Patents by Inventor Ori Shoval

Ori Shoval has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CD-SEM technique for wafers fabrication control
    Patent number: 9824852
    Abstract: A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: November 21, 2017
    Assignee: Applied Materials Israel Ltd
    Inventors: Roman Kris, Yakov Weinberg, Yan Ivanchenko, Ishai Schwarzband, Dan Lange, Arbel Englander, Efrat Noifeld, Ran Goldman, Ori Shoval
  • CD-SEM TECHNIQUE FOR WAFERS FABRICATION CONTROL
    Publication number: 20170194125
    Abstract: A Critical Dimensions Scanning Electron Microscope (CD-SEM) is described that comprises a unit for performing CD-SEM measurements of a semiconductor wafer, a BSE imaging unit for obtaining a Grey Level image (GL) of the wafer, and a unit for GL analysis and for processing the GL analysis results with reference to results of the CD-measurements.
    Type: Application
    Filed: December 31, 2015
    Publication date: July 6, 2017
    Inventors: Roman KRIS, Yakov WEINBERG, Yan IVANCHENKO, Ishai SCHWARZBAND, Dan LANGE, Arbel ENGLANDER, Efrat NOIFELD, Ran GOLDMAN, Ori SHOVAL
  • High electron energy based overlay error measurement methods and systems
    Patent number: 9046475
    Abstract: A method, a system and a computer readable medium are provided. The method may include obtaining or receiving first area information representative of a first area of a first layer of an inspected object; wherein the inspected object further comprises a second layer that comprises a second area; wherein the second layer is buried under the first layer; directing electrons of a primary electron beam to interact with the first area; directing electrons of the primary electron beam to interact with the second area; generating detection signals responsive to electrons that were scattered or reflected from at least one of the first and second areas; and determining at least one spatial relationship between at least one feature of the first area and at least one feature of the second area based on the detection signals and on the first area information.
    Type: Grant
    Filed: May 19, 2011
    Date of Patent: June 2, 2015
    Assignee: APPLIED MATERIALS ISRAEL, LTD.
    Inventors: Moshe Langer, Ofer Adan, Ram Peltinov, Yoram Uziel, Ori Shoval
  • HIGH ELECTRON ENERGY BASED OVERLAY ERROR MEASUREMENT METHODS AND SYSTEMS
    Publication number: 20120292502
    Abstract: A method, a system and a computer readable medium are provided. The method may include obtaining or receiving first area information representative of a first area of a first layer of an inspected object; wherein the inspected object further comprises a second layer that comprises a second area; wherein the second layer is buried under the first layer; directing electrons of a primary electron beam to interact with the first area; directing electrons of the primary electron beam to interact with the second area; generating detection signals responsive to electrons that were scattered or reflected from at least one of the first and second areas; and determining at least one spatial relationship between at least one feature of the first area and at least one feature of the second area based on the detection signals and on the first area information.
    Type: Application
    Filed: May 19, 2011
    Publication date: November 22, 2012
    Inventors: Moshe Langer, Ofer Adan, Ram Peltinov, Yoram Uziel, Ori Shoval