Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.

Abstract: An image sensor including a plurality of photosites formed inside and on top of a semiconductor substrate, each photosite including: a first photosensitive area formed in the semiconductor substrate and adapted to capturing light in a first wavelength range; a second photosensitive area formed in the semiconductor substrate vertically in line with the first photosensitive area and adapted to capturing light in a second wavelength range, different from the first wavelength range; a first area of collection of charges photogenerated in the first and second photosensitive areas, arranged on the side of a surface of the substrate opposite to the first photosensitive area; a first transfer gate vertically extending from the first photosensitive area to said surface, adapted to transferring the charges photogenerated in the first photosensitive area to the second photosensitive area; and a second transfer gate, horizontally extending on said surface vertically in line with the second photosensitive area, adapted to

Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.

Abstract: The present description concerns a photosite including: a photoconversion area configured to convert light into charges; at least one assembly of a first node and of a first charge flow path including a first switch configured to allow the flowing of charges from the photoconversion area to the first node of said assembly when said first switch is on and block the passage of charges between the photoconversion area and the first node of said assembly when said first switch is off; and a second charge flow path between said photoconversion area and a second node of the photosite, wherein the first and second paths are configured so that each first path holds the priority over the second path when the first switch of said first path is on.

Abstract: A SPAD-type photodiode comprising a depletion area in a first portion of a semiconductor substrate of a first conductivity type and further comprising a gate electrically-insulated from the substrate, extending into the substrate from an upper surface of the substrate, and separating the first portion of the substrate from a second portion. The photodiode further comprises a first region of the second conductivity type extending from the upper surface of the substrate into the second portion.

Abstract: An image sensor comprising a plurality of pixels formed inside and on top of a semiconductor substrate, each pixel comprising: a photosensitive area formed in the semiconductor substrate; a storage area formed in the semiconductor substrate; and a first transistor of transfer between the photosensitive area and the storage area, wherein the first transfer transistor comprises a gate vertically extending in the semiconductor substrate, from a top surface of the semiconductor substrate, inside of an insulating trench delimiting the storage area.

Abstract: An image sensor including a plurality of avalanche photodiodes formed inside and on top of a semiconductor substrate of a first conductivity type having a front side and a back side, wherein: trenches vertically extend in the substrate from its front side to its back side, the trenches having, in top view, the shape of a continuous grid laterally delimiting a plurality of substrate islands, each island defining a pixel including a single individually-controllable avalanche photodiode, and including a doped area of collection of an avalanche signal of the pixel photodiode the lateral walls of the trenches are coated with a first semiconductor layer having a conductivity type opposite to that of the collection area, and a conductive region extends in the trenches, the conductive region being in contact with the surface of the first semiconductor layer opposite to the substrate.

Abstract: A SPAD-type photodiode including, in an upper portion of a semiconductor substrate of a first conductivity type, an alternation of vertically stacked regions of the first conductivity type and regions of a second conductivity type, the regions of the first conductivity type being in contact with a same first semiconductor via of the first conductivity type and the regions of the second conductivity type being in contact with a same second semiconductor via of the second conductivity type.

Abstract: The invention concerns a pixel of an image array comprising one or more charge storage structures (200), each charge storage structure comprising: a first charge storage trench (202) doped to have a first conductivity type and having a first end (208) configured to receive charge accumulated by a photodiode; a second charge storage trench (204) doped to have the first conductivity type; and a first transfer gate (212) linking a second end (214) of the first charge storage trench (202) and the second charge storage trench (202, 204) to a sense node (216), wherein the first and second charge storage trenches are linked together by a linking channel (206) doped to have the first conductivity type and bordering a portion of an edge of the transfer gate (212).

Abstract: The invention concerns a pixel of an image array comprising one or more charge storage structures (200), each charge storage structure comprising: a first charge storage trench (202) doped to have a first conductivity type and having a first end (208) configured to receive charge accumulated by a photodiode; a second charge storage trench (204) doped to have the first conductivity type; and a first transfer gate (212) linking a second end (214) of the first charge storage trench (202) and the second charge storage trench (202, 204) to a sense node (216), wherein the first and second charge storage trenches are linked together by a linking channel (206) doped to have the first conductivity type and bordering a portion of an edge of the transfer gate (212).