Patents by Inventor Orlando Auciello
Orlando Auciello has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130225906Abstract: This invention relates to a material for medical use that comprises biocompatible nanoparticles having superparamagnetic properties, where the superparamagnetic properties of said nanoparticles are used to localize their action on a determined space or tissue. In particular, said nanoparticles having superparamagnetic properties are composed of magnetite. The material according to the invention has various applications, both in surgical and in therapeutic treatments.Type: ApplicationFiled: September 9, 2011Publication date: August 29, 2013Applicant: NANOPHTHALMICS, LLCInventors: Roberto Zysler, Alejandro Berra, Pablo Gurman, Orlando Auciello, Mario Joaquin Saravia
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Patent number: 7791201Abstract: A device including a layered heterostructure with an oxygen-containing material, with a carbon layer and an amorphous oxygen diffusion barrier protecting the carbon layer from etching by oxygen. One or more of a metal, a carbide or an oxide may be in contact with the amorphous oxygen diffusion barrier that has the lowest free energy of oxide formation in the device. Various devices are disclosed as are varieties of carbon allotropes. Methods of protecting carbon, such as diamond from the oxygen etching in processes such as device manufacture are also disclosed.Type: GrantFiled: November 30, 2006Date of Patent: September 7, 2010Assignee: UChicago Argonne, LLCInventors: Orlando Auciello, John Carlisle, Jennifer Gerbi, James Birrell
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Patent number: 7714405Abstract: A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.Type: GrantFiled: March 3, 2005Date of Patent: May 11, 2010Assignee: UChicago Argonne, LLCInventor: Orlando Auciello
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Patent number: 7556982Abstract: A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500° C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 1010sites/cm2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500° C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500° C.-4 hours or less onto a variety of substrates such as MEMS devices.Type: GrantFiled: July 15, 2004Date of Patent: July 7, 2009Assignee: UChicago Argonne, LLCInventors: John A. Carlisle, Dieter M. Gruen, Orlando Auciello, Xingcheng Xiao
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Publication number: 20080246368Abstract: A device including a layered heterostructure with an oxygen-containing material, with a carbon layer and an amorphous oxygen diffusion barrier protecting the carbon layer from etching by oxygen. One or more of a metal, a carbide or an oxide may be in contact with the amorphous oxygen diffusion barrier that has the lowest free energy of oxide formation in the device. Various devices are disclosed as are varieties of carbon allotropes. Methods of protecting carbon, such as diamond from the oxygen etching in processes such as device manufacture are also disclosed.Type: ApplicationFiled: November 30, 2006Publication date: October 9, 2008Applicant: UChicago Argonne, LLCInventors: Orlando Auciello, John Carlisle, Jennifer Gerbi, James Birrell
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Publication number: 20070257265Abstract: Extremely smooth (6 nm roughness) and continuous ultrananocrystalline diamond (UNCD) thin films were achieved by microwave plasma chemical vapor deposition using a thin 10 nm tungsten (W) interlayer between the silicon (Si) substrate and the diamond film. The W interlayer significantly increased the initial UNCD nucleation density to >1012 sites/cm2, thereby lowering the surface roughness and eliminating interfacial voids. A method is also disclosed to make various articles.Type: ApplicationFiled: May 3, 2006Publication date: November 8, 2007Applicant: The University of ChicagoInventors: Nevin Naguib, James Birrell, Jeffrey Elam, John Carlisle, Orlando Auciello
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Publication number: 20070040195Abstract: A bio-compatible electrical element including a high-dielectric amorphous TixAl1-xOy oxide alloy wherein a TiO2 layer is between the bio-compatible electrical element and a biological such as human environment. A continuous and substantially pinhole free dielectric amorphous TixAl1-xOy oxide alloy wherein x is in the range of from about 0.5 to about 0.7 and y is in the range of about 2 to about 3 and having a TiO2 layer exterior thereto formed into a passive element such as a capacitor or an active element such as a microchip is disclosed.Type: ApplicationFiled: August 19, 2005Publication date: February 22, 2007Applicant: The University of ChicagoInventor: Orlando Auciello
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Patent number: 7128889Abstract: An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.Type: GrantFiled: May 13, 2004Date of Patent: October 31, 2006Inventors: John A. Carlisle, Orlando Auciello, James Birrell
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Publication number: 20060222850Abstract: A material of carbon nanotubes and diamond bonded together. A method of producing carbon nanotubes and diamond covalently bonded together is disclosed with a substrate on which is deposited nanoparticles of a suitable catalyst on a surface of the substrate. A diamond seeding material is deposited on the surface of the substrate, and then the substrate is exposed to a hydrogen poor plasma for a time sufficient to grow carbon nanotubes and diamond covalently bonded together.Type: ApplicationFiled: April 1, 2005Publication date: October 5, 2006Applicant: The University of ChicagoInventors: Xingcheng Xiao, John Carlisle, Orlando Auciello, Jeffrey Elam, Dieter Gruen
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Publication number: 20060199740Abstract: A layered device including a substrate; an adhering layer thereon. An electrical conducting layer such as copper is deposited on the adhering layer and then a barrier layer of an amorphous oxide of TiAl followed by a high dielectric layer are deposited to form one or more of an electrical device such as a capacitor or a transistor or MEMS and/or a magnetic device.Type: ApplicationFiled: March 3, 2005Publication date: September 7, 2006Inventor: Orlando Auciello
