

Abstract: The support (1) comprises a main body (3) which has a convex shape comprising facets which are planar and curved and free of edges, and it is provided with main contact surfaces (5) each of which is able to accept an electric cable, and with openings (6) surrounding each of the main contact surfaces (5).

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilized in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterized in that it consists of: forming at least one thin layer (1) on a nanostructured support with high specific surface (2), and treating the nanostructured support with high specific surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.

Abstract: Disclosed is a connecting arrangement for purposes of connecting an electrical line to a component section, with a holding device, which has a holding element for purposes of arranging on the component section and a connecting element for purposes of connecting the line with the holding element, with a breakthrough to be provided on the component section for purposes of guiding through the connecting element, wherein the holding element is embodied in the form of a clamp for purposes of encompassing the component section in at least some sections, and wherein a positioning device is provided for purposes of positioning the holding element in a design position on the component section, which has a holding element-side positioning element and a counter element to be provided on the component section, which interact in a form fit, and also a holding element for such a connecting arrangement with a clamp-type profile and a positioning element for purposes of a form-fit positioning of the holding element on the co

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of: forming at least one thin layer (1) on a nanostructured support with specific upper surface (2), and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.

Abstract: The invention relates to a process for modifying the properties of a thin layer (1) formed on the surface of a support (2) forming a substrate (3) utilised in the field of microelectronics, nanoelectronics or microtechnology, nanotechnology, characterised in that it consists of: forming at least one thin layer (1) on a nanostructured support with specific upper surface (2), and treating the nanostructured support with specific upper surface (2) to generate internal strains in the support causing its deformation at least in the plane of the thin layer so as to ensure corresponding deformation of the thin layer to modify its properties.