Patents by Inventor Olle Heinonen
Olle Heinonen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9111565Abstract: Embodiments of a single data storage device with multiple different data recording media surfaces are disclosed. In one embodiment, at least one of the data recording media surfaces is conventional, such as a continuous or discrete track recording media. Another of the data recording media surfaces is a relatively high areal density, high data rate recording media, such as a bit patterned media (BPM) recording media.Type: GrantFiled: January 16, 2009Date of Patent: August 18, 2015Assignee: Seagate Technology LLCInventors: Kaizhong Gao, Olle Heinonen, Wenzhong Zhu
-
Patent number: 8724252Abstract: In order to improve a consistent data track during writing to a storage medium, a plurality of read sensors are affixed to a transducer head. In one implementation, the transducer head includes multiple read sensors placed up-track of the write pole. In another implementation, the transducer head includes at least one read sensor placed up-track of the write pole and at least one read sensor placed down-track of the write pole. Each position of the multiple read sensors relative to the write pole may be unique. One or more read signals of selected read sensors are used to determine the read location and therefore the write pole location relative to the storage medium.Type: GrantFiled: July 31, 2013Date of Patent: May 13, 2014Assignee: Seagate Technology LLCInventors: Kaizhong Gao, Olle Heinonen, Yonghua Chen
-
Patent number: 8686388Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.Type: GrantFiled: July 12, 2012Date of Patent: April 1, 2014Assignee: Seagater Technology LLCInventors: Andreas Roelofs, Markus Siegert, Venugopalan Vaithyanathan, Wei Tian, Yongchul Ahn, Muralikrishnan Balakrishnan, Olle Heinonen
-
Patent number: 8681539Abstract: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.Type: GrantFiled: April 15, 2013Date of Patent: March 25, 2014Assignee: Seagate Technology LLCInventors: Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Haiwen Xi, Kaizhong Gao, Olle Heinonen, Wenzhong Zhu
-
Publication number: 20130314816Abstract: In order to improve a consistent data track during writing to a storage medium, a plurality of read sensors are affixed to a transducer head. In one implementation, the transducer head includes multiple read sensors placed up-track of the write pole. In another implementation, the transducer head includes at least one read sensor placed up-track of the write pole and at least one read sensor placed down-track of the write pole. Each position of the multiple read sensors relative to the write pole may be unique. One or more read signals of selected read sensors are used to determine the read location and therefore the write pole location relative to the storage medium.Type: ApplicationFiled: July 31, 2013Publication date: November 28, 2013Applicant: Seagate Technology LLCInventors: Kaizhong Gao, Olle Heinonen, Yonghua Chen
-
Publication number: 20130229862Abstract: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.Type: ApplicationFiled: April 15, 2013Publication date: September 5, 2013Applicant: SEGATE TECHNOLOGY LLCInventors: Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Haiwen Xi, Kaizhong Gao, Olle Heinonen, Wenzhong Zhu
-
Patent number: 8508005Abstract: A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.Type: GrantFiled: May 22, 2012Date of Patent: August 13, 2013Assignee: Seagate Technology LLCInventors: Kaizhong Gao, Haiwen Xi, Wenzhong Zhu, Olle Heinonen
-
Patent number: 8508880Abstract: In order to improve a consistent data track during writing to a storage medium, a plurality of read sensors are affixed to a transducer head. In one implementation, the transducer head includes multiple read sensors placed up-track of the write pole. In another implementation, the transducer head includes at least one read sensor placed up-track of the write pole and at least one read sensor placed down-track of the write pole. Each position of the multiple read sensors relative to the write pole may be unique. One or more read signals of selected read sensors are used to determine the read location and therefore the write pole location relative to the storage medium.Type: GrantFiled: February 16, 2011Date of Patent: August 13, 2013Assignee: Seagate Technology LLCInventors: Kaizhong Gao, Olle Heinonen, Yonghua Chen
