Patents by Inventor Orlando H. Auciello
Orlando H. Auciello has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9269519Abstract: An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.Type: GrantFiled: June 5, 2015Date of Patent: February 23, 2016Assignee: UChicago Argonne, LLCInventors: Anirudha V. Sumant, Orlando H. Auciello, Derrick C. Mancini
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Patent number: 9196905Abstract: A composite electrode and a lithium-based battery are disclosed, wherein the composite electrode comprises: a substrate and a conductive layer formed on the substrate, wherein the conductive layer comprises graphite powders, Si-based powders, Ti-based powders, or a combination thereof embedded in a conductive matrix and coated with diamond films, and the diamond films are formed of diamond grains. The novel electrodes of the present invention when used in the Li-based battery can provide superior performance including excellent chemical inertness, physical integrity, and charge-discharge cycling life-time, and exhibit high electric conductivity and excellent lithium ion permeability.Type: GrantFiled: January 27, 2014Date of Patent: November 24, 2015Assignee: NATIONAL CHENG KUNG UNIVERSITYInventors: Yonhua Tzeng, Orlando H Auciello, Chuan-Pu Liu, Chi-Kai Lin, Yin-Wei Cheng
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Publication number: 20150311022Abstract: An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.Type: ApplicationFiled: June 5, 2015Publication date: October 29, 2015Applicant: UChicago Argonne, LLCInventors: Anirudha V. Sumant, Orlando H. Auciello, Derrick C. Mancini
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Patent number: 8963659Abstract: The present invention provides for an electrostatic microelectromechanical (MEMS) device comprising a dielectric layer separating a first conductor and a second conductor. The first conductor is moveable towards the second conductor, when a voltage is applied to the MEMS device. The dielectric layer recovers from dielectric charging failure almost immediately upon removal of the voltage from the MEMS device.Type: GrantFiled: May 24, 2011Date of Patent: February 24, 2015Inventors: Charles L. Goldsmith, Orlando H. Auciello, Anirudha V. Sumant, Derrick C. Mancini, Chris Gudeman, Suresh Sampath, John A. Carlilse, Robert W. Carpick, James Hwang
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Patent number: 8834757Abstract: The invention provides a method for producing bioinert biocompatible diamond particles/polymer composites or any other matrix (e.g. glass, metal, plastic, ceramic and more)/diamond particle composites, even if not biocompatible with outstanding mechanical, tribological, and biological properties, the method comprising selecting a polymer having a melting temperature below about 300 C; mixing diamond particles with the polymer to form a liquid mixture, poring the liquid diamond particle/polymer or any other diamond particle/matrix composite in liquid form into a mold and then causing the composite to sinter with the diamond particles densely and uniformly distributed through the bulk and surface of the composite, such that the diamond particles distributed on the surface can form a diamond layer covering the surface.Type: GrantFiled: September 30, 2011Date of Patent: September 16, 2014Assignee: UChicago Argonne, LLCInventors: Orlando H. Auciello, Pablo Gurman, Alejandro Berra
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Publication number: 20140212763Abstract: A composite electrode and a lithium-based battery are disclosed, wherein the composite electrode comprises: a substrate and a conductive layer formed on the substrate, wherein the conductive layer comprises graphite powders, Si-based powders, Ti-based powders, or a combination thereof embedded in a conductive matrix and coated with diamond films, and the diamond films are formed of diamond grains. The novel electrodes of the present invention when used in the Li-based battery can provide superior performance including excellent chemical inertness, physical integrity, and charge-discharge cycling life-time, and exhibit high electric conductivity and excellent lithium ion permeability.Type: ApplicationFiled: January 27, 2014Publication date: July 31, 2014Applicant: National Cheng Kung UniversityInventors: Yonhua TZENG, Orlando H AUCIELLO, Chuan-Pu LIU, Chi-Kai LIN, Yin-Wei CHENG
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Publication number: 20130264680Abstract: The invention relates generally to a nanolaminate structure involving Al2O3 thin films as a main component. The nanolaminate is used between a top electrode and a bottom electode to form a capacitor. The naonolaminate layer comprises alternating layers of Al2O3 and TiO2 and an interfacial layer.Type: ApplicationFiled: April 5, 2012Publication date: October 10, 2013Inventors: Orlando H. AUCIELLO, Bo-Kuai LAI, Geunhee LEE, Ram S. KATIYAR
