Patents by Inventor On Chang

On Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190316254
    Abstract: The present disclosure relates to a substrate treatment apparatus and a substrate treatment method, and more particularly, to a substrate treatment apparatus and a substrate treatment method configured to deposit a uniform thin film on a substrate. A substrate treatment apparatus, in accordance with an exemplary embodiment, includes a reaction tube having an internal space formed therein, a substrate boat configured to load a plurality of substrates in multi-stages, and positioned in the internal space to partition a plurality of treatment spaces in which the plurality of substrates are respectively treated, a process gas supply part configured to supply a process gas to the plurality of treatment spaces, and a dilution gas supply part configured to supply a dilution gas for diluting the process gas within the plurality of treatment spaces.
    Type: Application
    Filed: March 4, 2019
    Publication date: October 17, 2019
    Inventors: Sung Ho KANG, Chang Dol KIM, Seong Min HAN, Seok Yun KIM, Sung Ha CHOI
  • Publication number: 20190319128
    Abstract: In some embodiments, a field effect transistor (FET) structure comprises a body structure, dielectric structures, a gate structure and a source or drain region. The gate structure is formed over the body structure. The source or drain region is embedded in the body structure beside the gate structure, and abuts and is extended beyond the dielectric structure. The source or drain region contains stressor material with a lattice constant different from that of the body structure. The source or drain region comprises a first region formed above a first level at a top of the dielectric structures and a second region that comprises downward tapered side walls formed under the first level and abutting the corresponding dielectric structures.
    Type: Application
    Filed: June 25, 2019
    Publication date: October 17, 2019
    Inventors: CHE-CHENG CHANG, TUNG-WEN CHENG, ZHE-HAO ZHANG, YUNG JUNG CHANG
  • Publication number: 20190316075
    Abstract: This invention concerns an integrated microfluidic system that utilizes microfluidic chip technology to receive a patient sample including cells, expand the cells, reprogram the expanded cells and then store the reprogrammed cells in a microfluidic chip. These microfluidic chips with stored reprogrammed cells may then be used in scenarios of genetic differentiation into specific cell types. Overall this system and workflow is suitable as a hospital based device that will allow the generation of iPSCs from every isolating patient for downstream diagnostic or therapeutic use.
    Type: Application
    Filed: November 17, 2017
    Publication date: October 17, 2019
    Inventors: Scott Noggle, Stephen Chang
  • Publication number: 20190314785
    Abstract: Provided is a resin bead comprising functional groups of structure (S1).
    Type: Application
    Filed: December 30, 2016
    Publication date: October 17, 2019
    Inventors: Chang-Soo LEE, Collin H. MARTIN, Daryl J. GISCH, Christopher R. EICHER
  • Publication number: 20190317404
    Abstract: A photopolymer composition comprising a polymer matrix or a precursor thereof including a reaction product between (i) a (meth)acrylate-based (co)polymer in which a silane-based functional group is located in a branched chain and an equivalent weight of the silane-based functional group is 300 g/eq to 2000 g/eq, and (ii) a linear silane crosslinking agent; a photoreactive monomer; and a photoinitiator, a hologram recording medium using the same, an optical element using the hologram recording medium, and a holographic recording method. The photopolymer composition can more easily provide a photopolymer layer having improved durability against temperature and humidity while having a large refractive index modulation value.
    Type: Application
    Filed: September 11, 2018
    Publication date: October 17, 2019
    Applicant: LG CHEM, LTD.
    Inventors: Seok Hoon JANG, Heon KIM, Yongjoon HEO, Se Hyun KWON, Yeong Rae CHANG
  • Publication number: 20190319034
    Abstract: A memory device and a method for manufacturing the memory device are provided. The memory device includes a substrate, a plurality of first gate structures, a first dielectric layer, a second dielectric layer, a third dielectric layer and a contact plug. The first gate structures are formed on an array region of the substrate. The first dielectric layer is formed on top surfaces and sidewalls of the first gate structures. The second dielectric layer is formed on the first dielectric layer and in direct contact with the first dielectric layer. The second dielectric layer and the first dielectric layer are made of the same material. The third dielectric layer is formed between the first gate structures and defines a plurality of contact holes exposing the substrate. The contact plug fills the contact holes.
