Abstract: An analyte sensor apparatus for detecting an analyte in a target environment includes a plurality of electrodes and a controller. The plurality of electrodes may be configured to provide a plurality of electrode signals based on a target environment. The plurality of electrodes may include one or more working electrodes, a first reference electrode, and a second reference electrode. The one or more working electrodes may be configured to provide an analyte signal based on a presence of an analyte in the target environment. The first reference electrode may be configured to provide a first baseline signal of the target environment. The second reference electrode may include a different type of electrode than the first reference electrode. The second reference electrode may be configured to provide a second baseline signal of the target environment. The controller may be operatively coupled to the plurality of electrodes.

Abstract: An analyte sensor apparatus for detecting an analyte in a target environment includes a plurality of biotransducers and a controller. The plurality of biotransducers are configured to provide a baseline signal, one or more analyte signals, and at least one error condition signal. The plurality of biotransducers at least one reference biotransducer, one or more working biotransducers, and at least one working as reference biotransducer. The controller is operatively coupled to the plurality of biotransducers and is configured to receive the baseline signal, the one or more analyte signals, and the error correction signal. The controller is further configured to determine and/or output one or more adjusted analyte levels using the baseline signal, the one or more analyte signals, and the error correction signal.

Abstract: A thin film resistor is formed by employing a plasma etch on a resistor material layer. The resistor material layer can be fabricated employing a nickel chromium (NiCr) alloy, or nickel chromium aluminum (NiCrAl) alloy. A plasma etch is performed in a magnetically enhanced low pressure environment with a chlorine chemistry mixture. The magnetically enhanced low pressure environment and the sufficiently selective chlorine chemistry provide a substantially controlled plasma etch of the resistor material layer to form the thin film resistor. In-situ thickness measurements or an endpoint optical emission system can be employed to determine when to halt the etching process to mitigate damage associated with etching of the layer underlying the thin film resistor.