Patents by Inventor Olle Gunnar Heinonen
Olle Gunnar Heinonen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7933137Abstract: Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization so that the device reaches one of the two stable overall magnetic configurations, whereinType: GrantFiled: March 31, 2009Date of Patent: April 26, 2011Assignee: Seagate Teachnology LLCInventors: Dimitar V. Dimitrov, Olle Gunnar Heinonen, Yiran Chen, Haiwen Xi, Xiaohua Lou
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Publication number: 20110019300Abstract: Data storage systems are provided. Data storage systems illustratively include a writing element and a recording medium. In some embodiments, the writing element generates first and second magnetization fields that respectively record first and second magnetization patterns to the recording medium. In some embodiments, the writing element is de-saturated between recording the first and second magnetization patterns.Type: ApplicationFiled: July 21, 2009Publication date: January 27, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Kaizhong Gao, Olle Gunnar Heinonen, Jianhua Xue, Wenzhong Zhu
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Patent number: 7876531Abstract: A magnetic writer includes a first write element and a second write element. The first write element produces a first field when a first current is passed through a first coil. The second write element, which is disposed relative to the first write element, produces a second field when a second current is passed through a second coil such that the second field at least partially opposes the first field.Type: GrantFiled: January 9, 2007Date of Patent: January 25, 2011Assignee: Seagate Technology LLCInventors: Steven Paul Bozeman, Olle Gunnar Heinonen, Sining Mao
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Publication number: 20110007422Abstract: A transducer includes magnetic material formed on a substrate that is shaped to include a trailing edge, a leading edge and a pair of opposing sidewalls extending between the trailing edge and the leading edge. A layer of protective material is positioned in contact with each of the pair of sidewalls of the shaped magnetic material. Backfill material surrounds the protective material on each of the pair of sidewalls of the shaped magnetic material.Type: ApplicationFiled: July 13, 2009Publication date: January 13, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Alexey V. Nazarov, Vladyslav Alexandrovich Vasko, Olle Gunnar Heinonen, Lijuan Zou, Thomas R. Boonstra, Xilin Peng, Kaizhong Gao
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Publication number: 20110007429Abstract: A tunneling magneto-resistive reader includes a sensor stack separating a top magnetic shield from a bottom magnetic shield. The sensor stack includes a reference magnetic element having a reference magnetization orientation direction and a free magnetic element having a free magnetization orientation direction substantially perpendicular to the reference magnetization orientation direction. A non-magnetic spacer layer separates the reference magnetic element from the free magnetic element. A first side magnetic shield and a second side magnetic shield is disposed between the top magnetic shield from a bottom magnetic shield, and the sensor stack is between the first side magnetic shield and the second side magnetic shield. The first side magnetic shield and the second side magnetic shield electrically insulates the top magnetic shield from a bottom magnetic shield.Type: ApplicationFiled: July 13, 2009Publication date: January 13, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Dimitar V. Dimitrov, Zheng Gao, Wonjoon Jung, Paul Edward Anderson, Olle Gunnar Heinonen
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Publication number: 20100232072Abstract: A magnetic sensor includes a freelayer, a reference layer and a front shield. The freelayer has a magnetization direction substantially perpendicular to the planar orientation of the layer and extends to the media confronting surface. The reference layer has a magnetization direction substantially in the plane of the layer and substantially perpendicular to the magnetization direction of the freelayer. The reference layer is recessed from the media confronting surface and a front shield is positioned between the reference layer and the media confronting surface thereby reducing the shield-to-shield spacing and increasing the areal density of the reader.Type: ApplicationFiled: March 16, 2009Publication date: September 16, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Dimitar Velikov Dimitrov, Zheng Gao, Wonjoon Jung, Sharat Batra, Olle Gunnar Heinonen