    Type: Application
    Filed: April 12, 2019
    Publication date: October 17, 2019
    Inventors: Shu-Ming LEE, Tzu-Ming OU YANG, Meng-Chang CHAN
  • Publication number: 20190319120
    Abstract: In some embodiments, a field effect transistor structure includes a first semiconductor structure and a gate structure. The first semiconductor structure includes a channel region, and a source region and a drain region. The source region and the drain region are formed on opposite ends of the channel region, respectively. The gate structure includes a central region and footing regions. The central region is formed over the first semiconductor structure. The footing regions are formed on opposite sides of the central region and along where the central region is adjacent to the first semiconductor structure.
    Type: Application
    Filed: June 4, 2019
    Publication date: October 17, 2019
    Inventors: CHE-CHENG CHANG, CHANG-YIN CHEN, JR-JUNG LIN, CHIH-HAN LIN, YUNG JUNG CHANG
  • Publication number: 20190319111
    Abstract: One example provides an enhancement-mode High Electron Mobility Transistor (HEMT) includes a substrate, a Group IIIA-N active layer over the substrate, a Group IIIA-N barrier layer over the active layer, and at least one isolation region through the barrier layer to provide an isolated active area having the barrier layer on the active layer. A gate stack is located between source and drain contacts to the active layer. A tunnel diode in the gate stack includes an n-GaN layer on an InGaN layer on a p-GaN layer located on the barrier layer.
    Type: Application
    Filed: June 28, 2019
    Publication date: October 17, 2019
    Inventors: CHANG SOO SUH, DONG SEUP LEE, JUNGWOO JOH, NAVEEN TIPIRNENI, SAMEER PRAKASH PENDHARKAR
  • Publication number: 20190314425
    Abstract: The present disclosure relates to an Akkermansia muciniphila strain having a prophylactic or therapeutic effect on a degenerative brain disease and uses thereof. Since the Akkermansia muciniphila strain, the intestinal microorganism of the present disclosure, shows an effect of improving movement control and cognitive abilities as well as memory in an animal model having a degenerative brain disease such as Parkinson's disease and Alzheimer's disease, it can be useful in the prevention or treatment of brain diseases including Alzheimer's disease, Parkinson's disease, mild cognitive impairment, etc. In addition, it was confirmed in the present disclosure that compared to the Akkermansia muciniphila strain cultured in a mucin-containing medium, that cultured in a mucin-free medium showed a remarkable effect of improving hyperlipidemia, fatty liver, obesity, and hyperglycemia induced in a mouse model by high-fat diet when administered orally (in vivo).
    Type: Application
    Filed: July 11, 2017
    Publication date: October 17, 2019
    Inventors: Byoung-Chan KIM, Chul-Ho LEE, Jung-Ran NOH, Kyoung-Shim KIM, Myung-Hee KIM, Yong-Hoon KIM, Sang Jun LEE, Dong-Ho CHANG, Dong-Hee CHOI, Jung Hwan HWANG, Yun-Jung SEO, In-Bok LEE, Young-Keun CHOI, Jung-Hyeon CHOI
  • Publication number: 20190319140
    Abstract: A solar cell can include a silicon substrate; a tunnel layer disposed on a first surface of the silicon substrate, the tunnel layer including a dielectric material; a polycrystalline silicon layer disposed on the tunnel layer; a dielectric layer disposed on the polycrystalline silicon layer; and an electrode penetrating through the dielectric layer and directly contacting with the polycrystalline silicon layer, wherein the polycrystalline silicon layer includes a metal crystal region positioned at a region where the polycrystalline silicon layer contacts the electrode, and wherein the metal crystal region includes a plurality of metal crystals, the plurality of metal crystals including a metal material same as a metal material included in the electrode.
