Patents by Inventor Orest J. Glembocki
Orest J. Glembocki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10866190Abstract: A plasmonic grating sensor having periodic arrays of vertically aligned plasmonic nanopillars, nanowires, or both with an interparticle pitch ranging from ?/8-2?, where ? is the incident wavelength of light divided by the effective index of refraction of the sample; a coupled-plasmonic array sensor having vertically aligned periodic arrays of plasmonically coupled nanopillars, nanowires, or both with interparticle gaps sufficient to induce overlap between the plasmonic evanescent fields from neighboring nanoparticles, typically requiring edge-to-edge separations of less than 20 nm; and a plasmo-photonic array sensor having a double-resonant, periodic array of vertically aligned subarrays of 1 to 25 plasmonically coupled nanopillars, nanowires, or both where the subarrays are periodically spaced at a pitch on the order of a wavelength of light.Type: GrantFiled: November 27, 2018Date of Patent: December 15, 2020Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Orest J. Glembocki, Sharka M. Prokes, Ronald W. Rendell
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Publication number: 20190162669Abstract: A plasmonic grating sensor having periodic arrays of vertically aligned plasmonic nanopillars, nanowires, or both with an interparticle pitch ranging from ?/8-2?, where ? is the incident wavelength of light divided by the effective index of refraction of the sample; a coupled-plasmonic array sensor having vertically aligned periodic arrays of plasmonically coupled nanopillars, nanowires, or both with interparticle gaps sufficient to induce overlap between the plasmonic evanescent fields from neighboring nanoparticles, typically requiring edge-to-edge separations of less than 20 nm; and a plasmo-photonic array sensor having a double-resonant, periodic array of vertically aligned subarrays of 1 to 25 plasmonically coupled nanopillars, nanowires, or both where the subarrays are periodically spaced at a pitch on the order of a wavelength of light.Type: ApplicationFiled: November 27, 2018Publication date: May 30, 2019Inventors: Joshua D. Caldwell, Orest J. Glembocki, Sharka M. Prokes, Ronald W. Rendell
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Publication number: 20180203263Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.Type: ApplicationFiled: March 15, 2018Publication date: July 19, 2018Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: James Peter Long, Joshua D. Caldwell, Jeffrey C. Owrutsky, Orest J. Glembocki
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Publication number: 20180203264Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.Type: ApplicationFiled: March 15, 2018Publication date: July 19, 2018Applicant: The Goverment of the United States of America, as represented by the Secretary of the NavyInventors: James Peter Long, Joshua D. Caldwell, Jeffrey C. Owrutsky, Orest J. Glembocki
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Patent number: 9952454Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.Type: GrantFiled: April 21, 2017Date of Patent: April 24, 2018Assignee: The United States of America, as represented by the Secretary of the NavyInventors: James Peter Long, Joshua D. Caldwell, Jeffrey C. Owrutsky, Orest J. Glembocki
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Patent number: 9878516Abstract: A metamaterial thin film with plasmonic properties formed by depositing metallic films by atomic layer deposition onto a substrate to form a naturally occurring mosaic-like nanostructure having two-dimensional features with air gaps between the two-dimensional features. Due to the unique deposition nanostructure, plasmonic thin films of metal or highly conducting materials can be produced on any substrate, including fabrics and biological materials. In addition, these plasmonic materials can be used in conjunction with geometric patterns that may be used to create multiple resonance plasmonic metamaterials.Type: GrantFiled: March 5, 2013Date of Patent: January 30, 2018Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Orest J. Glembocki, Sharka M Prokes, Joshua D. Caldwell, Mikko Ritala, Markku Leskela, Jaakko Niinisto, Eero Santala, Timo Hatanpaa, Maarit Kariemi
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Publication number: 20170227797Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.Type: ApplicationFiled: April 21, 2017Publication date: August 10, 2017Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: James Peter Long, Joshua D. Caldwell, Jeffrey C. Owrutsky, Orest J. Glembocki
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Publication number: 20160103341Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.Type: ApplicationFiled: December 17, 2015Publication date: April 14, 2016Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: James Peter Long, Joshua D. Caldwell, Jeffrey C. Owrutsky, Orest J. Glembocki
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Patent number: 9274352Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.Type: GrantFiled: October 24, 2014Date of Patent: March 1, 2016Assignee: The United States of America, as represented by the Secretary of the NavyInventors: James Peter Long, Joshua D. Caldwell, Jeffrey C. Owrutsky, Orest J. Glembocki
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Patent number: 9244268Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.Type: GrantFiled: February 7, 2014Date of Patent: January 26, 2016Assignee: The United States of America, as represented by the Secretary of the NavyInventors: James Peter Long, Joshua D. Caldwell, Jeffrey C. Owrutsky, Orest J. Glembocki
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Patent number: 9195052Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.Type: GrantFiled: June 12, 2014Date of Patent: November 24, 2015Assignee: The United States of America, as represented by the Secretary of the NavyInventors: James Peter Long, Joshua D. Caldwell, Jeffrey C. Owrutsky, Orest J. Glembocki
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Publication number: 20150063739Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.Type: ApplicationFiled: October 24, 2014Publication date: March 5, 2015Applicant: Naval Research LaboratoryInventors: James Peter Long, Joshua D. Caldwell, Jeffrey C. Owrutsky, Orest J. Glembocki
