Abstract: In accordance with an embodiment, a method includes: generating a gate voltage for a field-effect transistor in response to an input signal; generating a pulse signal with a pulse length that corresponds to the time that it takes until the gate voltage attains a specific level transition in response to a corresponding level transition in the input signal; and monitoring the pulse signal to detect whether the pulse length is outside a specific range.

Abstract: A semiconductor package includes an encapsulant body; an upper electrically conductive element having an outwardly exposed metal surface; a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer; a first electrically conductive spacer between the upper electrically conductive element and the upper electrically conductive layer; a power semiconductor chip between the upper electrically conductive element and the upper electrically conductive layer; and a second electrically conductive spacer between the upper electrically conductive element and the power semiconductor chip, a first carrier region of the upper electrically conductive layer is connected to a first power terminal, a second carrier region of the upper electrically conductive layer is alongside the first carrier region and is connected to a phase terminal, a first region of the upper electrically conductive element is connec

Abstract: A semiconductor package includes an encapsulant body; a first electrically conductive element having an outwardly exposed metal surface; a first carrier substrate having a first electrically conductive layer, a second electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer; a first electrically conductive spacer between the first electrically conductive element and the first electrically conductive layer; a power semiconductor chip between the first electrically conductive element and the first electrically conductive layer; and a second electrically conductive spacer between the first electrically conductive element and the power semiconductor chip, a first carrier region of the first electrically conductive layer is connected to a first power terminal, a second carrier region of the first electrically conductive layer is alongside the first carrier region and is connected to a second power terminal, a first region of the first electrically conductive element is

Abstract: A double-sided coolable semiconductor package includes an upper electrically conductive element having an outwardly exposed metal surface, a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer with an outwardly exposed surface and an electrical insulating layer arranged between the upper and lower electrically conductive layers, a first electrically conductive spacer arranged between the upper electrically conductive element and the upper electrically conductive layer, a power semiconductor chip arranged between the upper electrically conductive element and the upper electrically conductive layer, a second electrically conductive spacer arranged between the upper electrically conductive element and the power semiconductor chip, and a passive electrical component electrically connected to the upper electrically conductive layer of the lower carrier substrate.

Abstract: A semiconductor package includes an upper electrically conductive element having a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer arranged between the electrically conductive layers, a first electrically conductive spacer arranged between the upper electrically conductive element and the upper electrically conductive layer, a power semiconductor chip arranged between the upper electrically conductive element and the upper electrically conductive layer, and a second electrically conductive spacer arranged between the upper electrically conductive element and the chip. A first carrier region of the upper electrically conductive layer is configured to apply a positive supply voltage. A second carrier region alongside the first carrier region is configured as a phase.

Abstract: A semiconductor package includes an encapsulant body; an upper electrically conductive element having an outwardly exposed metal surface; a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer; a first electrically conductive spacer between the upper electrically conductive element and the upper electrically conductive layer; a power semiconductor chip between the upper electrically conductive element and the upper electrically conductive layer; and a second electrically conductive spacer between the upper electrically conductive element and the power semiconductor chip, a first carrier region of the upper electrically conductive layer is connected to a first power terminal, a second carrier region of the upper electrically conductive layer is alongside the first carrier region and is connected to a phase terminal, a first region of the upper electrically conductive element is connec

Abstract: A semiconductor package having a double-sided cooling structure includes an upper electrically conductive element having an outwardly exposed metal surface, a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer arranged between the upper and lower electrically conductive layers, a first electrically conductive spacer arranged between the upper electrically conductive element and the upper electrically conductive layer, a power semiconductor chip arranged between the upper electrically conductive element and the upper electrically conductive layer, a second electrically conductive spacer arranged between the upper electrically conductive element and the power semiconductor chip, and a shielding structure configured to electromagnetically shield a line of the semiconductor package.

Abstract: A semiconductor package includes an upper electrically conductive element having a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer arranged between the electrically conductive layers, a first electrically conductive spacer arranged between the upper electrically conductive element and the upper electrically conductive layer, a power semiconductor chip arranged between the upper electrically conductive element and the upper electrically conductive layer, and a second electrically conductive spacer arranged between the upper electrically conductive element and the chip. A first carrier region of the upper electrically conductive layer is configured to apply a positive supply voltage. A second carrier region alongside the first carrier region is configured as a phase.

Abstract: A semiconductor package having a double-sided cooling structure includes an upper electrically conductive element having an outwardly exposed metal surface, a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer arranged between the upper and lower electrically conductive layers, a first electrically conductive spacer arranged between the upper electrically conductive element and the upper electrically conductive layer, a power semiconductor chip arranged between the upper electrically conductive element and the upper electrically conductive layer, a second electrically conductive spacer arranged between the upper electrically conductive element and the power semiconductor chip, and a shielding structure configured to electromagnetically shield a line of the semiconductor package.

