Abstract: LTCC devices are produced from dielectric compositions include a mixture of precursor materials that, upon firing, forms a dielectric material having a magnesium-silicon oxide host. An associated Ag system for LTCC conductors is also described.

Abstract: A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950° C. or below 1100° C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt % or 10-99 wt % silica powder and 5-90 wt % or 1-90 wt % glass component. The glass component includes 50-90 mole % SiO2, 5-35 mole % or 0.1-35 mole % B2O3, 0.1-10 mole % or 0.1-25 mole % Al2O3, 0.1-10 mole % K2O, 0.1-10 mole % Na2O, 0.1-20 mole % Li2O, 0.1-30 mole % F. The total amount of Li2O+Na2O+K2O is 0.1-30 mole % of the glass component. The silica powder can be amorphous or crystalline.

Abstract: A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950° C. or below 1100° C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt % or 10-99 wt % silica powder and 5-90 wt % or 1-90 wt % glass component. The glass component includes 50-90 mole % SiO2, 5-35 mole % or 0.1-35 mole % B2O3, 0.1-10 mole % or 0.1-25 mole % Al2O3, 0.1-10 mole % K2O, 0.1-10 mole % Na2O, 0.1-20 mole % Li2O, 0.1-30 mole % F. The total amount of Li2O+Na2O+K2O is 0.1-30 mole % of the glass component. The silica powder can be amorphous or crystalline.

Abstract: LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a matrix of titanates of alkaline earth metals, the matrix doped with at least one selected from rare-earth element, aluminum oxide, silicon oxide and bismuth oxide.

Abstract: High thermal conductivity dielectric materials systems or pastes are useful on aluminum alloy substrates for LED and high power circuitry applications.

Abstract: LTCC devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a matrix of titanates of alkaline earth metals, the matrix doped with at least one selected from rare-earth element, aluminum oxide, silicon oxide and bismuth oxide.

Abstract: High thermal conductivity dielectric materials systems or pastes are useful on aluminum alloy substrates for LED and high power circuitry applications.

Abstract: Thick film conductive copper pastes that are lead-free and cadmium-free. The inventive copper pastes possess desirable characteristics, including good solderability, good wire bondability, a low firing temperature, and a wide temperature processing window, and provide excellent adhesion to a variety of substrates, including alumina and glass coated stainless steel substrates, as well as low resistivity, and a microstructure after firing that is dense and substantially free of pores.

Abstract: Glass frits containing lithium are used in thick film palladium-silver compositions which after firing result in conductors or resistors that exhibit very low resistivity and TCR.

Abstract: A system of two thick film pastes containing gold, in which the first paste is deposited directly onto a substrate, and the second is deposited directly onto the first, contain Cr.sub.2 O.sub.3 and Bi.sub.2 O.sub.3, which enhance the adhesion to the substrate of the first deposited paste and the solderability of the second deposited paste.

Abstract: A vehicle system for thick film electrically functional inks comprises esters of tall oil fatty acids substituted for 1-90% of the typical organic solvent.

Abstract: Power surge resistor pastes comprising palladium/silver, glass and dopant(s) are described for use in the manufacture of power surge resistor devices employed for power surge protection applications. The resultant surge resistors are characterized in their ability to dissipate repeated voltage surges equal in voltage and duration to surges created by lightning with less than 0.05% change in sheet resistance.

Abstract: Power surge resistor containing palladium/silver, glass and dopant(s) are described for use in the manufacture of power surge resistor devices employed for power surge protection applications. The resultant surge resistors are characterized in their ability to dissipate repeated voltage surges equal in voltage and duration to surges created by lightning with less than 0.05% change in sheet resistance.