Abstract: This add-on automatic clutch device is to be added onto a vehicle having manual transmission and a clutch, and includes: a first hydraulic pipe having one end connected to a clutch master cylinder unit of the vehicle; a second hydraulic pipe having one end connected to a clutch release cylinder unit of the vehicle; a cylinder having a first port connected to the other end of the first hydraulic pipe and a second port connected to the other end of the second hydraulic pipe; a piston provided in the cylinder so as to be able to move back and forth; and a motor that generates drive power to cause the piston to move back and forth. A first port and a second port are disposed such that when the piston reaches the bottom dead center, oil can flow between the first hydraulic pipe and the second hydraulic pipe by the first port and the second port being connected through the cylinder.

Abstract: A method for producing a semiconductor diamond containing boron by the high pressure synthesis method, wherein a graphite material to be converted to the semiconductor diamond is mixed with boron or a boron compound, formed and fired, in such a way that the resultant graphite material contains a boron component uniformly dispersed therein and has an enhanced bulk density, a high purity and a reduced content of hydrogen.

Abstract: The present invention is to provide a diamond sintered compact having good conductivity together with the characteristics, such as hardness, thermal conductivity, thermal resistance, chemical stability, almost equal to those of a natural diamond. A boron-doped diamond sintered compact having good conductivity and high thermal resistance is produced by a sintering process, in which 90 to 99.9 wt. % of a boron-doped diamond powder and 0.1 to 10% wt. % of a powder comprising, one or more of carbonates including Mg, Ca, Sr or Ba, and/or one or more of composite carbonates composed by two or more of these elements, as a bonding phase component, are sintered together under Ht/HP conditions, and the bonding phase component melts and then fills into the space between the boron-doped diamond powder particles.

Abstract: The present invention is to provide a diamond sintered compact having good conductivity together with the characteristics, such as hardness, thermal conductivity, thermal resistance, chemical stability, almost equal to those of a natural diamond. A boron-doped diamond sintered compact having good conductivity and high thermal resistance is produced by a sintering process, in which 90 to 99.9 wt. % of a boron-doped diamond powder and 0.1 to 10% wt. % of a powder comprising, one or more of carbonates including Mg, Ca, Sr or Ba, and/or one or more of composite carbonates composed by two or more of these elements, as a bonding phase component, are sintered together under Ht/HP conditions, and the bonding phase component melts and then fills into the space between the boron-doped diamond powder particles.

Abstract: A chattering vibration inhibiting mechanism capable of inhibiting chattering vibration of a machine tool without increasing weight nor requiring a time-consuming adjustment work is provided. A box-shaped package body 21 attached to a spindle head 6, a supporting member 22 disposed to bridge between front and rear walls 21a, 21b in the box-shaped package body 21, and a damper 23 composed of an elastic member 27 and a weight 26 supported by the supporting member 22 are provided.

Abstract: A chattering vibration inhibiting mechanism capable of inhibiting chattering vibration of a machine tool without increasing weight nor requiring a time-consuming adjustment work is provided. A box-shaped package body 21 attached to a spindle head 6, a supporting member 22 disposed to bridge between front and rear walls 21a, 21b in the box-shaped package body 21, and a damper 23 composed of an elastic member 27 and a weight 26 supported by the supporting member 22 are provided.

Abstract: A diamond electrode having a prolonged life by combining a conventional diamond electrode having a relatively short life with other components is provided. A diamond electrode for electrolysis includes an electrode substrate, at least the surface of which comprises Magneli phase titanium oxide, and conductive diamond supported as an electrode catalyst on a surface of the electrode. The electrode catalyst may contain a titanium oxide powder. Magneli phase titanium oxide improves conductivity without forming a stable oxide layer on the substrate surface.

Abstract: A method for producing a semiconductor diamond containing boron by the high pressure synthesis method, wherein a graphite material to be converted to the semiconductor diamond is mixed with boron or a boron compound, formed and fired, in such a way that the resultant graphite material contains a boron component uniformly dispersed therein and has an enhanced bulk density, a high purity and a reduced content of hydrogen.

Abstract: A diamond electrode having a prolonged life by combining a conventional diamond electrode having a relatively short life with other components is provided. A diamond electrode for electrolysis includes an electrode substrate, at least the surface of which comprises Magneli phase titanium oxide, and conductive diamond supported as an electrode catalyst on a surface of the electrode. The electrode catalyst may contain a titanium oxide powder. Magneli phase titanium oxide improves conductivity without forming a stable oxide layer on the substrate surface.

Abstract: A temperature controller is provided for controlling a coolant temperature in a liquid coolant system including a liquid circulation circuit, in which coolant for cooling a machine circulates, and a refrigeration circuit for cooling the coolant. The operating capacity of a compressor of the refrigeration circuit is variably adjusted by an inverter, and when the operating condition of the machine is changed, the frequency value for driving the compressor is varied in accordance with the change. Accordingly, it is possible to immediately correspond to the change of a liquid temperature to be generated in the future. In addition, an appropriate control mode can be selected as a control for varying the frequency in combination with a normal feedback control, such that the liquid temperature may converge on a set value or may be co-changed to a room temperature.

