Abstract: The invention is directed to a method of manufacturing an image display, comprising the step of sticking an adhesive optical film to an image display panel substrate surface having a display defect-inducible scratch, wherein the adhesive optical film is selected and used according to the image display panel such that the formula: Y×(0.97X+0.45)>0.19Z?0.006 is satisfied, wherein X (mm) is the amount of creep displacement one hour after a load of 500 g is applied at 23° C. to a 10 mm square of an adhesion area of the adhesive optical film stuck to the panel substrate, Y (mm) is the thickness of a pressure-sensitive adhesive layer of the adhesive optical film, and Z (mm) is a half length of the length of long side of the scratch of the image display panel substrate surface. According to the invention, a display defect, which would otherwise be caused by an scratch of the image display panel substrate, is avoided by filling the scratch with the pressure-sensitive adhesive layer of the adhesive optical film.

Abstract: A prosthesis-fixing structure includes an abutment embedded in a dental root and having a first groove formed on the external surface thereof; a prosthesis having an interlocking section with a second groove formed along an internal surface on a position corresponding to the first groove; and a C-ring fitting to the first and second grooves and supporting the prosthesis to the abutment in a removable state.

Abstract: An adhesive layer included in an adhesive-type optical film forms a portion located on the inside of a edge line of an optical film.

Abstract: The invention is directed to a method of manufacturing an image display, comprising the step of sticking an adhesive optical film to an image display panel substrate surface having a display defect-inducible scratch, wherein the adhesive optical film is selected and used according to the image display panel such that the formula: Y×(0.97X+0.45)>0.19Z?0.006 is satisfied, wherein X (mm) is the amount of creep displacement one hour after a load of 500 g is applied at 23° C. to a 10 mm square of an adhesion area of the adhesive optical film stuck to the panel substrate, Y (mm) is the thickness of a pressure-sensitive adhesive layer of the adhesive optical film, and Z (mm) is a half length of the length of long side of the scratch of the image display panel substrate surface. According to the invention, a display defect, which would otherwise be caused by an scratch of the image display panel substrate, is avoided by filling the scratch with the pressure-sensitive adhesive layer of the adhesive optical film.

Abstract: An infrared transparent optical element for use as an optical window for an infrared imaging camera includes an infrared transparent substrate, an antireflection film, and a protective film of a polymer material. The infrared transparent substrate has first and second major surfaces opposite each other, and the antireflection film is disposed on each of the first and second major surfaces of the substrate. The protective film is on an outer surface of the antireflection film on the first major surface of the substrate.

Abstract: An infrared transparent optical element of the invention is for use as an optical window for an infrared imaging camera. The optical element includes an infrared transparent substrate, an antireflection film, and a protective film made of a polymer material. The infrared transparent substrate has first and second major surfaces opposite to each other, and the antireflection film is formed on each of the first and second major surfaces of the substrate. The protective film is formed on an outer surface of the antireflection film on the first major surface of the substrate.

Abstract: An implant includes a main body member having bio-compatibility, and particles formed of bioactive material and dispersedly provided at the surface of an embedded section of the main body member. Each of the particles has a part embedded in the embedded portion and the other part protruding from the embedded portion. The main body member is formed of titanium or titanium alloy. The particles having osteo-conduction are formed of a material selected from among a group consisting of sintered substances of hydroxylapatite, &agr;-tricalcium phosphate, &bgr;-tricalcium phosphate, tetra-calcium phosphate, a single substance of amorphous calcium phosphate, monetite, brushite, 45S4 glass, and a mixture of them. It is desirable that the embedded section surface has a surface roughness in a range of 5 to 50 &mgr;m.

Abstract: An implant includes a main body member having bio-compatibility, and particles formed ofbioactive material and dispersedly provided at the surface of an embedded section of the main body member. Each of the particles has a part embedded in the embedded portion and the other part protruding from the embedded portion. The main body member is formed of titanium or titanium alloy. The particles having osteo-conduction are formed of a material selected from among a group consisting of sintered substances of hydroxylapatite, &agr;-tricalcium phosphate, &bgr;-tricalcium phosphate, tetra-calcium phosphate, a single substance of amorphous calcium phosphate, monetite, brushite, 45S4 glass, and a mixture of them. It is desirable that the embedded section surface has a surface roughness in a range of 5 to 50 &mgr;m.

Abstract: An implant includes a main body member having bio-compatibility, and particles formed of bioactive material and dispersedly provided at the surface of an embedded section of the main body member. Each of the particles has a part embedded in the embedded portion and the other part protruding from the embedded portion. The main body member is formed of titanium or titanium alloy. The particles having osteo-conduction are formed of a material selected from among a group consisting of sintered substances of hydroxylapatite, .alpha.-tricalcium phosphate, .beta.-tricalcium phosphate, tetra-calcium phosphate, a single substance of amorphous calcium phosphate, monetite, brushite, 45S4 glass, and a mixture of them. It is desirable that the embedded section surface has a surface roughness in a range of 5 to 50 .mu.m.

Abstract: A high-speed, high-density, small-sized, low-cost semiconductor device wherein the feeder substrate 2 for supplying power to the semiconductor elements 3 as a bare chip has the containers 2a for containing the semiconductor elements 3, the semiconductor elements 3 are bonded to the wiring layer 1b of the signal transmission substrate 1 for transmitting signals to the semiconductor elements 3 and contained in the containers 2a, the containers 2a are covered with the signal transmission substrate 1, and the signal transmission substrate 1 is superposed upon and bonded to the feeder substrate 2.

