Abstract: In a semiconductor device having a fuse and an etching stopper film covering the fuse, an optical window exposing the etching stopper film and a contact hole exposing a conductor pattern are formed simultaneously. By applying a dry etching process further to the etching stopper film, an insulation film covering the fuse is exposed in the optical window.

Abstract: In a semiconductor device having a fuse and an etching stopper film covering the fuse, an optical window exposing the etching stopper film and a contact hole exposing a conductor pattern are formed simultaneously. By applying a dry etching process further to the etching stopper film, an insulation film covering the fuse is exposed in the optical window.

Abstract: An apparatus for measuring deviations of positions of leads of an electrical component comprises a light emitting unit for radiating a laser light from below toward the leads projecting from a molding of the electrical component sucked to a nozzle of a pick and place head. First and second photodetectors are disposed at both sides of the light emitting unit for detecting laser lights reflected at the leads, so as to enable to effect the measurement rapidly and accurately.

Abstract: Using a single mask pattern on a semiconductor substrate, a doped base contact region adjacent to the surface of the substrate, a buried insulating region below the base contact region, and an insulating layer on the base contact region, and optionally, a metal or metal silicide base-electrode-taking-out layer on the base contact region, are formed, respectively. Doped emitter and intrinsic base regions are formed below the mask pattern. A collector region is defined by the base contact region and the buried insulating layer to be inside thereof, i.e., below the mask pattern. Thus, a bipolar transistor is formed in a size that is essentially necessary, thereby reducing the collector-base capacitance, the base resistance, and the size of the device.