Abstract: A transistor comprises a stack of semiconductor materials including, in particular, a first sub-layer, carefully arranged and with a specific thickness, splitting the buffer layer into two portions and including a third material so that the difference in the piezoelectric and spontaneous polarisation coefficients between the material of the buffer layer and the third material induces, at a first interface between the first portion of the buffer layer and the first sub-layer, a first fixed surface electric charge generating an electrical field directed along the axis z so as to follow the two-dimensional gas to be contained in the channel.

Abstract: A field-effect transistor comprising a stack of semiconductor materials, the upper face of the stack being covered with a passivation layer comprises two sub-layers: a first sub-layer extending over a second zone of low intensity comprising a first material with electric breakdown field Ecl1, the charge of the first sub-layer being strictly less than the charge of the upper face of the stack, a second sub-layer extending over a first zone of high intensity and covering the first sub-layer, the second sub-layer comprising a second material with electrical breakdown field Ecl2 strictly greater than Ecl1.