Patents by Inventor Omer Dokumaci
Omer Dokumaci has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080311732Abstract: A method for forming a semiconductor device includes defining a sacrificial layer (108) over a single crystalline substrate (106). The sacrificial layer (108) is implanted with a dopant species in a manner that prevents the single crystalline substrate (106) from becoming substantially amorphized. The sacrificial layer (108) is annealed so as to drive said dopant species from said sacrificial layer (108) into said single crystalline substrate (106).Type: ApplicationFiled: December 4, 2003Publication date: December 18, 2008Applicant: International Business Machines CorporationInventors: Omer Dokumaci, Paul Ronsheim
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Publication number: 20080070391Abstract: An apparatus and method for controlling the net doping in the active region of a semiconductor device in accordance with a gate length is provided. A compensating dopant is chosen to be a type of dopant which will electrically neutralize dopant of the opposite type in the substrate. By implanting the compensating dopant at relatively high angle and high energy, the compensating dopant will pass into and through the gate region for short channels and have little or no impact on the total dopant concentration within the gate region. Where the channel is of a longer length, the high implant angle and the high implant energy cause the compensating dopant to lodge within the channel thereby neutralizing a portion of the dopant of the opposite type.Type: ApplicationFiled: October 30, 2007Publication date: March 20, 2008Applicant: International business machines corporationInventors: Omer Dokumaci, Oleg Gluschenkev
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Publication number: 20080044974Abstract: The present invention provides a semiconducting device including a gate region positioned on a mesa portion of a substrate; and a nitride liner positioned on the gate region and recessed surfaces of the substrate adjacent to the gate region, the nitride liner providing a stress to a device channel underlying the gate region. The stress produced on the device channel is a longitudinal stress on the order of about 275 MPa to about 450 Mpa.Type: ApplicationFiled: October 22, 2007Publication date: February 21, 2008Inventors: Dureseti Chidambarrao, Omer Dokumaci
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Publication number: 20070296038Abstract: A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of the nFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel.Type: ApplicationFiled: August 31, 2007Publication date: December 27, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Huajie CHEN, Dureseti CHIDAMBARRAO, Omer DOKUMACI
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Publication number: 20070264783Abstract: A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of the nFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel.Type: ApplicationFiled: July 24, 2007Publication date: November 15, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Huajie CHEN, Dureseti CHIDAMBARRAO, Omer DOKUMACI
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Publication number: 20070231979Abstract: A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.Type: ApplicationFiled: June 4, 2007Publication date: October 4, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Dureseti CHIDAMBARRAO, Omer DOKUMACI, Oleg GLUSCHENKOV
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Publication number: 20070228472Abstract: A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material are mixed into the substrate by a thermal anneal process to form a first island and second island at an nFET region and a pFET region, respectively. A layer of different material is formed on the first island and the second island. The STI relaxes and facilitates the relaxation of the first island and the second island. The first material may be deposited or grown Ge material and the second material may deposited or grown Si:C or C. A strained Si layer is formed on at least one of the first island and the second island.Type: ApplicationFiled: June 4, 2007Publication date: October 4, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Dureseti Chidambarrao, Omer Dokumaci, Oleg Gluschenkov
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Publication number: 20070202639Abstract: The present invention provides a strained-Si structure, in which the nFET regions of the structure are strained in tension and the pFET regions of the structure are strained in compression. Broadly the strained-Si structure comprises a substrate; a first layered stack atop the substrate, the first layered stack comprising a compressive dielectric layer atop the substrate and a first semiconducting layer atop the compressive dielectric layer, wherein the compressive dielectric layer transfers tensile stresses to the first semiconducting layer; and a second layered stack atop the substrate, the second layered stack comprising an tensile dielectric layer atop the substrate and a second semiconducting layer atop the tensile dielectric layer, wherein the tensile dielectric layer transfers compressive stresses to the second semiconducting layer. The tensile dielectric layer and the compressive dielectric layer preferably comprise nitride, such as Si3N4.Type: ApplicationFiled: April 27, 2007Publication date: August 30, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Dureseti Chidambarrao, Omer Dokumaci, Bruce Doris, Oleg Gluschenkov, Huilong Zhu
