Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.

Abstract: A mounting device for a base station antenna includes a support member having: a first section, the first section being configured to, in a mounted state of a base station antenna and a holding pole, connect with an inner side of the base station antenna facing the holding pole in an end section of the base station antenna; a second section, the second section being configured to, in the mounted state of the base station antenna and the holding pole, extend from the first section in a direction away from the holding pole and extend beyond an end side of the end section in a longitudinal direction of the base station antenna; and a connecting portion that is connected with the second section and configured to be directly or indirectly connected to the holding pole in the mounted state of the base station antenna and the holding pole.

Abstract: A method includes forming a conductive member over a first conductive line; forming a second conductive line over the conductive member; and removing a portion of the conductive member exposed by the second conductive line to form a conductive via. The formation of the second conductive line is implemented prior to the formation of the conductive via. A semiconductor structure includes a first conductive line having a first surface; a second conductive line disposed above the first conductive line and having a second surface overlapping the first surface; and a conductive via electrically connected to the first surface and the second surface. The conductive via includes a first end disposed within the first surface, a second end disposed within the second surface, and a cross-section between the first end and the second end, wherein at least two of interior angles of the cross-section are substantially unequal to 90°.

Abstract: Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming isolation regions on opposing sides of the fin; forming a dummy gate over the fin; reducing a thickness of a lower portion of the dummy gate proximate to the isolation regions, where after reducing the thickness, a distance between opposing sidewalls of the lower portion of the dummy gate decreases as the dummy gate extends toward the isolation regions; after reducing the thickness, forming a gate fill material along at least the opposing sidewalls of the lower portion of the dummy gate; forming gate spacers along sidewalls of the dummy gate and along sidewalls of the gate fill material; and replacing the dummy gate with a metal gate.

Abstract: An apparatus, method, and system for identifying and obtaining information related to a substrate support and/or a pre-heat ring in a process chamber via imaging and image processing. In an embodiment, a substrate support is provided. The substrate support generally includes a top surface configured to receive a substrate in a process chamber and a marking feature disposed on the top surface of the substrate support, the marking feature configured to be detectable by an imaging apparatus coupled to the process chamber to provide information related to the substrate support via imaging when the substrate support is disposed within the process chamber.

Abstract: The present application relates to a top cover assembly and a secondary battery. The top cover assembly includes: a top cover plate including a lead-out hole and an inside surface forming the lead-out hole; an electrode terminal including a cylindrical portion penetrating the lead-out hole and an annular flange, the annular flange extending beyond the inside surface along the lead-out hole; a sealing ring including a barrel portion and a ring portion, surrounding the cylindrical portion by the barrel portion. The ring portion includes a first ring body and a second ring body distributed in the radial direction; an insulating member including a connecting portion and an extension portion, and the connecting portion seals the second ring body; a portion of the insulating member beyond the second ring body forms the extension portion, and in the radial direction, the extension portion extends beyond the annular flange.

Abstract: A method of testing a semiconductor package includes: forming a charge measurement unit over a carrier substrate; forming a first dielectric layer over the charge measurement unit; forming a first metallization layer over the dielectric layer, wherein the forming of the first metallization layer induces first charges to accumulate on the charge measurement unit; performing a first test against the charge measurement unit to determine whether breakdown occurs in the charge measurement unit; and in response to determining that no breakdown occurs in the charge measurement unit, forming a second dielectric layer over the first metallization layer.

Abstract: A device including delay cells connected in series and in a feedback loop to provide a ring oscillator. At least one of the delay cells in the ring oscillator is a stacked gate delay cell that includes two or more PMOS transistors having first drain/source paths connected in series to each other and having first gates connected to each other and two or more NMOS transistors having second drain/source paths connected in series to each other and to the first drain/source paths and having second gates connected to each other and to the first gates.

Abstract: The present disclosure describes fabricating devices with tunable gate height and effective capacitance. A method includes forming a first metal gate stack in a dummy region of a semiconductor substrate and a second metal gate stack in an active device region of the semiconductor substrate, and performing a chemical mechanical polishing (CMP) process using a slurry including charged abrasive nanoparticles. The first and second metal gate stacks are different in composition. The charged abrasive nanoparticles include a first concentration in the active device region different from a second concentration in the dummy region.

Abstract: In some aspects of the present disclosure, a circuit in a first power domain is disclosed. In some aspects, the circuit in a first power domain includes a first enable-controlled logic gate coupled to a second circuit in a second power domain different from the first power domain. In some aspects, the circuit in a first power domain includes a feedback loop coupled to the first enable-controlled logic gate, the feedback loop including a first inverter and a second enable-controlled logic gate coupled to the first inverter. In some aspects, the circuit in a first power domain includes a second inverter coupled to the feedback loop.

