Abstract: Solar cells are provided with carbon nanotubes (CNTs) which are used: to define a micron/sub-micron geometry of the solar cells; and/or as charge transporters for efficiently removing charge carriers from the absorber layer to reduce the rate of electron-hole recombination in the absorber layer. A solar cell may comprise: a substrate; a multiplicity of areas of metal catalyst on the surface of the substrate; a multiplicity of carbon nanotube bundles formed on the multiplicity of areas of metal catalyst, each bundle including carbon nanotubes aligned roughly perpendicular to the surface of the substrate; and a photoactive solar cell layer formed over the carbon nanotube bundles and exposed surfaces of the substrate, wherein the photoactive solar cell layer is continuous over the carbon nanotube bundles and the exposed surfaces of the substrate.

Abstract: The present invention generally relates to electrochromic (EC) devices, such as used in electrochromic windows (ECWs), and their manufacture. The EC devices may comprise a transparent substrate; a first transparent conductive layer; a doped coloration layer, wherein the coloration layer dopants provide structural stability to the arrangement of atoms in the coloration layer; an electrolyte layer; a doped anode layer over said electrolyte layer, wherein the anode layer dopant provides increased electrically conductivity in the doped anode layer; and a second transparent conductive layer. A method of fabricating an electrochromic device may comprise depositing on a substrate, in sequence, a first transparent conductive layer, a doped coloration layer, an electrolyte layer, a doped anode layer, and a second transparent conductive layer, wherein at least one of the doped coloration layer, the electrolyte layer and the doped anode layer is sputter deposited using a combinatorial plasma deposition process.

Abstract: The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

Abstract: Embodiments of the present invention generally relate to methods and apparatus for forming an energy storage device. More particularly, embodiments described herein relate to methods of forming electric batteries and electrochemical capacitors. In one embodiment a method of forming a high surface area electrode for use in an energy storage device is provided. The method comprises forming an amorphous silicon layer on a current collector having a conductive surface, immersing the amorphous silicon layer in an electrolytic solution to form a series of interconnected pores in the amorphous silicon layer, and forming carbon nanotubes within the series of interconnected pores of the amorphous silicon layer.

Abstract: Methods for providing a silicon layer on a photomask substrate surface with minimum defeats for fabricating film stack thereon for EUVL applications are provided. In one embodiment, a method for forming a silicon layer on a photomask substrate includes performing an oxidation process to form a silicon oxide layer on a surface of a first substrate wherein the first substrate comprises a crystalline silicon material, performing an ion implantation process to define a cleavage plane in the first substrate, and bonding the silicon oxide layer to a surface of a second substrate, wherein the second substrate is a quartz photomask.

Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

Abstract: Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.

Abstract: Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

Abstract: Methods of and factories for thin-film battery manufacturing are described. A method includes operations for fabricating a thin-film battery. A factory includes one or more tool sets for fabricating a thin-film battery.

Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

Abstract: Embodiments of the present invention generally relate to methods and apparatus for forming an energy storage device. More particularly, embodiments described herein relate to methods of forming electric batteries and electrochemical capacitors. In one embodiment a method of forming a high surface area electrode for use in an energy storage device is provided. The method comprises forming an amorphous silicon layer on a current collector having a conductive surface, immersing the amorphous silicon layer in an electrolytic solution to form a series of interconnected pores in the amorphous silicon layer, and forming carbon nanotubes within the series of interconnected pores of the amorphous silicon layer.

Abstract: Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer.

Abstract: Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.

Abstract: Methods of and factories for thin-film battery manufacturing are described. A method includes operations for fabricating a thin-film battery. A factory includes one or more tool sets for fabricating a thin-film battery.

Abstract: Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2 as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.

Abstract: Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract: The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.