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Publication number: 20070184621Abstract: The present invention relates to an FET device having a conductive gate electrode with angled sidewalls. Specifically, the sidewalls of the FET device are offset from the vertical direction by an offset angle that is greater than about 0° and not more than about 45°. In such a manner, such conductive gate electrode has a top surface area that is smaller than its base surface area. Preferably, the FET device further comprises source/drain metal contacts that are also characterized by angled sidewalls, except that the offset angle of the source/drain metal contacts are arranged so that the top surface area of each metal contact is larger than its base surface area. The FET device of the present invention has significantly reduced gate to drain metal contact overlap capacitance, e.g., less than about 0.07 femtoFarads per micron of channel width, in comparison with conventional FET devices having straight-wall gate electrodes and metal contacts.Type: ApplicationFiled: March 30, 2007Publication date: August 9, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Dureseti Chidambarrao, Lawrence Clevenger, Omer Dokumaci, Kaushik Kumar, Huilong Zhu
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Publication number: 20070166897Abstract: The present invention provides a strained-Si structure, in which the nFET regions of the structure are strained in tension and the pFET regions of the structure are strained in compression. Broadly the strained-Si structure comprises a substrate, a first layered stack atop the substrate, the first layered stack comprising a first Si-containing portion of the substrates a compressive layer atop the Si-containing portion of the substrate, and a semiconducting silicon layer atop the compressive layer; and a second layered stack atop the substrate, the second layered stack comprising a second-silicon containing layer portion of the substrate, a tensile layer atop the second Si-containing portion of the substrate, and a second semiconducting silicon-layer atop the tensile layer.Type: ApplicationFiled: March 30, 2007Publication date: July 19, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Dureseti Chidambarrao, Omer Dokumaci, Oleg Gluschenkov, Huilong Zhu
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Publication number: 20070138556Abstract: A double-gate transistor has front (upper) and back gates aligned laterally by a process of forming symmetric sidewalls in proximity to the front gate and then oxidizing the back gate electrode at a temperature of at least 1000 degrees for a time sufficient to relieve stress in the structure, the oxide penetrating from the side of the transistor body to thicken the back gate oxide on the outer edges, leaving an effective thickness of gate oxide at the center, aligned with the front gate electrode. Optionally, an angled implant from the sides of an oxide enhancing species encourages relatively thicker oxide in the outer implanted areas and an oxide-retarding implant across the transistor body retards oxidation in the vertical direction, thereby permitting increase of the lateral extent of the oxidation.Type: ApplicationFiled: February 16, 2007Publication date: June 21, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Omer Dokumaci, Bruce Doris, Kathryn Guarini, Suryanarayan Hegde, Meikei Ieong, Erin Jones
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Patent number: 7211490Abstract: Described is a method for making thin channel silicon-on-insulator structures. The inventive method comprises forming a set of thin spacer abutting a gate region in a first device and a second device region; forming a raised source/drain region on either side of the gate region in the first device region and the second device region, implanting dopants of a first conductivity type into the raised source drain region in the first device region to form a first dopant impurity region, where the second device region is protected by a second device region block mask; implanting dopants of a second conductivity type into the raised source/drain region in the second device region to form a second dopant impurity region, where the first device region is protected by a first device region block mask; and activating the first dopant impurity region and the second dopant impurity region to provide a thin channel MOSFET.Type: GrantFiled: March 18, 2005Date of Patent: May 1, 2007Assignee: International Business Machines CorporationInventors: Bruce B. Doris, Thomas S. Kanarsky, Ying Zhang, Huilong Zhu, Meikei Ieong, Omer Dokumaci
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Publication number: 20070087540Abstract: Methods and resulting structure of forming a transistor having a high mobility channel are disclosed. In one embodiment, the method includes providing a gate electrode including a gate material area and a gate dielectric, the gate electrode being positioned over a channel in a silicon substrate. A dielectric layer is formed about the gate electrode, and the gate material area and the gate dielectric are removed from the gate electrode to form an opening into a portion of the silicon substrate that exposes source/drain extensions. A high mobility semiconductor material, i.e., one having a carrier mobility greater than doped silicon, is then formed in the opening such that it laterally contacts the source/drain extensions. The gate dielectric and the gate material area may then be re-formed. This invention eliminates the high temperature steps after the formation of high mobility channel material used in related art methods.Type: ApplicationFiled: November 8, 2006Publication date: April 19, 2007Inventors: Omer Dokumaci, Woo-Hyeong Lee
