Abstract: Method and apparatus for image compression while maintaining high resolution in selected areas within the image. An acquired image is represented by a two dimensional array of M×N pixels. The array is divided into blocks of identical rectangular areas, each of which containing A×B pixels wherein A<M,N and B<M,N and M=m*A (m=2,3, . . . ); N=n*B (n=2,3, . . . ). Data related to the division of the array into blocks is stored and a threshold level of pixel attribute value is determined. The average attribute value of each block is calculated and stored. The average attribute value of each block is compared to the average attribute value of its adjacent blocks.

Abstract: An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node.

Abstract: Method and apparatus for expanding the dynamic range of an optical imager, comprising individually controlling the integration time of each pixel of a sensor array, and providing a corresponding scaling factor for the electrical output of each individual pixel during the frame time. The integration time of each pixel is controlled as a function of light intensity received by each individual pixel, by resetting the pixel after a predetermined threshold for the output signal, has been reached.

Abstract: An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node.

Abstract: A wide dynamic range image sensor provides individual pixel reset to vary the integration time of individual pixels. The integration time of each pixel is controlled by column and row reset control signals which activate a logical reset transistor only when both signals coincide for a given pixel.

Abstract: Designs and operational methods to increase the dynamic range of image sensors and APS devices in particular by achieving more than one integration times for each pixel thereof. An APS system with more than one column-parallel signal chains for readout are described for maintaining a high frame rate in readout. Each active pixel is sampled for multiple times during a single frame readout, thus resulting in multiple integration times. The operation methods can also be used to obtain multiple integration times for each pixel with an APS design having a single column-parallel signal chain for readout. Furthermore, analog-to-digital conversion of high speed and high resolution can be implemented.