Abstract: An optoelectronic device comprising at least one quantum wire and at least one quantum dot (QD) incorporated in the quantum wire with the band gap of the quantum wire being larger than the band gap of the quantum dot. The QDs and QD arrays are embedded in various quantum wires, thus providing higher yields in optoelectronic devices, such as light emitting diodes, lasers, and photodetectors. This is achieved by a nearly complete suppression of the nonradiative Auger recombination and enhancement of the light extraction efficiency.

Abstract: One embodiment provides a computing device. The computing device is configured to couple to a display. The computing device includes an ambient detection module configured to detect a characteristic of ambient light relative to at least a portion of a display area of the display. The computing device further includes a displayed image optimization module configured to optimize a feature of at least a portion of a displayed image based, at least in part, on the characteristic of the ambient light.

Abstract: Disclosed herein are devices, systems and methods for securely accessing data transferred via multiple isolated networks network, comprising adjusting one or more mapping records comprising network mapping and routing settings for a plurality of isolated networks connecting a plurality of clients to a server to expose one of the plurality of isolated networks to one or more processing engines executed by the server while concealing all other isolated networks from the respective processing engine, activating a lock configured to enable each processing engines to execute a single thread, executing the processing engine(s) to fetch data from the exposed isolated network(s), and releasing the lock, Wherein each processing engine is able to access the isolated network exposed to the respective processing engine while unable to access any of the isolated networks concealed from respective processing engine.

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

Abstract: A resin composition and uses thereof are provided. The resin composition includes: (A) an epoxy resin; (B) a bismaleimide resin; and (C) a first flame retardant having a structure of formula (I): Wherein Ar is a C3 to C18 heteroaryl or a C6 to C18 aryl; R1 is H or a C1 to C18 alkyl; and R2 and R3 are independently H, a C1 to C18 alkyl, a C3 to C18 heteroaryl, or a C6 to C18 aryl.

Abstract: A solvent-free resin composition and uses thereof are provided. The resin composition includes: (A) a maleic acid-modified liquid hydrocarbon resin; (B) a first filler having a D50 particle size of 1 ?m to 4 ?m; and (C) a second filler having a D50 particle size of 5 ?m to 10 ?m. The solvent-free resin composition can be used to fill the holes of printed circuit boards.

Abstract: A solution for illuminating plants can include: a set of visible light sources configured to emit visible radiation directed at the plant; a set of infrared radiation sources configured to emit ultraviolet radiation directed at the plant; a feedback component configured to acquire data regarding the plant; and a control unit configured to control and adjust radiation directed at the plant based on the data.

Abstract: An approach for controlling light exposure of a light sensitive object is described. Aspects of this approach involve using a first set of radiation sources to irradiate the object with visible radiation and infrared radiation. A second set of radiation sources spot irradiate the object in a set of locations with a target ultraviolet radiation having a range of wavelengths. Radiation sensors detect radiation reflected from the object and environment condition sensors detect conditions of the environment in which the object is located during irradiation. A controller controls irradiation of the light sensitive object by the first and second set of radiation sources according to predetermined optimal irradiation settings specified for various environmental conditions. In addition, the controller adjusts irradiation settings of the first and second set of radiation sources as a function of measurements obtained by the various sensors.

Abstract: Disclosed herein are devices, systems and methods for securely accessing data transferred via multiple isolated networks network, comprising adjusting one or more mapping records comprising network mapping and routing settings for a plurality of isolated networks connecting a plurality of clients to a server to expose one of the plurality of isolated networks to one or more processing engines executed by the server while concealing all other isolated networks from the respective processing engine, activating a lock configured to enable each processing engines to execute a single thread, executing the processing engine(s) to fetch data from the exposed isolated network(s), and releasing the lock. Wherein each processing engine is able to access the isolated network exposed to the respective processing engine while unable to access any of the isolated networks concealed from respective processing engine.

Abstract: A bipolar nanocomposite semiconductor (BNS) material in which electrons and holes are separately transported throughout the BNS volume via an interpenetrating plurality of networks, where some of the networks have one conductivity type and others have the opposite conductivity type. The interpenetrating networks can include one or more multiple nanocrystalline structures, metal and dielectric networks and are intimately connected to enable band-like transport of both electrons and holes throughout the material.

