Patents by Inventor Optoelectronics Co., Ltd.

Optoelectronics Co., Ltd. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130208487
    Abstract: A LED-packaging arrangement with uniform light and wide angle includes: a substrate, a reflector cup molded upon the substrate, a light-emitting diode mounted on the substrate and located inside the reflector cup, an encapsulation body molded inside the reflector cup and covering the light-emitting diode, and a wide-angle lens molded directly on the top surface of the reflector cup and the encapsulation body to form a wide-angle light distribution and an uniform light emitting. Whereby, the present invention substantially reduces an optical attenuation to overcome the optical attenuation problem of the prior art, and avoids an alignment and combination problems of the conventional secondary packaging.
    Type: Application
    Filed: January 29, 2013
    Publication date: August 15, 2013
    Applicant: LUMENMAX OPTOELECTRONICS CO., LTD.
    Inventor: LUMENMAX OPTOELECTRONICS CO., LTD.
  • Publication number: 20130153660
    Abstract: Provided is an optical detecting device, wherein a photodiode is provided on a first surface of a substrate, a planar output electrode for outputting electrical signals corresponding to a quantity of light received by the photodiode is provided on a second surface of the substrate opposite to the first surface, a cutout portion is provided in a third surface of the substrate such that the cutout portion is in contact with the output electrode provided on the second surface, said third surface being different from the first surface and the second surface, and an electrode connected to the output electrode is provided on the inner surface of the cutout portion.
    Type: Application
    Filed: February 12, 2013
    Publication date: June 20, 2013
    Applicant: Optoelectronics Co., Ltd.
    Inventor: Optoelectronics Co., Ltd.
  • Publication number: 20130057178
    Abstract: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) die on the substrate having a pair of power contacts, at least one light emitting diode (LED) on the substrate controlled by the application specific integrated circuit (ASIC) die, a wireless receiver on the substrate configured to receive signals for controlling the application specific integrated circuit (ASIC) die, and a wireless transmitter in signal communication with the wireless receiver configured to send the signals.
    Type: Application
    Filed: November 7, 2012
    Publication date: March 7, 2013
    Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.
    Inventor: SemiLEDS Optoelectronics Co., Ltd.
  • Publication number: 20130057156
    Abstract: A light emitting diode (LED) system includes one or more light emitting diodes (LED), or other lighting devices, configured to provide lighting in an area, and a wireless control system configured to control the light emitting diodes (LED). The wireless control system includes at least one transmitter/receiver device in signal communication with the light emitting diode (LED), and a wireless control device operable by a user, configured to send input signals to the transmitter/receiver device for controlling the light emitting diode (LED), and to receive output signals from the transmitter/receiver device for indicating a status of the light emitting diodes (LED).
    Type: Application
    Filed: November 7, 2012
    Publication date: March 7, 2013
    Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.
    Inventor: SemiLEDS Optoelectronics Co., Ltd.
  • Publication number: 20130026448
    Abstract: A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer and a second-type semiconductor layer. The light emitting diode (LED) die also includes a peripheral electrode on the first-type semiconductor layer located proximate to an outer periphery of the first-type semiconductor layer configured to spread current across the first-type semiconductor layer. A method for fabricating the light emitting diode (LED) die includes the step of forming an electrode on the outer periphery of the first-type semiconductor layer at least partially enclosing and spaced from the multiple quantum well (MQW) layer configured to spread current across the first-type semiconductor layer.
    Type: Application
    Filed: October 4, 2012
    Publication date: January 31, 2013
    Applicant: SEMILEDS OPTOELECTRONICS CO., LTD.
    Inventor: SemiLEDS Optoelectronics Co., Ltd.