Patents by Inventor Omur Isil Aydin

Omur Isil Aydin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial semiconductor material grown with enhanced local isotropy
    Patent number: 10763328
    Abstract: Structures for a field-effect transistor and methods for fabricating a structure for a field-effect transistor. A first epitaxial layer has a first surface and a second surface inclined relative to the first surface. A surface layer is arranged on the first and second surfaces of the first epitaxial layer. A second epitaxial layer is arranged over the surface layer on the first and second surfaces of the first epitaxial layer. A portion of the first epitaxial layer defines an interface with the surface layer. The portion of the first epitaxial layer contains a first concentration of a dopant. The surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: September 1, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Omur Isil Aydin, Judson Holt, Lakshmanan Vanamurthy, Tobias Heyne, Pei-Yu Chou, Cäcilia Brantz
  • EPITAXIAL SEMICONDUCTOR MATERIAL GROWN WITH ENHANCED LOCAL ISOTROPY
    Publication number: 20200111870
    Abstract: Structures for a field-effect transistor and methods for fabricating a structure for a field-effect transistor. A first epitaxial layer has a first surface and a second surface inclined relative to the first surface. A surface layer is arranged on the first and second surfaces of the first epitaxial layer. A second epitaxial layer is arranged over the surface layer on the first and second surfaces of the first epitaxial layer. A portion of the first epitaxial layer defines an interface with the surface layer. The portion of the first epitaxial layer contains a first concentration of a dopant. The surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer.
    Type: Application
    Filed: October 4, 2018
    Publication date: April 9, 2020
    Inventors: Omur Isil Aydin, Judson Holt, Lakshmanan Vanamurthy, Tobias Heyne, Pei-Yu Chou, Cäcilia Brantz