Abstract: A method for growing a single crystal of a cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a dopant-containing boron nitride solvent a boron nitride starting material placed at a high temperature zone in the growing container, and providing a temperature gradient to the solvent so that the temperature dependence of the solubility is utilized to let the single crystal form and grow at a low temperature zone in the growing container.

Abstract: A method for growing a single crystal of cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a dopant-containing boron nitride solvent a boron nitride starting material placed at a high temperature zone in the growing container, and providing a temperature gradient to the solvent so that the temperature dependence of the solubility is utilized to let the single crystal form and grow at a low temperature zone in the growing container.

Abstract: A boron nitride complex comprising hBN in which lithium or an alkaline earth metal is diffused and supported in the form of its boron nitride. The boron nitride complex is prepared by heating hBN powder or a sintered product thereof and lithium, an alkaline earth metal, a lithium nitride or boride, or an alkaline earth metal nitride or boride in a non-oxidizing atmosphere to diffuse in and deposit on hBN powder or sintered product thereof, the lithium or alkaline earth metal in the form of its boron nitride. Also disclosed is a process for preparing a light-transmitting dense body of cubic system boron nitride, which comprises diffusing in and depositing on a sintered product of hexagonal system boron nitride, from 0.15 to 3.0 molar % of Me.sub.3 B.sub.2 N.sub.4 where Me is an alkaline earth metal, and sintering the Me.sub.3 B.sub.2 N.sub.4 -containing product thereby obtained, at a temperature of at least 1350.degree. C. under a thermodynamically stable pressure for cubic system boron nitride.

Abstract: Porous hollow fibers composed of a high density polyethylene the fibers having rectangular micropores that are oriented in the lengthwise direction of the fibers and having a porosity from 30 to 90% by volume are disclosed. Membranes composed of hollow fibers exhibit a water permeability of greater than 65 (ml/m.sup.2, hr, mmHg) as well as a human serum albumin permeability of greater than 30%. Such fibers are suited for use as filters, particularly as a membrane for simple fractionation of whole blood into it plasma and cellular components. The hollow fibers are obtained by spinning a high-density polyethylene under a high-draft condition followed by cold stretching and hot stretching, and without the use of any solvent or plasticizer.

Abstract: A process for producing a sintered body of cubic system boron nitride comprises steps of:(a) mixing raw material boron nitride selected from the group consisting of hexagonal system boron nitride, cubic system boron nitride, and a mixture thereof with Me.sub.3 B.sub.2 N.sub.4 (where: Me represents an alkaline earth metal) in an amount of from 0.15 to 3.0 mol %; and(b) treating said mixed material at a temperature of 1350.degree. C. and above under a thermodynamically stabilized pressure condition of the cubic system boron nitride.

Abstract: A process for preparing cubic boron nitride comprises heating hexagonal boron nitride and magnesium boron nitride at a temperature of at least 1350.degree. C. under a pressure at which the cubic boron nitride is thermodynamically stable, whereby the cubic boron having high strength and high purity can readily be obtainable. Also disclosed is a process for the preparation of magnesium boron useful as a starting material for the above process. This process comprises mixing hexagonal boron nitride and magnesium nitride or metal magnesium in a molar ratio of hexagonal boron nitride/magnesium being at least 0.6, and heating the mixture thus obtained, at a temperature of from 950.degree. to 1250.degree. C. under atmospheric pressure in a non-oxidizing atmosphere, e.g. a nitrogen atmosphere.

Abstract: Porous hollow fibers composed of a high density polyethylene the fibers having rectangular micropores that are oriented in the lengthwise direction of the fibers and having a porosity from 30 to 90% by volume are disclosed. Membranes composed of hollow fibers exhibit a water permeability of greater than 65 (ml/m.sup.2, hr, mmHg) as well as a human serum albumin permeability of greater than 30%. Such fibers are suited for use as filters, particularly as a membrane for simple fractionation of whole blood into its plasma and cellular components. The hollow fibers are obtained by spinning a high-density polyethylene under a high-draft condition followed by cold stretching and hot stretching, and without the use of any solvent or plasticizer.

Abstract: A porous polyethylene film was obtained which is characterized in that micropores are contiguous with one another from one surface to the other surface of the film to constitute a laminar structure, and said micropores assume the form of strips being composed of microfibrils that are arrayed in a direction in which the film is stretched and nodular portions that are coupled to said microfibrils nearly at right angles thereto, wherein the micropores have an average pore diameter over a range of 0.05 to 2 microns as measured using a mercury porosimeter, said film has a porosity over a range of 30 to 90%, and an elastic recovery factor from the 50% stretching ratio is less than 50%.

Abstract: A process for producing cubic system boron nitride comprises contacting calcium or strontium boron nitride with hexagonal system boron nitride and heating at higher than 1,450.degree. C. under the thermodynamically stable pressure for cubic system boron nitride.