    Type: Application
    Filed: June 28, 2019
    Publication date: October 17, 2019
    Applicant: LG ELECTRONICS INC.
    Inventors: Jungmin HA, Sungjin KIM, Juhwa CHEONG, Junyong AHN, Hyungwook CHOI, Wonjae CHANG, Jaesung KIM
  • Publication number: 20190315835
    Abstract: The present invention relates to compositions comprising factor VIII coagulation factors linked to extended recombinant polypeptide (XTEN), isolated nucleic acids encoding the compositions and vectors and host cells containing the same, and methods of making and using such compositions in treatment of factor VIII-related diseases, disorders, and conditions.
    Type: Application
    Filed: March 29, 2019
    Publication date: October 17, 2019
    Inventors: Volker SCHELLENBERGER, Pei-Yun CHANG, Fatbardha VARFAJ, John KULMAN, Tongyao LIU, Garabet G. TOBY, Haiyan JIANG, Robert PETERS, Deping WANG, Baisong MEI, Joshua SILVERMAN, Chia-Wei WANG, Benjamin SPINK, Nathan GEETHING
  • Publication number: 20190318933
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.
    Type: Application
    Filed: May 22, 2018
    Publication date: October 17, 2019
    Inventors: Tzu-Hao Liu, Yi-Wei Chen, Tsun-Min Cheng, Kai-Jiun Chang, Chia-Chen Wu, Yi-An Huang, Po-Chih Wu, Pin-Hong Chen, Chun-Chieh Chiu, Tzu-Chieh Chen, Chih-Chien Liu, Chih-Chieh Tsai, Ji-Min Lin
  • Publication number: 20190318967
    Abstract: Generally, the present disclosure provides example embodiments relating to tuning threshold voltages in transistor devices and the transistor devices formed thereby. Various examples implementing various mechanisms for tuning threshold voltages are described. In an example method, a gate dielectric layer is deposited over an active area in a device region of a substrate. A dipole layer is deposited over the gate dielectric layer in the device region. A dipole dopant species is diffused from the dipole layer into the gate dielectric layer in the device region.
    Type: Application
    Filed: April 13, 2018
    Publication date: October 17, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Zoe Chen, Ching-Hwanq Su, Cheng-Lung Hung, Cheng-Yen Tsai, Da-Yuan Lee, Hsin-Yi Lee, Weng Chang, Wei-Chin Lee
  • Publication number: 20190315078
    Abstract: A method for making a molded composite of a prepreg sheet and a molding material includes steps of: a) providing a mold assembly, b) disposing the molding material, c) placing the prepreg sheet, d) combining a female mold and a male mold of the mold assembly, and e) operating an actuating member to press the molding material against the prepreg sheet.
    Type: Application
    Filed: September 14, 2018
    Publication date: October 17, 2019
    Inventors: Chang-Hung TSAI, Chia-Hsing WU
  • Publication number: 20190319083
    Abstract: An organic light emitting diode display device includes: a substrate; a scan line configured to transfer a scan signal; a data line and a driving voltage line configured to transfer a data voltage and a driving voltage, respectively; a switching transistor including a switching drain electrode configured to output the data voltage; a driving transistor including a driving gate electrode connected with the switching drain electrode; a storage capacitor including a first storage electrode connected with the driving gate electrode and a second storage electrode connected with the driving voltage line; and an organic light emitting diode connected with a driving drain electrode of the driving transistor. The storage capacitor includes: a connector in which an edge of the second storage electrode is offset from an edge of the first storage electrode in a direction toward the center of the second storage electrode, and a storage compensator facing the connector.
    Type: Application
    Filed: June 26, 2019
    Publication date: October 17, 2019
    Inventor: Chang Soo Pyon
  • Publication number: 20190317530
    Abstract: A method for controlling flight of an unmanned aerial vehicle (UAV) includes obtaining information about a location of an object of interest, and calculating, during operation of the UAV, a flight-restricted distance for the UAV to maintain relative to the object of interest. The flight-restricted distance is calculated based on a safety factor and the safety factor is determined based on an object classification. The method further includes controlling flight of the UAV to maintain the flight-restricted distance relative to the object of interest.