Abstract: A high purity .alpha.-tricalcium phosphate ceramic having a superior biocompatibility for use mainly as a bone filler, is produced by shaping a powder material formed by a wet method, followed by sintering it and then cooling at a predetermined rate.

Abstract: Flux for soldering comprising inorganic ion-exchanger and activator containing halogen atom, solder composition the flux and solder particles, soldering method comprising coating the solder composition on a portion for soldering, soldering method comprising coating flux containing activator on a portion for soldering, applying inorganic ion-exchanger to the portion and applying solder to the portion, and soldering method comprising mixing inorganic ion-exchanger with creamy solder to give mixture, coating the mixture on a circuit pattern of a wiring plate and heating the wiring plate. The flux for soldering and the soldering composition are excellent in metal ion-migration resistance, corrosion resistance, soldering property and storage stability, and can be preferably used without cleaning and the soldering methods can be preferably used in practical no-clean soldering methods.

Abstract: An implant is produced by coating a core material with a calcium phosphate type compound and converting the coating layer into an apatite type ceramic layer by a hydrothermal treatment.

Abstract: An electronic device comprises a housing made of a polycarbonate resin, and a novel double-sided printed circuit board. The printed circuit board has one side embedded in the housing, and the other side exposed to the interior of the housing. A plurality of refractory electronic components are mounted onto one side of the printed circuit board and include a resistor and a capacitor. A plurality of lower refractory electronic components are mounted onto the other side of the housing and include a semiconductor integrated circuit, and a transformer. Preferably, an insulating layer is applied to cover the one side of the printed circuit board and the refractory electronic components. Also, a metal layer is applied to cover the insulating layer and the inner surface of the housing.

Abstract: An electronic device comprises a housing made of a polycarbonate resin, and a novel double-sided printed circuit board. The printed circuit board has one side embedded in the housing, and the other side exposed to the interior of the housing. A plurality of refractory electronic components are mounted onto one side of the printed circuit board and include a resistor and a capacitor. A plurality of lower refractory electronic components are mounted onto the other side of the housing and include a semiconductor integrated circuit, and a transformer. Preferably, an insulating layer is applied to cover the one side of the printed circuit board and the refractory electronic components. Also, a metal layer is applied to cover the insulating layer and the inner surface of the housing.

Abstract: A local plating apparatus includes a fiber, a laser beam penetrating nozzle or a laser beam penetrating mask through which a laser beam can be directly irradiated on a portion to be plated when plating is conducted on the portion to be plated using a jet of plating solution. The apparatus enables a laser beam to reach the portion to be plated in a stable state, and ensures a high plating speed and uniform plating quality.

Abstract: A method for transferring patterns on a silicone ladder type resin, which comprises: applying onto a substrate a silicone ladder type resin to be represented by the following general formula (I) ##STR1## (where: R.sub.1 denotes a phenyl group or a lower alkyl group, and two R.sub.1 's may be the same or different kinds; R.sub.2 denotes hydrogen atom or a lower alkyl group, and four R.sub.2 's may be the same or different kinds; and n represents an integer of from 5 to 1,000); drying the thus applied resin layer; thereafter applying onto the resin layer a cresol novolac type positive photo-resist; forming a predetermined pattern in the photo-resist layer; subjecting the photo-resist layer to pretreatment; and finally etching the silicone ladder type resin.An etching liquid for etching a silicone ladder type resin, which comprises an aromatic type solvent.

Abstract: High purity phenyl silicone ladder polymer, and a method for producing such polymer, suitable for use as the protective film, the interlayer insulating film, etc. in the fabrication of semiconductor elements, which polymer contains therein 1 ppm or below of each of sodium, potassium, iron, copper, lead and chlorine, and 1 ppb or below of each of uranium and thorium, and which is represented by the following general formula (I): ##STR1## (where: R.sub.1 to R.sub.4 denote respectively hydrogen or a lower alkyl group; n is an integer of from 8 to 1,000); or the following general formula (II): ##STR2## (where: n is an integer of from 8 to 1,600).

Abstract: A material for forming a high purity thin film which includes a silicone ladder polymer dissolved in an organic solvent is applied to a substrate to form a thin film thereon. The thin film is then heated, thereby removing the solvent and simultaneously curing the thin film. Subsequently, the cured thin film is exposed to an oxygen plasma to form a high purity SiO.sub.2 thin film on the substrate. Although the method consists of simple processes and employs low treatment temperatures, it is capable of forming a high purity SiO.sub.2 thin film which exhibits excellent step coverage and high dielectric breakdown strength.

Abstract: A stress relaxation protective layer made of a silicone material is formed on a coating covering a circuit disposed on a substrate of a semiconductor device, and a predetermined depth of the surface of the stress relaxation protective layer is modified. A resist is formed on the thus-modified surface of the stress relaxation protective layer, and the thus-formed resist is patterned so that the resist in a predetermined region is removed. The stress relaxation protective layer in the region from which the above-described resist has been removed is removed by etching, and the remaining resist is removed. Next, the coating layer in the region from which the stress relaxation protective layer has been removed is removed by etching with the remaining stress relaxation protective layer used as a mask so that the circuit is exposed.