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Patent number: 8525185Abstract: A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a “fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.Type: GrantFiled: April 7, 2011Date of Patent: September 3, 2013Assignee: UChicago Argonne, LLCInventors: Charles L. Goldsmith, Orlando H. Auciello, John A. Carlisle, Suresh Sampath, Anirudha V. Sumant, Robert W. Carpick, James Hwang, Derrick C. Mancini, Chris Gudeman
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Patent number: 8424175Abstract: A process for fabricating a piezoactuated storage device having a tip array and a memory media, which includes but is not limited to: etching the regions on the surface of the silicon wafer to produce substantially pyramidal etch pits by anisotropic etching or chemical etching with potassium hydroxide (KOH); growing an oxide layer on a top surface of the silicon wafer and in the substantially pyramidal etch pits to produce oxidation sharpening of the substantially pyramidal etch pits; forming an array of conductive tips of a nanocarbon film of nanostructured carbon material by deposition, wherein the nanostructured carbon material is ultrananocrystalline diamond (UNCD), ta-C, or diamond-like carbon films; and forming an oxygen diffusion barrier layer by deposition of a TiAl, TaAl, or any other oxygen diffusion barrier layer material on the nanocarbon film.Type: GrantFiled: September 10, 2009Date of Patent: April 23, 2013Assignee: UChicago Argonne, LLCInventor: Orlando H. Auciello
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Publication number: 20130084420Abstract: The invention provides a method for producing bioinert biocompatible diamond particles/polymer composites or any other matrix (e.g. glass, metal, plastic, ceramic and more)/diamond particle composites, even if not biocompatible with outstanding mechanical, tribological, and biological properties, the method comprising selecting a polymer having a melting temperature below about 300 C; mixing diamond particles with the polymer to form a liquid mixture, poring the liquid diamond particle/polymer or any other diamond particle/matrix composite in liquid form into a mold and then causing the composite to sinter with the diamond particles densely and uniformly distributed through the bulk and surface of the composite, such that the diamond particles distributed on the surface can form a diamond layer covering the surface.Type: ApplicationFiled: September 30, 2011Publication date: April 4, 2013Applicant: UCHICAGO ARGONNE, LLCInventors: Orlando H. Auciello, Pablo Gurman, Alejandro Berra
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Patent number: 8354290Abstract: An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.Type: GrantFiled: April 5, 2011Date of Patent: January 15, 2013Assignee: UChicago Argonne, LLCInventors: Anirudha V. Sumant, Orlando H. Auciello, Derrick C. Mancini
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Publication number: 20130000764Abstract: A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.Type: ApplicationFiled: February 24, 2009Publication date: January 3, 2013Applicant: UChicago Argonne, LLCInventors: Hao Li, Leonidas E. Ocola, Orlando H. Auciello, Millicent A. Firestone
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Patent number: 8343425Abstract: A user-friendly multi-layer micro/nanofluidic flow device and micro/nano fabrication process are provided for numerous uses. The multi-layer micro/nanofluidic flow device can comprise: a substrate, such as indium tin oxide coated glass (ITO glass); a conductive layer of ferroelectric material, preferably comprising a PZT layer of lead zirconate titanate (PZT) positioned on the substrate; electrodes connected to the conductive layer; a nanofluidics layer positioned on the conductive layer and defining nanochannels; a microfluidics layer positioned upon the nanofluidics layer and defining microchannels; and biomolecular nanovalves providing bio-nanovalves which are moveable from a closed position to an open position to control fluid flow at a nanoscale.Type: GrantFiled: February 24, 2009Date of Patent: January 1, 2013Assignee: UChicago Argonne, LLCInventors: Hao Li, Leonidas E. Ocola, Orlando H. Auciello, Millicent A. Firestone
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Publication number: 20120193685Abstract: A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a “fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.Type: ApplicationFiled: April 7, 2011Publication date: August 2, 2012Applicant: UChicago Argonne, LLCInventors: Charles L. Goldsmith, Orlando H. Auciello, John A. Carlisle, Suresh Sampath, Anirudha V. Sumant, Robert W. Carpick, James Hwang, Derrick C. Mancini, Chris Gudeman
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Publication number: 20120193684Abstract: An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.Type: ApplicationFiled: April 5, 2011Publication date: August 2, 2012Applicant: UChicago Argonne, LLCInventors: Anirudha V. Sumant, Orlando H. Auciello, Derrick C. Mancini