Abstract: A bipolar nanocomposite semiconductor (BNS) material in which electrons and holes are separately transported throughout the BNS volume via an interpenetrating plurality of networks, where some of the networks have one conductivity type and others have the opposite conductivity type. The interpenetrating networks can include one or more multiple nanocrystalline structures, metal and dielectric networks and are intimately connected to enable band-like transport of both electrons and holes throughout the material.

Abstract: An optoelectronic device comprising at least one quantum well (QW) and at least one quantum dot (QD) incorporated in the quantum well with the band gap of the quantum well being larger than the band gap of the quantum dot. The QDs and QD arrays are embedded in various QW, thus providing higher yields in optoelectronic devices, such as light emitting diodes, lasers, and photodetectors. This is achieved by a nearly complete suppression of the nonradiative Auger recombination and enhancement of the light extraction efficiency.

Abstract: A metal-clad laminate, a printed circuit board using the same and a method for manufacturing the metal-clad laminate. The metal-clad laminate comprises: a first dielectric layer, comprising a first dielectric material and not comprising a reinforcing fabric, the first dielectric material comprising 20 wt % to 60 wt % of a first fluoropolymer and 40 wt % to 80 wt % of a first filler; a second dielectric layer disposed on one side of the first dielectric layer and comprising a reinforcing fabric and a second dielectric material formed on the surface of the reinforcing fabric, wherein the thickness of the reinforcing fabric is not higher than 65 ?m and the second dielectric material comprises 55 wt % to 100 wt % of a second fluoropolymer and 0 to 45 wt % of a second filler; and a metal foil disposed on the other side of the second dielectric layer that is opposite to the first dielectric layer.

Abstract: Various embodiments are described that relate to failure determination for an integrated circuit. An integrated circuit can be tested to determine if the integrated circuit is functioning properly. The integrated circuit can be subjected to a specific radiation such that the integrated circuit produces a response. This response can be compared against an expected response to determine if the response matches the expected response. If the response does not match the expected response, then the integrated circuit fails the test. If the response matches the expected response, then the integrated circuit passes the test.

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

Abstract: A metal-clad laminate is provided. The metal-clad laminate includes: a dielectric layer, which has a first reinforcing material and a dielectric material formed on the surface of the first reinforcing material, wherein the dielectric material includes 60 wt % to 80 wt % of a first fluoropolymer and 20 wt % to 40 wt % of a first filler; an adhesive layer, which is disposed on at least one side of the dielectric layer and includes an adhesive material, wherein the adhesive material has 60 wt % to 70 wt % of a second fluoropolymer and 30 wt % to 40 wt % of a second filler; and a metal foil, which is disposed on the other side of the adhesive layer that is opposite to the dielectric layer, wherein the melting point of the second fluoropolymer is lower than the melting point of the first fluoropolymer.

Abstract: One embodiment provides a line of sight detector. The line of sight detector includes a first TeraFET (field effect transistor) including a first source, a first drain, a first gate, and a first channel having a first end and a second end. The line of sight detector further includes a first source antenna coupled to the first source; a first drain antenna coupled to the first drain; and a third antenna. Each antenna is configured to receive an incident radiation signal having a frequency in a sub terahertz or a terahertz frequency range. Each antenna is positioned a respective distance from each other antenna. Each distance is less than one wavelength of the incident radiation signal.

Abstract: A fluororesin composition is provided. The fluororesin composition comprises the following constituents: (A) a first fluororesin, which is polytetrafluoroethylene (PTFE) resin; (B) a first filler, which is a flat glass fiber; and (C) particles of a second fluororesin, which are coated with polysiloxane, wherein, the particle size of the polysiloxane-coated particles of second fluororesin ranges from 0.2 ?m to 80 ?m, and the melting point of the second fluororesin is lower than the melting point of the first fluororesin.

Abstract: A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.

Abstract: There is described a system and method for managing timeseries data. A timeseries consumer receives timeseries data from multiple devices, provides the timeseries data to a particular partition of a data table based on an insert time of the timeseries data to the data table, and records metadata associated with the timeseries data provided to the particular partition at a track table. A timeseries archiver identifies recent records of the data table based on insert time(s) and archival time(s) of a milestone table, archives the timeseries data of the data table associated with the recent records to an external system, and updates the archival time(s) of the milestone table and the track table. The timeseries purger drops an archived partition of the data table based on determining that all records of the archived partition have been archived.