Abstract: A double-sided coolable semiconductor package includes an upper electrically conductive element having an outwardly exposed metal surface, a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer with an outwardly exposed surface and an electrical insulating layer arranged between the upper and lower electrically conductive layers, a first electrically conductive spacer arranged between the upper electrically conductive element and the upper electrically conductive layer, a power semiconductor chip arranged between the upper electrically conductive element and the upper electrically conductive layer, a second electrically conductive spacer arranged between the upper electrically conductive element and the power semiconductor chip, and a passive electrical component electrically connected to the upper electrically conductive layer of the lower carrier substrate.

Abstract: In various embodiments a method for determining a demagnetization zero current time, at which a transformer is substantially demagnetized, for a switched mode power supply comprising a transformer is provided, wherein the method may include: applying a first current through a winding of one side of the transformer; interrupting the current flow of the first current; measuring a time at which a voltage across a winding of another side of the transformer becomes substantially zero; and determining the demagnetization zero current time using the measured time.

Abstract: In various embodiments a method for determining a demagnetization zero current time, at which a transformer is substantially demagnetized, for a switched mode power supply comprising a transformer is provided, wherein the method may include: applying a first current through a winding of one side of the transformer; interrupting the current flow of the first current; measuring a time at which a voltage across a winding of another side of the transformer becomes substantially zero; and determining the demagnetization zero current time using the measured time.

Abstract: A circuit configuration for signal balancing in antiphase bus drivers, particularly for a CAN bus, which have, in each driver path of the bus, a driver amplifier unit and an output stage, driven by the latter, having a power transistor circuit for transmitting an antiphase signal using a two-wire line. A control circuit is connected to one of the driver paths and controls the turn-on resistance of the power transistor circuit in this driver path such that the power transistor circuits in the two driver paths have the same turn-on resistance.

Abstract: A DC voltage chopper contains a power switch device with a drive circuit, an LC filter circuit connected in a main circuit of the power switch device, a commutating circuit connected in parallel to the LC filter circuit, and a comparison circuit with a hysteretic function and has an output connected to the drive circuit. A first input terminal of the comparison circuit is connected to an output terminal of the DC voltage chopper, and a second input terminal of the comparison circuit is connected to a reference voltage generator that generates a reference voltage. The drive circuit has a logic circuit with a first input receiving the output signal of the comparison signal of the comparison circuit, and a second input receiving a trigger clock signal with a fixed frequency. The DC voltage chopper combines the good attributes of hysteresis control with a fixed switching frequency.

Abstract: A DC voltage chopper contains a power switch device with a drive circuit, an LC filter circuit connected in a main circuit of the power switch device, a commutating circuit connected in parallel to the LC filter circuit, and a comparison circuit with a hysteretic function and has an output connected to the drive circuit. A first input terminal of the comparison circuit is connected to an output terminal of the DC voltage chopper, and a second input terminal of the comparison circuit is connected to a reference voltage generator that generates a reference voltage. The drive circuit has a logic circuit with a first input receiving the output signal of the comparison signal of the comparison circuit, and a second input receiving a trigger clock signal with a fixed frequency. The DC voltage chopper combines the good attributes of hysteresis control with a fixed switching frequency.

Abstract: A circuit configuration for signal balancing in antiphase bus drivers, particularly for a CAN bus, which have, in each driver path of the bus, a driver amplifier unit and an output stage, driven by the latter, having a power transistor circuit for transmitting an antiphase signal using a two-wire line. A control circuit is connected to one of the driver paths and controls the turn-on resistance of the power transistor circuit in this driver path such that the power transistor circuits in the two driver paths have the same turn-on resistance.

Abstract: The output driver circuit of an integrated circuit has several pairs of driver circuits and driver control circuits as well as a control device. Each pair of driver control circuit and driver circuit forms a driver stage. The driver stages are connected in series. Based on the input signal of the output driver circuit, the control device switches the signal direction through the succession of driver stages in such a way that, at the time the output driver circuit is switched either on or off, the driver stages are switched in a time delayed manner, whereby current pulses on the feeding lines and disturbance voltages induced in inductive loads are reduced.

Abstract: The output driver circuit of an integrated circuit has several pairs of driver circuits and driver control circuits as well as a control device. Each pair of driver control circuit and driver circuit forms a driver stage. The driver stages are connected in series. Based on the input signal of the output driver circuit, the control device switches the signal direction through the succession of driver stages in such a way that, at the time the output driver circuit is switched either on or off, the driver stages are switched in a time delayed manner, whereby current pulses on the feeding lines and disturbance voltages induced in inductive loads are reduced.