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Publication number: 20100055806Abstract: A compact large density memory piezoactuated storage device and process for its fabrication provides an integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure that features an integrated large density array of nanotips made of wear-resistant conductive ultrananocrystalline diamond (UNCD) in which the tips are actuated via a piezoelectric thin film integrated with the UNCD tips. The tips of the special piezoactuated storage device effectively contact an underlying metal layer (top electrode) deposited on a polarizable ferroelectric layer that is grown on top of another metal layer (bottom electrode) to form a ferroelectric capacitor. Information is imprinted in the ferroelectric layer by the polarization induced by the application of a voltage pulse between the top and bottom electrodes through the conductive UNCD tips.Type: ApplicationFiled: September 10, 2009Publication date: March 4, 2010Inventor: Orlando H. Auciello
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Patent number: 7602105Abstract: A compact large density memory piezoactuated storage device and process for its fabrication provides an integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure that features an integrated large density array of nanotips made of wear-resistant conductive ultrananocrystalline diamond (UNCD) in which the tips are actuated via a piezoelectric thin film integrated with the UNCD tips. The tips of the special piezoactuated storage device effectively contact an underlying metal layer (top electrode) deposited on a polarizable ferroelectric layer that is grown on top of another metal layer (bottom electrode) to form a ferroelectric capacitor. Information is imprinted in the ferroelectric layer by the polarization induced by the application of a voltage pulse between the top and bottom electrodes through the conductive UNCD tips.Type: GrantFiled: April 24, 2007Date of Patent: October 13, 2009Assignee: UChicago Argonne, LLCInventor: Orlando H. Auciello
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Publication number: 20080266930Abstract: A compact large density memory piezoactuated storage device and process for its fabrication provides an integrated microelectromechanical (MEMS) and/or nanoelectromechanical (NEMS) system and structure that features an integrated large density array of nanotips made of wear-resistant conductive ultrananocrystalline diamond (UNCD) in which the tips are actuated via a piezoelectric thin film integrated with the UNCD tips. The tips of the special piezoactuated storage device effectively contact an underlying metal layer (top electrode) deposited on a polarizable ferroelectric layer that is grown on top of another metal layer (bottom electrode) to form a ferroelectric capacitor. Information is imprinted in the ferroelectric layer by the polarization induced by the application of a voltage pulse between the top and bottom electrodes through the conductive UNCD tips.Type: ApplicationFiled: April 24, 2007Publication date: October 30, 2008Applicant: UChicago Argonne, LLCInventor: Orlando H. Auciello
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Publication number: 20080204970Abstract: A ferroelectric capacitor structure having a lattice matched lanthanide oxide film intervening layer for providing a high polarization state. The capacitor structure includes a glass substrate, a transparent electrode layer disposed on the glass substrate, a lanthanide oxide film disposed on the transparent layer and a ferroelectric perovskite layer disposed on the lanthanide oxide film. The claim also encompases semi-transparent applications where one conductive electrode (top or bottom) is not transparent.Type: ApplicationFiled: February 28, 2007Publication date: August 28, 2008Inventors: Leonidas E. Ocola, Krishna K. Uprety, Orlando H. Auciello
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Publication number: 20070220959Abstract: A monolithically integrated 3-D membrane or diaphragm/tip (called 3-D tip) of substantially all UNCD having a tip with a radius of about less than 50 nm capable of measuring forces in all three dimensions or being used as single tips or in large arrays for imprint of data on memory media, fabrication of nanodots of different materials on different substrates and many other uses such as nanolithography production of nanodots of biomaterials on substrates, etc. A method of molding UNCD is disclosed including providing a substrate with a predetermined pattern and depositing an oxide layer prior to depositing a carbide-forming metallic seed layer, followed by seeding with diamond nano or micropowder in solvent suspension, or mechanically polishing with diamond powder, or any other seeding method, followed by UNCD film growth conforming to the predetermined pattern.Type: ApplicationFiled: October 4, 2006Publication date: September 27, 2007Applicant: UChicago Argonne LLCInventors: Anirudha V. Sumant, Robert W. Carpick, Orlando H. Auciello, John A. Carlisle