Patents by Inventor Osama Tobail
Osama Tobail has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10297709Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.Type: GrantFiled: May 17, 2016Date of Patent: May 21, 2019Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, EGYPT NANOTECHNOLOGY CENTERInventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail
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Patent number: 10283668Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.Type: GrantFiled: August 5, 2016Date of Patent: May 7, 2019Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, EGYPT NANOTECHNOLOGY CENTERInventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail
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Publication number: 20160343899Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.Type: ApplicationFiled: August 5, 2016Publication date: November 24, 2016Inventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail
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Publication number: 20160260859Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.Type: ApplicationFiled: May 17, 2016Publication date: September 8, 2016Inventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail
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Patent number: 9331330Abstract: An electrode includes a conductive substrate and a plurality of conductive structures providing a compressible matrix of material. An active material is formed in contact with the plurality of conductive structures. The active material includes a volumetrically expanding material which expands during ion diffusion such that the plurality of conductive structures provides support for the active material and compensates for volumetric expansion of the active material to prevent damage to the active material.Type: GrantFiled: November 22, 2011Date of Patent: May 3, 2016Assignees: International Business Machines Corporation, Egypt Nanotechnology Center (EGNC)Inventors: Mostafa M. El-Ashry, Osama Tobail, George S. Tulevski
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Patent number: 8828504Abstract: A hydrogenated thin film is formed in a controlled vacuum on a substrate by evaporating one or more solid materials and passing the resulting vapor and a hydrogen-containing gas into a space between two electrodes. One of the electrodes includes openings for allowing the vapor to enter the space. Plasma is generated within the space to cause dissociation of the hydrogen-containing gas and promote a reaction between the material(s) and hydrogen-containing gas.Type: GrantFiled: December 17, 2010Date of Patent: September 9, 2014Assignee: International Business Machines CorporationInventors: Osama Tobail, Ahmed Abou-Kandil, Mostafa M. El-Ashry, Jeehwan Kim, Paul M. Kozlowski, Mohamed Saad, Devendra K. Sadana
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Publication number: 20140196780Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.Type: ApplicationFiled: March 18, 2014Publication date: July 17, 2014Applicants: EGYPT NANOTECHNOLOGY CENTER, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail
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Publication number: 20130130077Abstract: An electrode includes a conductive substrate and a plurality of conductive structures providing a compressible matrix of material. An active material is formed in contact with the plurality of conductive structures. The active material includes a volumetrically expanding material which expands during ion diffusion such that the plurality of conductive structures provides support for the active material and compensates for volumetric expansion of the active material to prevent damage to the active material.Type: ApplicationFiled: November 22, 2011Publication date: May 23, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: MOSTAFA M. EL-ASHRY, Osama Tobail, George S. Tulevski
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Publication number: 20120156393Abstract: A hydrogenated thin film is formed in a controlled vacuum on a substrate by evaporating one or more solid materials and passing the resulting vapor and a hydrogen-containing gas into a space between two electrodes. One of the electrodes includes openings for allowing the vapor to enter the space. Plasma is generated within the space to cause dissociation of the hydrogen-containing gas and promote a reaction between the material(s) and hydrogen-containing gas.Type: ApplicationFiled: December 17, 2010Publication date: June 21, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Osama Tobail, Ahmed Abou-Kandil, Mostafa M. El-Ashry, Jeehwan Kim, Paul M. Kozlowski, Mohamed Saad, Devendra K. Sadana
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Publication number: 20120031477Abstract: A Schottky-barrier-reducing layer is provided between a p-doped semiconductor layer and a transparent conductive material layer of a photovoltaic device. The Schottky-barrier-reducing layer can be a conductive material layer having a work function that is greater than the work function of the transparent conductive material layer. The conductive material layer can be a carbon-material layer such as a carbon nanotube layer or a graphene layer. Alternately, the conductive material layer can be another transparent conductive material layer having a greater work function than the transparent conductive material layer. The reduction of the Schottky barrier reduces the contact resistance across the transparent material layer and the p-doped semiconductor layer, thereby reducing the series resistance and increasing the efficiency of the photovoltaic device.Type: ApplicationFiled: August 4, 2010Publication date: February 9, 2012Applicants: EGYPT NANOTECHNOLOGY CENTER, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Keith E. Fogel, Jee H. Kim, Devendra K. Sadana, George S. Tulevski, Ahmed Abou-Kandil, Hisham S. Mohamed, Mohamed Saad, Osama Tobail