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Publication number: 20100135067Abstract: A method and apparatus for stray magnetic field compensation in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a first tunneling barrier is coupled to a reference structure that has a perpendicular anisotropy and a first magnetization direction. A recording structure that has a perpendicular anisotropy is coupled to the first tunneling barrier and a nonmagnetic spacer layer. A compensation layer that has a perpendicular anisotropy and a second magnetization direction in substantial opposition to the first magnetization direction is coupled to the nonmagnetic spacer layer. Further, the memory cell is programmable to a selected resistance state with application of a current to the recording structure.Type: ApplicationFiled: December 2, 2008Publication date: June 3, 2010Applicant: Seagate Technology LLCInventors: Dimitar V. Dimitrov, Olle Gunnar Heinonen, Dexin Wang, Haiwen Xi
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Publication number: 20100085803Abstract: Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.Type: ApplicationFiled: March 31, 2009Publication date: April 8, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Dimitar V. Dimitrov, Olle Gunnar Heinonen, Yiran Chen, Haiwen Xi, Xiaohua Lou
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Publication number: 20100085805Abstract: Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization so that the device reaches one of the two stable overall magnetic configurations, whereinType: ApplicationFiled: March 31, 2009Publication date: April 8, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Dimitar V. Dimitrov, Olle Gunnar Heinonen, Yiran Chen, Haiwen Xi, Xiaohua Lou
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Publication number: 20100084724Abstract: A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.Type: ApplicationFiled: April 6, 2009Publication date: April 8, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Dimitar V. Dimitrov, Ivan Petrov Ivanov, Shuiyuan Huang, Antoine Khoueir, Brian Lee, John Stricklin, Olle Gunnar Heinonen, Insik Jin
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Publication number: 20080165452Abstract: A magnetic writer includes a first write element and a second write element. The first write element produces a first field when a first current is passed through a first coil. The second write element, which is disposed relative to the first write element, produces a second field when a second current is passed through a second coil such that the second field at least partially opposes the first field.Type: ApplicationFiled: January 9, 2007Publication date: July 10, 2008Applicant: Seagate Technology LLCInventors: Steven Paul Bozeman, Olle Gunnar Heinonen, Sining Mao
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Patent number: 7035062Abstract: The present invention provides a tunneling magneto-resistive read sensor structure that improves sensitivity and linear density of the sensor structure. The sensor includes first and second electrodes and a stack positioned between the electrodes. The stack includes first and second free layers with magnetization orientations that are biased relative to each other. A tunneling barrier (insulating layer) or non-magnetic metal spacer is positioned between the first and second free layers. A sense current is passed between the first and second free layers of the stack. The amount of current passing through the first and second free layer changes based upon the orientation of the first and second free layers relative to each other.Type: GrantFiled: November 22, 2002Date of Patent: April 25, 2006Assignee: Seagate Technology LLCInventors: Sining Mao, Eric Shane Linville, Zheng Gao, Brian William Karr, Janusz Jozef Nowak, Olle Gunnar Heinonen
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Patent number: 6791805Abstract: A giant magnetoresistive (GMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode includes a ferromagnetic free layer, at least one synthetic antiferromagnet, at least one nonmagnetic spacer layer, and at least one antiferromagnetic pinning layer. The ferromagnetic free layer has a rotatable magnetic moment. The synthetic antiferromagnet includes a ferromagnetic reference layer having a fixed magnetic moment, a ferromagnetic pinned layer having a fixed magnetic moment, and a coupling layer positioned between the reference layer and the pinned layer, wherein the coupling layer is selected from the group consisting of Cu, Ag and CuAg. The nonmagnetic spacer layer is positioned between the free layer and the synthetic antiferromagnet. The antiferromagnetic pinning layer is positioned adjacent to the synthetic antiferromagnet.Type: GrantFiled: April 1, 2002Date of Patent: September 14, 2004Assignee: Seagate Technology LLCInventors: Olle Gunnar Heinonen, Michael Seigler, Eric W. Singleton