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Publication number: 20060127300Abstract: An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.Type: ApplicationFiled: February 8, 2006Publication date: June 15, 2006Applicant: The University of ChicagoInventors: John Carlisle, Orlando Auciello, James Birrell
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Publication number: 20050042161Abstract: An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.Type: ApplicationFiled: May 13, 2004Publication date: February 24, 2005Applicant: The University of ChicagoInventors: John Carlisle, Orlando Auciello, James Birrell
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Publication number: 20050031785Abstract: A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500° C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 1010sites/cm2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500° C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500° C.-4 hours or less onto a variety of substrates such as MEMS devices.Type: ApplicationFiled: July 15, 2004Publication date: February 10, 2005Applicant: The University of ChicagoInventors: John Carlisle, Dieter Gruen, Orlando Auciello, Xingcheng Xiao
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Patent number: 6811612Abstract: MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron . The MEMS structures are made by contacting carbon dimer species with an oxide substrate forming a carbide layer on the surface onto which ultrananocrystalline diamond having average grain sizes of less than about 10 nm is deposited. Thereafter, microfabrication process are used to form a structure of predetermined shape having a feature resolution of less than about one micron.Type: GrantFiled: November 8, 2002Date of Patent: November 2, 2004Assignee: The University of ChicagoInventors: Dieter M. Gruen, Hans-Gerd Busmann, Eva-Maria Meyer, Orlando Auciello, Alan R. Krauss
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Publication number: 20040129202Abstract: MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron. The MEMS structures are made by contacting carbon dimer species with an oxide substrate forming a carbide layer on the surface onto which ultrananocrystalline diamond having average grain sizes of less than about 10 nm is deposited. Thereafter, microfabrication process are used to form a structure of predetermined shape having a feature resolution of less than about one micron.Type: ApplicationFiled: November 8, 2002Publication date: July 8, 2004Inventors: Dieter M. Gruen, Hans-Gerd Busmann, Eva-Maria Meyer, Orlando Auciello, Alan R. Krauss, Julie R. Krauss
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Patent number: 6613601Abstract: An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/V2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined.Type: GrantFiled: May 9, 2002Date of Patent: September 2, 2003Assignee: The University of ChicagoInventors: Alan R. Krauss, Dieter M. Gruen, Michael J. Pellin, Orlando Auciello
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Patent number: 6447851Abstract: A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between −100V and −200 are preferred. Carbon sources may be one or more of CH4, C2H2 other hydrocarbons and fullerenes.Type: GrantFiled: July 14, 1999Date of Patent: September 10, 2002Assignee: The University of ChicagoInventors: Dieter M. Gruen, Alan R. Krauss, Ming Q. Ding, Orlando Auciello
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Patent number: 6422077Abstract: An ultrananocrystalline diamond (UNCD) element formed in a cantilever configuration is used in a highly sensitive, ultra-small sensor for measuring acceleration, shock, vibration and static pressure over a wide dynamic range. The cantilever UNCD element may be used in combination with a single anode, with measurements made either optically or by capacitance. In another embodiment, the cantilever UNCD element is disposed between two anodes, with DC voltages applied to the two anodes. With a small AC modulated voltage applied to the UNCD cantilever element and because of the symmetry of the applied voltage and the anode-cathode gap distance in the Fowler-Nordheim equation, any change in the anode voltage ratio V1/N2 required to maintain a specified current ratio precisely matches any displacement of the UNCD cantilever element from equilibrium. By measuring changes in the anode voltage ratio required to maintain a specified current ratio, the deflection of the UNCD cantilever can be precisely determined.Type: GrantFiled: April 6, 2000Date of Patent: July 23, 2002Assignee: The University of ChicagoInventors: Alan R. Krauss, Dieter M. Gruen, Michael J. Pellin, Orlando Auciello
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Publication number: 20020048638Abstract: A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between −100V and −200 are preferred. Carbon sources may be one or more of CH4, C2H2 other hydrocarbons and fullerenes.Type: ApplicationFiled: July 14, 1999Publication date: April 25, 2002Inventors: DIETER M. GRUEN, ALAN R. KRAUSS, M. Q. DING, ORLANDO AUCIELLO
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Patent number: 4923585Abstract: Ion beam sputter-induced deposition using a single ion beam and a multicomponent target is capable of reproducibly producing thin films of arbitrary composition, including those which are close to stoichiometry. Using a quartz crystal deposition monitor and a computer controlled, well-focused ion beam, this sputter-deposition approach is capable of producing metal oxide superconductors and semiconductors of the superlattice type such as GaAs-AlGaAs as well as layered metal/oxide/semiconductor/superconductor structures. By programming the dwell time for each target according to the known sputtering yield and desired layer thickness for each material, it is possible to deposit composite films from a well-controlled sub-monolayer up to thicknesses determined only by the available deposition time. In one embodiment, an ion beam is sequentially directed via a set of X-Y electrostatic deflection plates onto three or more different element or compound targets which are constituents of the desired film.Type: GrantFiled: November 2, 1988Date of Patent: May 8, 1990Assignee: Arch Development CorporationInventors: Alan R. Krauss, Orlando Auciello