Abstract: Methods, systems, and apparatus for measuring the dispersive shift or linewidth of a resonator coupled to a qubit. In one aspect, a method includes the actions of: generating resonator response data, comprising, for each of two computational states of the qubit: for each of multiple qubit drive frequencies: for each of multiple resonator drive frequencies: preparing the qubit in the computational state; applying a first drive pulse with the resonator drive frequency to the resonator, applying a second drive pulse with the qubit drive frequency to the qubit; measuring the state of the qubit; and processing the generated resonator response data to determine the dispersive shift or linewidth of the resonator.

Abstract: Aspects of this disclosure relate to a multiplexer with an acoustic assisted trap circuit. The multiplexer includes an acoustic wave filter with an acoustic wave resonator and an impedance network that together provide a trap for a harmonic associated with another acoustic wave filter of the multiplexer. The acoustic wave filter can have an edge of a passband that is farther from the harmonic than other acoustic filters of the multiplexer.

Abstract: This disclosure relates to techniques for a wireless device to perform gradual timing adjustments in a non-terrestrial wireless communication system. According to the techniques described herein, a wireless device may establish a non-terrestrial network based wireless link with a cellular base station. The wireless device may detect a trigger for changing a gradual timing adjustment rate from a first gradual timing adjustment rate to a second gradual timing adjustment rate. The wireless device may determine a time window for which to perform gradual timing adjustment at the second gradual timing adjustment rate. The wireless device may perform gradual timing adjustment at the second gradual timing adjustment rate for the time window.

Abstract: For example, a wireless communication device may be configured to generate a wide bandwidth Long Training Field (LTF) configured for channel sounding over a wide channel bandwidth of at least 320 Megahertz (MHz). For example, the wide bandwidth LTF may include a plurality of Orthogonal Frequency Division Multiplexing (OFDM) symbols over the wide channel bandwidth. For example, the wireless communication device may be configured to transmit a Null Data Packet (NDP) over the wide channel bandwidth. For example, the NDP may include a non-High-Throughput (non-HT) Short Training Field (L-STF), a non-HIT LTF (L-LTF) after the L-STF, a non-HT Signal (L-SIG) field after the L-LTF, a Repeated L-SIG (RL-SIG) field after the L-SIG field, and the wide bandwidth LTF after the RL-SIG field.

Abstract: A semiconductor device includes a plurality of connectors and at least one insulating layer disposed over a semiconductor substrate. A molding layer extends around the plurality of connectors. A sidewall of the molding layer that is closest to a scribe line is offset from the scribe line.

Abstract: This application provides a modified negative electrode material, a preparation method therefor, a negative electrode plate, a secondary battery, and an electrical device. The modified negative electrode material includes a negative electrode active substrate and a silicate ester group connected to the negative electrode active substrate through an oxygen atom, and a structure of the silicate ester group is shown in formula (1), wherein each R1 is independently selected from substituted or unsubstituted alkyl having 1 to 10 carbon atoms, or substituted or unsubstituted alkenyl having 1 to 10 carbon atoms; and * represents a connecting site.

Abstract: The present application discloses an electrode slurry, comprising an electrode active material, a binder composition and a solvent; the binder composition comprises a thermally crosslinked polymer and a thermal crosslinking agent, wherein the thermally crosslinked polymer comprises one or more of an epoxy resin, an acrylic-capped prepolymer and an acrylate-capped prepolymer.

Abstract: Provided are a sulfide solid electrolyte, and a preparation method and use thereof. The sulfide solid electrolyte has a chemical composition formula of Li6P1-a(M)aS5X (where M is one or more selected from the group consisting of V, Nb, and Ta, and X is one or more selected from the group consisting of F, Cl, and Br). The preparation method includes: weighing raw materials of a Li source, a P source, an S source, an M source, and an X source, and mixing to be uniform to obtain a mixture, and subjecting the mixture to ball milling to obtain a precursor powder of the sulfide solid electrolyte; sieving the precursor powder to obtain a sieved powder, and then pressing the sieved powder into a solid sheet; and subjecting the solid sheet to vacuum high-temperature sintering to obtain the sulfide solid electrolyte.

Abstract: A monomer composition is made, particularly to prepare a polymer electrolyte precursor composition capable of forming a solid polymer electrolyte. The monomer composition includes A) an alkylene oxide-based monomer and B) a siloxane monomer. A copolymer electrolyte precursor composition is made for preparation of a solid polymer electrolyte. A polymerization method prepares solid copolymer electrolyte. A copolymer, a solid copolymer electrolyte, and a solid-state lithium secondary battery are made. A method to prepare a solid-state lithium secondary battery is developed, and another method improves electrolyte mechanical property, ionic conductivity, and/or cycling performance in a lithium secondary battery by preparing a solid polymer electrolyte the monomer. An electrochemical device and a device are also provided.