Abstract: A radiation detector includes a stack of layers along a direction Z, the stack comprising: an absorbent layer, a first contact layer, an assembly consisting of at least one intermediate layer, referred to as an intermediate assembly, an upper layer, the first contact layer and the upper layer having a plurality of detection zones and separation zones, a detection zone corresponding to a pixel of the detector, a passivation layer made from a dielectric material, arranged on the upper layer and having openings at the level of the detection zones of the upper layer, the semiconductor layers of the stack being compounds based on elements of groups IIIA and VA of the periodic table of the elements, the second material comprising the VA element antimony and the third material not comprising the VA element antimony.

Abstract: A radiation detector includes a stack of layers along a direction Z, the stack comprising: an absorbent layer, a first contact layer, an assembly consisting of at least one intermediate layer, referred to as an intermediate assembly, an upper layer, the first contact layer and the upper layer having a plurality of detection zones and separation zones, a detection zone corresponding to a pixel of the detector, a passivation layer made from a dielectric material, arranged on the upper layer and having openings at the level of the detection zones of the upper layer, the semiconductor layers of the stack being compounds based on elements of groups IIIA and VA of the periodic table of the elements, the second material comprising the VA element antimony and the third material not comprising the VA element antimony.

Abstract: A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.

Abstract: A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.