Abstract: A method includes depositing a layer of silicon oxide onto a layer of silicon carbide; ion implanting the layer of silicon carbide, annealing the ion implanted layer of silicon carbide to produce defects within the layer of silicon carbide, performing photolithography using a mask layer on regions of the layer of silicon carbide to define regions for electrode deposition, removing the layer of silicon oxide from the layer of silicon carbide in the one or more regions for electrode deposition, forming one or more electrodes by depositing indium tin oxide (ITO) in each of the regions for electrode deposition, performing a first lift-off operation to remove the mask layer surrounding the electrodes, depositing a passivation and gate silicon oxide layer on top of the layer of silicon carbide and the electrodes, and performing a second lift-off operation to fabricate an optically transparent ITO gate between the electrodes.

Abstract: A device includes a converter configured to convert photons input from a photonic link into Cooper-pairs, a first superconductor, a second superconductor, a plurality of nanowires connected to the first superconductor and the second superconductor, and a gate array connected to the plurality of nanowires and configured to alter quantum states of ions within the plurality of nanowires.

Abstract: A system and method involve generating an electric field across a superconductor device having an ionic layer disposed between and separated from first and second superconductor layers by respective first and second barrier layers. The electric field may be generated by applying an input signal, such as a voltage, to the superconductor device while the device is in a superconducting state. The voltage may be below a threshold voltage for inducing ion transport within the ionic layer or may be above or below a threshold voltage for inducing ion transport from the ionic layer across an ionic layer/barrier layer interface. The ion transport may tune the potential profile and/or modulate the critical current of the superconductor device and may include quantum coherent ionic transport, Josephson tunneling, or resonant tunneling. The electric field generated across the superconductor device may alter the spin-states of the ions within the ionic layer.