Patents by Inventor Olubunmi O. Adetutu

Olubunmi O. Adetutu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming a high-K gate dielectric
    Patent number: 6184072
    Abstract: A method of processing a high K gate dielectric includes growing a high quality silicon dioxide layer at the silicon interface followed by deposition of a metal layer, which is then diffused into the silicon dioxide. Preferred metals include zirconium and hafnium. A gate stack may be fabricated by adding a metal containing layer to an existing thermally grown SiO2 or a combination of SiO2, SiO3 and SiO4 (oxide-nitride or oxynitride) stacks.
    Type: Grant
    Filed: May 17, 2000
    Date of Patent: February 6, 2001
    Assignee: Motorola, Inc.
    Inventors: Vidya S. Kaushik, Bich-Yen Nguyen, Olubunmi O. Adetutu, Christopher C. Hobbs