-
Patent number: 8422279Abstract: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.Type: GrantFiled: October 21, 2011Date of Patent: April 16, 2013Assignee: Seagate Technology LLCInventors: Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Haiwen Xi, Kaizhong Gao, Olle Heinonen, Wenzhong Zhu
-
Publication number: 20120273744Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.Type: ApplicationFiled: July 12, 2012Publication date: November 1, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: Andreas Roelofs, Markus Siegert, Venugopalan Vaithyanathan, Wei Tian, Yongchul Ahn, Muralikrishnan Balakrishnan, Olle Heinonen
-
Publication number: 20120248558Abstract: A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.Type: ApplicationFiled: May 22, 2012Publication date: October 4, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: Kaizhong Gao, Haiwen Xi, Wenzhong Zhu, Olle Heinonen
-
Publication number: 20120206830Abstract: In order to improve a consistent data track during writing to a storage medium, a plurality of read sensors are affixed to a transducer head. In one implementation, the transducer head includes multiple read sensors placed up-track of the write pole. In another implementation, the transducer head includes at least one read sensor placed up-track of the write pole and at least one read sensor placed down-track of the write pole. Each position of the multiple read sensors relative to the write pole may be unique. One or more read signals of selected read sensors are used to determine the read location and therefore the write pole location relative to the storage medium.Type: ApplicationFiled: February 16, 2011Publication date: August 16, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: Kaizhong Gao, Olle Heinonen, Yonghua Chen
-
Patent number: 8227783Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.Type: GrantFiled: July 13, 2009Date of Patent: July 24, 2012Assignee: Seagate Technology LLCInventors: Andreas Roelofs, Markus Siegert, Venugopalan Vaithyanathan, Wei Tian, Yongchul Ahn, Muralikrishnan Balakrishnan, Olle Heinonen
-
Patent number: 8203192Abstract: Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer.Type: GrantFiled: April 14, 2011Date of Patent: June 19, 2012Assignee: Seagate Technology LLCInventors: Kaizhong Gao, Haiwen Xi, Wenzhong Zhu, Olle Heinonen
-
Publication number: 20120039115Abstract: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.Type: ApplicationFiled: October 21, 2011Publication date: February 16, 2012Applicant: SEAGATE TECHNOLOGY LLCInventors: Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Haiwen Xi, Kaizhong Gao, Olle Heinonen, Wenzhong Zhu
-
Patent number: 8053255Abstract: Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer.Type: GrantFiled: March 3, 2009Date of Patent: November 8, 2011Assignee: Seagate Technology LLCInventors: Kaizhong Gao, Haiwen Xi, Wenzhong Zhu, Olle Heinonen
-
Patent number: 8045366Abstract: Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.Type: GrantFiled: March 3, 2009Date of Patent: October 25, 2011Assignee: Seagate Technology LLCInventors: Yuankai Zheng, Dimitar V. Dimitrov, Dexin Wang, Haiwen Xi, Kaizhong Gao, Olle Heinonen, Wenzhong Zhu
-
Publication number: 20110194343Abstract: Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer.Type: ApplicationFiled: April 14, 2011Publication date: August 11, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Kaizhong Gao, Haiwen Xi, Wenzhong Zhu, Olle Heinonen
-
Publication number: 20110006275Abstract: A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.Type: ApplicationFiled: July 13, 2009Publication date: January 13, 2011Applicant: SEAGATE TECHNOLOGY LLCInventors: Andreas Roelofs, Markus Siegert, Venugopalan Vaithyanathan, Wei Tian, Yongchul Ahn, Muralikrishnan Balakrishnan, Olle Heinonen
-
Publication number: 20100226169Abstract: Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer.Type: ApplicationFiled: March 3, 2009Publication date: September 9, 2010Applicant: SEAGATE TECHNOLOGY LLCInventors: Kaizhong Gao, Haiwen Xi, Wenzhong Zhu, Olle Heinonen