Patents by Inventor On Yu BAE

On Yu BAE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240196598
    Abstract: A semiconductor device is provided. The semiconductor device includes a substrate containing deuterium at a first concentration, an active pattern disposed on the substrate and extending in a first horizontal direction, a gate electrode disposed on the active pattern and extending in a second horizontal direction different from the first horizontal direction, a gate insulating layer disposed between the active pattern and the gate electrode, the gate insulating layer containing deuterium at a second concentration, a first interlayer insulating layer disposed on the gate electrode, a second interlayer insulating layer disposed on the first interlayer insulating layer, and a wiring pattern disposed inside the second interlayer insulating layer, the wiring pattern containing deuterium at a third concentration lower than the first concentration, wherein each of the first to third concentrations is a concentration of deuterium atoms contained in the same unit volume.
    Type: Application
    Filed: December 4, 2023
    Publication date: June 13, 2024
    Inventors: Jun Kwan KIM, Dong Woo KIM, Mun Jun KIM, On Yu BAE, Yong Jin SHIN, Kyoung Min WOO
  • Publication number: 20240178138
    Abstract: A semiconductor device includes a substrate having a cell region and a peripheral region surrounding the cell region, a lower electrode extending in a vertical direction on the cell region of the substrate, an upper electrode surrounding a sidewall and a top surface of the lower electrode, a capacitor dielectric layer disposed between the lower electrode and the upper electrode, a first barrier layer disposed on the upper electrode, the first barrier layer in contact with each of a sidewall and a top surface of the upper electrode, a first interlayer insulating layer covering the first barrier layer, the first interlayer insulating layer including a material different from the first barrier layer, and a first contact penetrating through the first barrier layer and the first interlayer insulating layer in the vertical direction, the first contact connected to the upper electrode.
    Type: Application
    Filed: October 10, 2023
    Publication date: May 30, 2024
    Inventors: Yong Jin SHIN, Dong Woo KIM, Mun Jun KIM, Jun Kwan KIM, On Yu BAE, Kyoung Min WOO
  • Patent number: 6945072
    Abstract: The present invention discloses a built-in type outdoor unit for an air conditioner to provide an efficient installation structure for installing the outdoor unit increased in capacity due to high air conditioning capacity in a built-in type. The built-in type outdoor unit includes a louver frame being fixedly installed on a rectangular space inner wall formed on an outer wall of a building, being divided into a suction area and a discharge area, having a plurality of louver blades in each area, and sucking and discharging air through gaps between the louver blades, and an outdoor unit casing being fixedly installed on the inside bottom of the building to contact the louver frame, and having its one surface facing the suction area and the discharge area of the louver frame opened and the other surfaces closed.
    Type: Grant
    Filed: April 18, 2003
    Date of Patent: September 20, 2005
    Assignee: LG Electronics Inc.
    Inventors: In-Gyu Kim, Young-Yu Bae, Jac-Hyung Koo, Byung-Il Park, Kyeong-Ho Kim, Yang-Ho Kim, Young-Ho Hong, Kyeong-Wook Heo, Kang-Wook Cha, Si-Kyong Sung, Dong-Hyuk Lee, Seong-Min Kang, Tae-Geun Kim