Patents by Inventor Omair I. Saadat

Omair I. Saadat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dielectric structures for nitride semiconductor devices
    Patent number: 10297456
    Abstract: A dielectric structure for a nitride semiconductor device and a method of forming the same. A semiconductor device includes at least one semiconductor layer. The at least one semiconductor layer includes a gallium nitride semiconductor material. The semiconductor device also includes an oxidized layer disposed over the at least one semiconductor layer. The oxidized layer includes an oxidized form of the gallium nitride semiconductor of the at least one semiconductor layer. A silicon oxide layer is disposed over the oxidized layer. A gate is disposed over the silicon oxide layer.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: May 21, 2019
    Assignee: Massachusetts Institute of Technology
    Inventors: Bernard A. Alamariu, Omair I. Saadat, Tomas Apostol Palacios
  • DIELECTRIC STRUCTURES FOR NITRIDE SEMICONDUCTOR DEVICES
    Publication number: 20170301546
    Abstract: A dielectric structure for a nitride semiconductor device and a method of forming the same. A semiconductor device includes at least one semiconductor layer. The at least one semiconductor layer includes a gallium nitride semiconductor material. The semiconductor device also includes an oxidized layer disposed over the at least one semiconductor layer. The oxidized layer includes an oxidized form of the gallium nitride semiconductor of the at least one semiconductor layer. A silicon oxide layer is disposed over the oxidized layer. A gate is disposed over the silicon oxide layer.
    Type: Application
    Filed: March 29, 2017
    Publication date: October 19, 2017
    Applicant: Massachusetts Institute of Technology
    Inventors: Bernard A. Alamariu, Omair I. Saadat, Tomas Apostol Palacios