Patents by Inventor Omkar S. Dandekar

Omkar S. Dandekar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Photolithography mask synthesis for spacer patterning
    Patent number: 9268893
    Abstract: Photolithography mask synthesis is disclosed for spacer patterning masks. In one example, backbone features are extracted from a target layout of a mask design. A connectivity graph is generated based on the target layout in which lines of the backbone features are represented as nodes on the connectivity graph. The nodes are connected based on spacer patterning process limitations and the connections are assigned to sets. A backbone mask layout is then generated based on one of the sets of nodes.
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: February 23, 2016
    Assignee: Intel Corporation
    Inventors: Bikram Baidya, Omkar S. Dandekar, Vivek K. Singh
  • PHOTOLITHOGRAPHY MASK SYNTHESIS FOR SPACER PATTERNING
    Publication number: 20150095859
    Abstract: Photolithography mask synthesis is disclosed for spacer patterning masks. In one example, backbone features are extracted from a target layout of a mask design. A connectivity graph is generated based on the target layout in which lines of the backbone features are represented as nodes on the connectivity graph. The nodes are connected based on spacer patterning process limitations and the connections are assigned to sets. A backbone mask layout is then generated based on one of the sets of nodes.
    Type: Application
    Filed: December 29, 2011
    Publication date: April 2, 2015
    Inventors: Bikram Baidya, Omkar S. Dandekar, Vivek K. Singh
  • Photolithography mask design simplification
    Patent number: 8881071
    Abstract: A photolithography mask design is simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are pruned. The remaining lines are simplified and then thickened to form assist features.
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: November 4, 2014
    Assignee: Intel Corporation
    Inventors: Vivek K. Singh, Bikram Baidva, Omkar S. Dandekar, Hale Erten
  • PHOTOLITHOGRAPHY MASK DESIGN SIMPLIFICATION
    Publication number: 20140237434
    Abstract: A photolithography mask design in simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are pruned. The remaining lines are simplified and then thickened to form assist features.
    Type: Application
    Filed: December 29, 2011
    Publication date: August 21, 2014
    Inventors: Vivek K. Singh, Bikrsm Baidva, Omkar S. Dandekar, Hale Erten