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Publication number: 20070063277Abstract: The present invention provides a semiconductor structure having at least one CMOS device in which the Miller capacitances, i.e., overlap capacitances, are reduced and the drive current is improved. The inventive structure includes a semiconductor substrate having at least one overlaying gate conductor, each of the at least one overlaying gate conductors has vertical edges; a first gate oxide located beneath the at least one overlaying gate conductor, the first gate oxide not extending beyond the vertical edges of the at least overlaying gate conductor; and a second gate oxide located beneath at least a portion of the at one overlaying gate conductor. In accordance with the present invention, the first gate oxide and the second gate oxide are selected from high k oxide-containing materials and low k oxide-containing materials, with the proviso that when the first gate oxide is high k, than the second gate oxide is low k, or when the first gate oxide is low k, than the second gate oxide is high k.Type: ApplicationFiled: September 22, 2005Publication date: March 22, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Michael Belyansky, Dureseti Chidambarrao, Omer Dokumaci, Oleg Gluschenkov
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Publication number: 20070057334Abstract: The present invention relates to an FET device having a conductive gate electrode with angled sidewalls. Specifically, the sidewalls of the FET device are offset from the vertical direction by an offset angle that is greater than about 0° and not more than about 45°. In such a manner, such conductive gate electrode has a top surface area that is smaller than its base surface area. Preferably, the FET device further comprises source/drain metal contacts that are also characterized by angled sidewalls, except that the offset angle of the source/drain metal contacts are arranged so that the top surface area of each metal contact is larger than its base surface area. The FET device of the present invention has significantly reduced gate to drain metal contact overlap capacitance, e.g., less than about 0.07 femtoFarads per micron of channel width, in comparison with conventional FET devices having straight-wall gate electrodes and metal contacts.Type: ApplicationFiled: September 9, 2005Publication date: March 15, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Dureseti Chidambarrao, Lawrence Clevenger, Omer Dokumaci, Kaushik Kumar, Huilong Zhu
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Publication number: 20070035981Abstract: An apparatus for implementing dynamic control of a double gate semiconductor device includes a first switch configured to selectively couple a first gate input of the double gate device to a second gate input of the double gate device, and a second switch configured to selectively couple the second gate input of the double gate device to a selected voltage so as to adjust the threshold voltage of the double gate device.Type: ApplicationFiled: July 29, 2005Publication date: February 15, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Alper Buyuktosunoglu, Omer Dokumaci
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Patent number: 7170772Abstract: An apparatus for implementing dynamic control of a double gate semiconductor device includes a first switch configured to selectively couple a first gate input of the double gate device to a second gate input of the double gate device, and a second switch configured to selectively couple the second gate input of the double gate device to a selected voltage so as to adjust the threshold voltage of the double gate device.Type: GrantFiled: July 29, 2005Date of Patent: January 30, 2007Assignee: International Business Machines CorporationInventors: Alper Buyuktosunoglu, Omer Dokumaci
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Publication number: 20060255375Abstract: An apparatus and method for controlling the net doping in the active region of a semiconductor device in accordance with a gate length is provided. A compensating dopant is chosen to be a type of dopant which will electrically neutralize dopant of the opposite type in the substrate. By implanting the compensating dopant at relatively high angle and high energy, the compensating dopant will pass into and through the gate region for short channels and have little or no impact on the total dopant concentration within the gate region. Where the channel is of a longer length, the high implant angle and the high implant energy cause the compensating dopant to lodge within the channel thereby neutralizing a portion of the dopant of the opposite type.Type: ApplicationFiled: May 12, 2005Publication date: November 16, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Omer Dokumaci, Oleg Gluschenkov
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Publication number: 20060252216Abstract: Methods of boosting the performance of bipolar transistor, especially SiGe heterojunction bipolar transistors, is provided together with the structure that is formed by the inventive methods. The methods include providing a species-rich dopant region comprising C, a noble gas, or mixtures thereof into at least a collector. The species-rich dopant region forms a perimeter or donut-shaped dopant region around a center portion of the collector. A first conductivity type dopant is then implanted into the center portion of the collector to form a first conductivity type dopant region that is laterally constrained, i.e., confined, by the outer species-rich dopant region.Type: ApplicationFiled: May 9, 2005Publication date: November 9, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Omer Dokumaci, Gregory Freeman, Marwan Khater, Rajendran Krishnasamy, Kathryn Schonenberg
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Publication number: 20060237774Abstract: A method of producing a backgated FinFET having different dielectric layer thickness on the front and back gate sides includes steps of introducing impurities into at least one side of a fin of a FinFET to enable formation of dielectric layers with different thicknesses. The impurity, which may be introduced by implantation, either enhances or retards dielectric formation.Type: ApplicationFiled: June 28, 2006Publication date: October 26, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Andres BRYANT, Omer DOKUMACI, Hussein Hanafi, Edward NOWAK