Patents by Inventor Oon Su Lin

Oon Su Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Organic light emitting device with improved moisture seal
    Patent number: 6710542
    Abstract: An electroluminescent device and method for making the same. The electroluminescent device includes a substrate that is impermeable to water and oxygen having a first electrode thereon. An electroluminescent layer is in electrical contact with the first electrode, and a second electrode is in electrical contact with the electroluminescent layer. A seal having layers of epoxy and alternating with layers of SiNH prevents water and oxygen from reaching the second electrode. The epoxy preferably has a cure temperature less than 140° C. Similarly, the silicon nitride layer is preferably deposited at a temperature below 140° C. The layer of SiNH preferably has an etch rate of less than 50 A/sec in 10% HF solution.
    Type: Grant
    Filed: August 3, 2002
    Date of Patent: March 23, 2004
    Assignee: Agilent Technologies, Inc.
    Inventors: Tan Boon Chun, Oon Su Lin, Daniel B. Roitman, Karen L. Seaward
  • ORGANIC LIGHT EMITTING DEVICE WITH IMPROVED MOISTURE SEAL
    Publication number: 20040021416
    Abstract: An electroluminescent device and method for making the same. The electroluminescent device includes a substrate that is impermeable to water and oxygen having a first electrode thereon. An electroluminescent layer is in electrical contact with the first electrode, and a second electrode is in electrical contact with the electroluminescent layer. A seal having layers of epoxy and alternating with layers of SiNH prevents water and oxygen from reaching the second electrode. The epoxy preferably has a cure temperature less than 140° C. Similarly, the silicon nitride layer is preferably deposited at a temperature below 140° C. The layer of SiNH preferably has an etch rate of less than 50 A/sec in 10% HF solution.
    Type: Application
    Filed: August 3, 2002
    Publication date: February 5, 2004
    Inventors: Tan Boon Chun, Oon Su Lin, Daniel B. Roitman, Karen L. Seaward