    Type: Application
    Filed: May 31, 2019
    Publication date: October 17, 2019
    Inventors: Bingzhen YANG, Guofang ZHANG, Tao WANG, Chang GENG
  • Publication number: 20190316855
    Abstract: A thermal abnormality detection system includes: a first heat dissipation system having a first temperature sensor for measuring an actual temperature of the first heat dissipation system; a second heat dissipation system having a second temperature sensor for measuring an actual temperature of the second heat dissipation system. Assuming that a difference between the actual temperature of the first heat dissipation system and an upper limit temperature of the first heat dissipation system is d1, and a difference between the actual temperature of the second heat dissipation system and an upper limit temperature of the second heat dissipation system is d2, when a value of d1?d2 is greater than an error threshold value Error1_level, the first heat dissipation system is determined to be abnormal, and when the value of d1?d2 is less than an error threshold value Error2_level, the second heat dissipation system is determined to be abnormal.
    Type: Application
    Filed: November 9, 2018
    Publication date: October 17, 2019
    Inventors: Lei-Chung HSING, Hsien-Chih OU, Chun-Chang HUANG
  • Publication number: 20190315673
    Abstract: The present invention discloses 5-bromo-2-(?-hydroxypentyl)benzoic acid sodium salt in different crystal forms and the preparation methods thereof, and belongs to the field of pharmaceutical chemistry. Said different crystal forms of 5-bromo-2-(?-hydroxypentyl)benzoic acid sodium salt include: amorphous 5-bromo-2-(?-hydroxypentyl)benzoic acid sodium salt, crystal form A of 5-bromo-2-(?-hydroxypentyl)benzoic acid sodium salt, and crystal form B of 5-bromo-2-(?-hydroxypentyl)benzoic acid sodium salt. The different crystal forms of 5-bromo-2-(?-hydroxypentyl)benzoic acid sodium salt obtained according to the present invention have better stability and water-solubility than the mixed forms of 5-bromo-2-(?-hydroxypentyl)benzoic acid sodium salt, thus is advantageous for pharmaceutical use. Moreover, the different crystal forms of 5-bromo-2-(?-hydroxypentyl)benzoic acid sodium salt possess much better therapeutic effect than 5-bromo-2-(?-hydroxypentyl)benzoic acid potassium salt.
    Type: Application
    Filed: June 26, 2019
    Publication date: October 17, 2019
    Applicant: Zhejiang Ausun Pharmaceutical Co., Ltd.
    Inventors: Junbiao Chang, Chuanjun Song
  • Publication number: 20190315996
    Abstract: Provided is a hydrophilic coating composition, and more particularly, a hydrophilic coating composition including both a block copolymer and a random copolymer, each including repeating units of particular structures, wherein the hydrophilic coating composition may impart a hydrophilic property to the surface of a substrate when applied to the surface, while having excellent adhesiveness to the substrate.
    Type: Application
    Filed: December 26, 2017
    Publication date: October 17, 2019
    Applicant: LG CHEM, LTD.
    Inventors: Chang Hwan JU, Hee Jung CHOI, Jeongae YOON, Yeong Rae CHANG, Sung Soo YOON
  • Patent number: 10447917
    Abstract: A portable device adapted to enable its user to manually adjust the focus and photometry locations during photography and a method for taking images with the device is disclosed. A GUI for indicating the focus or photometry location is provided on the screen so that the user can manually move the GUI on the screen with a keypad or a touch panel. In this manner, a desired object is taken at the focus or photometry location.
    Type: Grant
    Filed: October 18, 2016
    Date of Patent: October 15, 2019
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Jong Pil Shin, Do Hwan Choi, Jong Hyun An, Chang Woo Park, Ha Ran Jung