Abstract: Reliable flow sensors with enclosures that have predictable thermal variations and reduced mechanical tolerances for a more consistent fluid flow and more consistent flow measurements. Thermal variations can be made predictable by using etched structures in silicon blocks. Mechanical tolerances can be reduced using lithography and high-precision semiconductor manufacturing equipment and techniques.

Abstract: Reliable flow sensors with enclosures that have predictable thermal variations and reduced mechanical tolerances for a more consistent fluid flow and more consistent flow measurements. Thermal variations can be made predictable by using etched structures in silicon blocks. Mechanical tolerances can be reduced using lithography and high-precision semiconductor manufacturing equipment and techniques.

Abstract: The invention is directed to hollow zeolite encapsulated metal particle catalysts where the metal particle is contained in the hollow of the zeolite, their preparation method by depositing metal particle precursors and subsequent removal of said metal particle precursors from the surface of the hollow zeolite while retaining those in the cavity of the hollow zeolite, and the catalysts' use in selective benzene alkylation.

Abstract: Pressure sensors and associated structures that may have reduced light sensitivity. An example may provide structures reducing light at a component on a membrane of a pressure sensor.

Abstract: Pressure sensors that may be used in flowrate monitoring or measuring systems, where the pressure sensors may enable simple, low-cost designs that are readily implemented. One example may provide a pressure sensor having a built-in flow path with a dimensional variation. Pressures of a fluid on each side of the dimensional variation may be compared to each other. The measured differential pressure may then be converted to a flowrate through the flow path.

Abstract: Pressure sensors and associated structures that may facilitate the use of automated connection processes and tools. An example may provide structures for aligning interconnect wires to pressure sensor bondpads in order to facilitate the use of automated processes and tools.

Abstract: Pressure sensors that may be used in flowrate monitoring or measuring systems, where the pressure sensors may enable simple, low-cost designs that are readily implemented. One example may provide a pressure sensor having a built-in flow path with a dimensional variation. Pressures of a fluid on each side of the dimensional variation may be compared to each other. The measured differential pressure may then be converted to a flowrate through the flow path.

Abstract: Nano-sized mixed metal oxide catalysts capable of producing methanol (CH3OH) from carbon dioxide (CO2) and hydrogen (H2) or from carbon dioxide (CO2), carbon monoxide (CO), and hydrogen (H2), methods of making the catalyst, and uses thereof are described herein. The nano-sized mixed metal oxide catalysts can have a formula of: [CuaZnbAlcMd1]On where a is 20 to 80, b is 15 to 60, c is 1 to 25, d is 0 to 15 and n is determined by the oxidation states of the other elements is determined by the oxidation states, and M1 can be yttrium (Y), cerium (Ce), tin (Sn), sodium (Na), bismuth (Bi), magnesium (Mg), or gadolinium (Gd).

Abstract: Pressure sensors and their methods of manufacturing, where the pressure sensors have a small, thin form factor and may include features designed to improve manufacturability and where the method of manufacturing may improve yield and reduce overall costs.

Abstract: Pressure sensors and associated structures that may have reduced light sensitivity. An example may provide structures reducing light at a component on a membrane of a pressure sensor.

Abstract: Pressure sensors and associated structures that may facilitate the use of automated connection processes and tools. An example may provide structures for aligning interconnect wires to pressure sensor bondpads in order to facilitate the use of automated processes and tools.

Abstract: Pressure sensors and their methods of manufacturing, where the pressure sensors have a small, thin form factor and may include features designed to improve manufacturability and where the method of manufacturing may improve yield and reduce overall costs.

Abstract: Structures and methods of protecting membranes on pressure sensors. One example may provide a pressure sensor having a backside cavity defining a frame and under a membrane formed in a device layer. The pressure sensor may further include a cap joined to the device layer by a bonding layer. A recess for a reference cavity may be formed in one or more of the cap, bonding layer, and membrane or other device layer portion. The recess may have a width that is narrower than a width of the backside cavity in at least one direction. In other examples, the recess may be shaped such that it has an outer edge that is within an outer edge of the backside cavity. This may reinforce a junction of the device layer and frame. The recess may define an active membrane spaced away from the device layer and backside cavity junction.

Abstract: Described herein is the sense element assembly for a capacitive pressure sensor and method for creating same that has increased sensitivity despite the parasitic capacitance that is created. The capacitive sensor element assembly, comprises a first semiconductive layer, and a first conductive layer, a first dielectric layer into which a cavity has been formed, the dielectric layer lying between the first semiconductive layer and the first conductive layer, wherein an electrical connection is made to the second conductive layer. A preferred method for fabricating a capacitive sensor assembly of the present invention comprises the steps of forming a dielectric layer on top of a conductive handle wafer; creating at least one cavity in the dielectric layer, bonding a thin semiconductive layer to the dielectric layer and connecting an operational amplifier to the input of the capacitive sensor assembly to overcome the parasitic capacitance formed during fabrication.

Abstract: Described herein is a method for integrating MEMS with submicron semiconductor electrical circuits such as CMOS to provide more complex signal processing, on-chip calibration and integration with RF technologies. A MEMS sensor is provided having an upper layer, an insulating layer into which a cavity has been formed and a handle layer. The upper layer acts as both the substrate of the semiconductor electrical circuit and as the active MEMS element. The remainder of the circuitry is fabricated either in or on the upper layer. In a preferred method of the present invention a first wafer assembly and a second wafer assembly are fabricated such that a MEMS sensor and the substrate of at least one semiconductive electrical circuit is formed.

Abstract: Described herein is a method for integrating MEMS with submicron semiconductor electrical circuits such as CMOS to provide more complex signal processing, on-chip calibration and integration with RF technologies. A MEMS sensor is provided having an upper layer, an insulating layer into which a cavity has been formed and a handle layer. The upper layer acts as both the substrate of the semiconductor electrical circuit and as the active MEMS element. The remainder of the circuitry is fabricated either in or on the upper layer. In a preferred method of the present invention a first wafer assembly and a second wafer assembly are fabricated such that a MEMS sensor and the substrate of at least one semiconductive electrical circuit is formed.

Abstract: Described herein is the sense element assembly for a capacitive pressure sensor and method for creating same that has increased sensitivity despite the parasitic capacitance that is created. The capacitive sensor element assembly, comprises a first semiconductive layer, and a first conductive layer, a first dielectric layer into which a cavity has been formed, the dielectric layer lying between the first semiconductive layer and the first conductive layer, wherein an electrical connection is made to the second conductive layer. A preferred method for fabricating a capacitive sensor assembly of the present invention comprises the steps of forming a dielectric layer on top of a conductive handle wafer; creating at least one cavity in the dielectric layer, bonding a thin semiconductive layer to the dielectric layer and connecting an operational amplifier to the input of the capacitive sensor assembly to overcome the parasitic capacitance formed during fabrication.