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Patent number: 6781801Abstract: A tunneling magnetoresistive (TMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode has a plurality of layers including a spin valve and a barrier layer. The spin valve is used to inject a spin polarized sense current into the barrier layer for increasing a magnetoresistive (MR) ratio of the TMR stack.Type: GrantFiled: January 22, 2002Date of Patent: August 24, 2004Assignee: Seagate Technology LLCInventors: Olle Gunnar Heinonen, Declan Macken
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Patent number: 6762915Abstract: A magnetoresistive stack for use in a magnetic read head has a plurality of layers including a ferromagnetic free layer, a ferromagnetic pinned layer, and an antiferromagnetic pinning layer. The pinned layer and pinning layer each have a greater number of structural grains than the free layer, which decreases a fluctuation of magnetization in the magnetoresistive stack without decreasing a spatial resolution of the magnetoresistive stack.Type: GrantFiled: January 25, 2002Date of Patent: July 13, 2004Assignee: Seagate Technology LLCInventors: Taras Grigoryevich Pokhil, Olle Gunnar Heinonen, Chunhong Hou
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Publication number: 20030214764Abstract: A magnetoresistive sensor having two free layers with shape anisotropy induced magnetic alignment is disclosed. The magnetoresistive sensor includes a first ferromagnetic free layer having a first quiescent state magnetization direction. The magnetoresistive sensor also includes a second elongated free layer having a second quiescent state magnetization direction and positioned such that the first quiescent state magnetization direction is generally orthogonal to the second quiescent state magnetization direction. Further, a portion of the second ferromagnetic free layer overlaps a portion of the first ferromagnetic free layer proximal to an air bearing surface to form a v-shape. A nonmagnetic spacer layer is also positioned between the first ferromagnetic free layer and the second ferromagnetic free layer.Type: ApplicationFiled: November 26, 2002Publication date: November 20, 2003Applicant: Seagate Technology LLCInventors: Victor Boris Sapozhnikov, Taras Grigoryevich Pokhil, Olle Gunnar Heinonen, Janusz Jozef Nowak
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Publication number: 20030030945Abstract: A tunneling magnetoresistive (TMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode has a plurality of layers including a spin valve and a barrier layer. The spin valve is used to inject a spin polarized sense current into the barrier layer for increasing a magnetoresistive (MR) ratio of the TMR stack.Type: ApplicationFiled: January 22, 2002Publication date: February 13, 2003Applicant: Seagate Technology LLCInventors: Olle Gunnar Heinonen, Declan Macken
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Publication number: 20020186513Abstract: A giant magnetoresistive (GMR) stack configured to operate in a current-perpendicular-to-plane (CPP) mode includes a ferromagnetic free layer, at least one synthetic antiferromagnet, at least one nonmagnetic spacer layer, and at least one antiferromagnetic pinning layer. The ferromagnetic free layer has a rotatable magnetic moment. The synthetic antiferromagnet includes a ferromagnetic reference layer having a fixed magnetic moment, a ferromagnetic pinned layer having a fixed magnetic moment, and a coupling layer positioned between the reference layer and the pinned layer, wherein the coupling layer is selected from the group consisting of Cu, Ag and CuAg. The nonmagnetic spacer layer is positioned between the free layer and the synthetic antiferromagnet. The antiferromagnetic pinning layer is positioned adjacent to the synthetic antiferromagnet.Type: ApplicationFiled: April 1, 2002Publication date: December 12, 2002Inventors: Olle Gunnar Heinonen, Michael Seigler, Eric W. Singleton
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Publication number: 20020171962Abstract: Herein is disclosed a method and apparatus for detecting a magnetic field stored upon magnetically-enclosable material with a semiconductor/metal read head. A region of the magnetically-encodable material is brought in proximity to a semiconductor mass with at least one conductive region embedded therein. An electrical current is directed through the semiconductor mass, flowing in a direction approximately parallel to the magnetically-encodable material. The semiconductor mass is magnetically biased. The biasing magnetic field is approximately perpendicular to the magnetically-encodable material. Finally, a change in resistance to current flowing through the semiconductor mass is detected. The change in resistance indicates magnitude and direction of the magnetic field stored upon the magnetically-encodable material.Type: ApplicationFiled: May 14, 2002Publication date: November 21, 2002Applicant: Seagate Technology LLCInventors: Olle Gunnar Heinonen, Nurul Amin