Abstract: An imaging element according to an embodiment of the present disclosure includes a photoelectric conversion layer including an organic photoelectric conversion material, a hole transporting material, and an electron transporting material, in which the electron transporting material includes a fullerene compound monomer and a fullerene compound dimer.

Abstract: A first photoelectric conversion element according to an embodiment of the present disclosure incudes: a first electrode; a second electrode disposed to be opposed to the first electrode; and a photoelectric conversion layer provided between the first electrode and the second electrode and including a chromophore, fullerene or a fullerene derivative, and a hole-transporting material, in which the chromophore and the fullerene or the fullerene derivative are bonded to each other at least partially via a crosslinking group in the photoelectric conversion layer.

Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; an organic photoelectric conversion layer provided between the first electrode and second electrode; and a buffer layer provided between the first electrode and the organic photoelectric conversion layer, and including a mellitic acid derivative represented by the general formula (1).

Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and- an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Abstract: A photoelectric conversion element of the present disclosure includes a first electrode, a second electrode disposed to be opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b?]dithiophene (ChDT1) derivative represented by the general formula (1) or a Chryseno[1,2-b:7,8-b?]dithiophene (ChDT2) derivative represented by the general formula (2).

Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Abstract: A photoelectric converter includes: a first electrode; a second electrode; a first photoelectric conversion layer; a second photoelectric conversion layer; a first buffer layer; and a second buffer layer. The second electrode is disposed to be opposed to the first electrode. The first photoelectric conversion layer is provided between the first electrode and the second electrode. The first photoelectric conversion layer includes a first dye material and a first carrier transport material. The second photoelectric conversion layer is stacked on the second electrode side of the first photoelectric conversion layer between the first electrode and the second electrode. The second photoelectric conversion layer includes a second dye material and a second carrier transport material. The second dye material has a light absorption waveform different from a light absorption waveform of the first dye material. The first buffer layer has a first electrical conduction type.

Abstract: A photoelectric conversion element of the present disclosure includes a first electrode, a second electrode disposed to be opposed to the first electrode, and an organic photoelectric conversion layer provided between the first electrode and the second electrode and including at least one of a Chryseno[1,2-b:8,7-b?]dithiophene (ChDT1) derivative represented by the general formula (1) or a Chryseno[1,2-b:7,8-b?]dithiophene (ChDT2) derivative represented by the general formula (2).

Abstract: A photoelectric conversion element 10A according to an embodiment of the present disclosure includes: a first electrode 21; a second electrode 23 that is disposed to be opposed to the first electrode 21; and a photoelectric conversion layer 22 that is provided between the first electrode 21 and the second electrode 23. The photoelectric conversion layer 22 includes a hole transporting material as a first organic semiconductor material. The hole transporting material absorbs blue light.

Abstract: A photoelectric conversion element according to the disclosure includes: a first electrode and a second electrode that are disposed to face each other; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least one kind of polycyclic aromatic compound represented by any one of the following general formula (1), the following general formula (2), and the following general formula (3):

Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.

Abstract: A photoelectric conversion element according to the disclosure includes: a first electrode and a second electrode that are disposed to face each other; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least one kind of polycyclic aromatic compound represented by any one of the following general formula (1), the following general formula (2), and the following general formula (3):

Abstract: A solid-state imaging device and an imaging apparatus capable of realizing further miniaturization of an imaging apparatus and further improvement of light use efficiency are to be provided. The present technology provides a solid-state imaging device that includes a plurality of pixels arranged one- or two-dimensionally, in which each pixel includes at least a light receiving unit, and the light receiving unit included in at least some of the plurality of pixels have circularly polarized dichroism. The present technology also provides an imaging apparatus that includes at least: the solid-state imaging device; and a signal processing unit that generates an image capturing only specific circularly polarized light, on the basis of a signal obtained from at least one of the pixels of the solid-state imaging device.

Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.

Abstract: [Object] To provide a photoelectric conversion film, a solid-state image sensor, and an electronic device which have an increased imaging characteristic. [Solution] Provided is a photoelectric conversion film including: a subphthalocyanine derivative represented by the following General Formula (1), where, in General Formula (1), X represents any substituent selected from among the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group, R1 to R3 each independently represent a substituted or unsubstituted ring structure, and at least one of R1 to R3 includes at least one hetero atom in the ring structure.

Abstract: An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and—an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.