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Publication number: 20140294338Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.Type: ApplicationFiled: June 12, 2014Publication date: October 2, 2014Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: James Peter Long, Joshua D. Caldwell, Jeffrey C. Owrutsky, Orest J. Glembocki
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Publication number: 20140224989Abstract: Optical devices that include one or more structures fabricated from polar-dielectric materials that exhibit surface phonon polaritons (SPhPs), where the SPhPs alter the optical properties of the structure. The optical properties lent to these structures by the SPhPs are altered by introducing charge carriers directly into the structures. The carriers can be introduced into these structures, and the carrier concentration thereby controlled, through optical pumping or the application of an appropriate electrical bias.Type: ApplicationFiled: February 7, 2014Publication date: August 14, 2014Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: James Peter Long, Joshua D. Caldwell, Jeffrey C. Owrutsky, Orest J. Glembocki
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Publication number: 20130252016Abstract: A metamaterial thin film with plasmonic properties formed by depositing metallic films by atomic layer deposition onto a substrate to form a naturally occurring mosaic-like nanostructure having two-dimensional features with air gaps between the two-dimensional features. Due to the unique deposition nanostructure, plasmonic thin films of metal or highly conducting materials can be produced on any substrate, including fabrics and biological materials. In addition, these plasmonic materials can be used in conjunction with geometric patterns that may be used to create multiple resonance plasmonic metamaterials.Type: ApplicationFiled: March 5, 2013Publication date: September 26, 2013Inventors: Orest J. Glembocki, Sharka M. Prokes, Joshua D. Caldwell, Mikko Ritala, Markku Leskela, Jaakko Niinisto, Eero Santala, Timo Hatanpaa, Maarit Kariemi
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Publication number: 20120273662Abstract: A plasmonic grating sensor having periodic arrays of vertically aligned plasmonic nanopillars, nanowires, or both with an interparticle pitch ranging from ?/8?2?, where ? is the incident wavelength of light divided by the effective index of refraction of the sample; a coupled-plasmonic array sensor having vertically aligned periodic arrays of plasmonically coupled nanopillars, nanowires, or both with interparticle gaps sufficient to induce overlap between the plasmonic evanescent fields from neighboring nanoparticles, typically requiring edge-to-edge separations of less than 20 nm; and a plasmo-photonic array sensor having a double-resonant, periodic array of vertically aligned subarrays of 1 to 25 plasmonically coupled nanopillars, nanowires, or both where the subarrays are periodically spaced at a pitch on the order of a wavelength of light.Type: ApplicationFiled: April 26, 2012Publication date: November 1, 2012Inventors: Joshua D. Caldwell, Orest J. Glembocki, Sharka M. Prokes, Ronald W. Rendell
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Patent number: 8235537Abstract: An article having: a retroreflective optical element and a plasmonic material on the optical element. A method of: performing an optical measurement on a substrate having a plurality of the articles.Type: GrantFiled: August 28, 2008Date of Patent: August 7, 2012Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Orest J Glembocki, Francis J Kub, Sharka M Prokes
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Patent number: 7915143Abstract: A method of reversing Shockley stacking fault expansion includes providing a bipolar or a unipolar SiC device exhibiting forward voltage drift caused by Shockley stacking fault nucleation and expansion. The SiC device is heated to a temperature above 150° C. A current is passed via forward bias operation through the SiC device sufficient to induce at least a partial recovery of the forward bias drift.Type: GrantFiled: April 30, 2009Date of Patent: March 29, 2011Assignee: The United States of America as represented by the Secretary of the NavyInventors: Joshua D. Caldwell, Robert E Stahlbush, Karl D Hobart, Marko J Tadjer, Orest J Glembocki
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Patent number: 7639356Abstract: An apparatus comprising a substrate and at least two nanowires on the substrate, the nanowires comprising a core and a metal shell, wherein the core is selected from the group consisting of a semiconductor and a dielectric, thereby forming a nanowire-composite to allow plasmon coupling for enhancements of the electric fields and enhancements of the surface enhanced Raman signal (SERS) and enhancements of the chemical or biological specificity and sensitivity. A method of making a SERS-active substrate comprising providing a substrate and affixing a plurality of nanowires on the substrate thereby forming a nano-composite, creating plasmon coupling leading to enhanced electric fields in the vicinity of the nanowires and enhancements of the surface enhanced Raman signal (SERS) and enhancements of the chemical or biological specificity and sensitivity.Type: GrantFiled: April 8, 2008Date of Patent: December 29, 2009Assignee: The United States of America as represented by the Secretary of the NavyInventors: Sharka M. Prokes, Orest J. Glembocki
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Publication number: 20090273390Abstract: A method of reversing Shockley stacking fault expansion includes providing a bipolar or a unipolar SiC device exhibiting forward voltage drift caused by Shockley stacking fault nucleation and expansion. The SiC device is heated to a temperature above 150° C. A current is passed via forward bias operation through the SiC device sufficient to induce at least a partial recovery of the forward bias drift.Type: ApplicationFiled: April 30, 2009Publication date: November 5, 2009Inventors: JOSHUA D. CALDWELL, Robert E. Stahlbush, Karl D. Hobart, Marko J. Tadjer, Orest J. Glembocki