Abstract: Provided is a technique capable of improving the connection reliability of solder connection of a semiconductor device under a high temperature environment and reducing the wetting and spreading defect of the solder. As a means therefor, a solder containing Cu at a content of 3 to 9 wt %, Sb at a content of 6.7 to 9.6 wt %, and Sn and added with one or a plurality of types of elements among Fe of 0.004 to 0.01 wt %, Bi of 0.002 to 0.04 wt %, Pb of 0.01 to 0.09 wt %, and As of 0.0125 to 0.02 wt % is used as a solder to bond a semiconductor element.

Abstract: To provide a method for producing granulated body for lithium adsorption that easily maintain their shapes with a high adsorption capability and more robust granulated body. The method for producing the granulated body for lithium adsorption includes a kneading step of kneading a powder of a lithium adsorbent precursor, an organic binder, and a hardening agent for accelerating hardening of the organic binder to obtain a kneaded material, a granulating step of granulating the kneaded material to obtain granulated body, and a baking step of baking the granulated body at 90° C. or more and 120° C. or less to obtain granulated body for lithium adsorption. This aspect allows obtaining the granulated body for lithium adsorption that easily maintain their shapes with a high adsorption capability and more robust granulated body.

Abstract: A display device includes a substrate, a plurality of pixels, a light emitting element, and an inorganic insulating layer. The pixels are provided to the substrate. The light emitting element is provided to each of the pixels. The inorganic insulating layer has translucency and covers at least part of the light emitting element. The inorganic insulating layer includes a side part and an extending part. The side part is provided to the side surface of the light emitting element. The extending part is provided at a side on the lower end of the side part and extending toward the outer side of the light emitting element than the side part in planar view seen from the normal direction of the substrate.

Abstract: A compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer having resistance to anti-PD-1 antibody/anti-PD-L1 antibody therapy is provided. The present inventors have conducted studies on a compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer having resistance to anti-PD-1 antibody/anti-PD-L1 antibody therapy, and found that a pyridazinyl-thiazolecarboxamide compound has DGK ? (DGKzeta) inhibitory effect, leading to completion of the present invention. The pyridazinyl-thiazolecarboxamide compound of the present invention has DGK ? inhibitory effect, and can be used as a therapeutic agent for treatment of cancer related to activation of immune cells or cancer having resistance to anti-PD-1 antibody/anti-PD-L1 antibody therapy.

Abstract: A vehicle includes a body. The vehicle includes a front bumper reinforcement that is attached to a front end of the body, and extends along a vehicle width direction. The vehicle includes a lower bumper reinforcement that is attached to the front end of the body, is located under the front bumper reinforcement, and extends along the vehicle width direction. The vehicle includes at least one specific member that is fixed to a partial section of the lower bumper reinforcement along an extending direction of the lower bumper reinforcement. Each of the at least one specific member includes a first portion that covers a front face of the lower bumper reinforcement, and a second portion that protrudes more upward than an upper face of the lower bumper reinforcement.

Abstract: A determination method for a psychiatric disorder includes: acquiring a first reference value, a second reference value, a first comparison value, and a second comparison value, the first reference value being a heart rate variability index of a healthy person under a first sound stimulus environment, the second reference value being a heart rate variability index of the healthy person under a second sound stimulus environment different from the first sound stimulus environment, the first comparison value being a heart rate variability index of a user under the first sound stimulus environment, the second comparison value being a heart rate variability index of the user under the second sound stimulus environment; and executing comparison processing among the first reference value, the second reference value, the first comparison value, and the second comparison value to determine a possibility that the user has a psychiatric disorder.

Abstract: To provide a method for producing lithium hydroxide allowing increasing a purity of an obtained lithium hydroxide. The method for producing lithium hydroxide includes a lithium adsorption step, a lithium elution step, an impurity removal step, and a conversion step. The impurity removal step includes: (3A) a carbonating step of a step of adding a carbonic acid source to a second lithium containing solution to obtain rough lithium carbonate; (3B) a hydrocarbonating step of a step of blowing carbon dioxide to a slurry containing rough lithium carbonate to obtain a lithium hydrogen carbonate solution; (3C) a decarbonation step of a step of heating the lithium hydrogen carbonate solution to obtain purified lithium carbonate; and (3D) an acid solution dissolution step of a step of dissolving the purified lithium carbonate in an acid solution to obtain a third lithium containing solution.

Abstract: A method for producing lithium manganese oxide that is a precursor of a lithium adsorbent under atmospheric pressure is provided. The method for producing a precursor of a lithium adsorbent comprises the following steps (1) to (3): (1) A 1st mixing step of mixing a manganese salt and alkali hydroxide, so as to obtain a 1st slurry containing manganese hydroxide; (2) a 2nd mixing step of adding lithium hydroxide to the 1st slurry and then mixing the mixture to obtain a 2nd slurry; and (3) an oxidation step of adding an oxidizing agent to the 2nd slurry, so as to obtain a precursor of a lithium adsorbent. The method for producing a precursor of a lithium adsorbent comprises these steps, so that a precursor of a lithium adsorbent can be produced under atmospheric pressure. Therefore, a precursor of a lithium adsorbent can be produced at a limited cost.

Abstract: A coating material for underwater structures includes: iron (II) fulvate generated by causing at least iron (II) sulfate and a fulvic acid to react, an outer surface of an underwater structure that is at least partially installed in water being coated with the coating material.

Abstract: A compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy is provided. The present inventors have conducted studies on a compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy, and confirmed that a heteroaryl carboxamide compound has DGK ? (DGKzeta) inhibitory effect, leading to completion of the present invention. The heteroaryl carboxamide compound of the present invention has DGK ? inhibitory effect, and can be used as a therapeutic agent for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy.

Abstract: A semiconductor device includes a semiconductor element having an Ni—V electrode and a conductor, the semiconductor element and the conductor being bonded via Sn-based lead-free solder. In the semiconductor device, an Sn—V compound layer and an (Ni, Cu)3Sn4 compound layer adjacent to the Sn—V compound are formed adjacent to an interface between the semiconductor element and the Sn-based lead-free solder. A manufacturing method for a semiconductor device according to the present invention includes: causing the Sn-based lead-free solder and the Ni—V electrode to react with each other to form an Sn—V layer and an (Ni, Cu)3Sn4 compound layer; and following formation of the Sn—V layer, leaving an unreacted layer of the Ni—V electrode, the unreacted layer having not reacted with the Sn-based lead-free solder, intact.

Abstract: A semiconductor device includes a semiconductor element having an Ni—V electrode and a conductor, the semiconductor element and the conductor being bonded via Sn-based lead-free solder. In the semiconductor device, an Sn—V compound layer and an (Ni, Cu)3Sn4 compound layer adjacent to the Sn—V compound are formed adjacent to an interface between the semiconductor element and the Sn-based lead-free solder. A manufacturing method for a semiconductor device according to the present invention includes: causing the Sn-based lead-free solder and the Ni—V electrode to react with each other to form an Sn—V layer and an (Ni, Cu)3Sn4 compound layer; and following formation of the Sn—V layer, leaving an unreacted layer of the Ni—V electrode, the unreacted layer having not reacted with the Sn-based lead-free solder, intact.

Abstract: A compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy is provided. The present inventors have conducted studies on a compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy, and confirmed that a heteroaryl carboxamide compound has DGK ? (DGKzeta) inhibitory effect, leading to completion of the present invention. The heteroaryl carboxamide compound of the present invention has DGK ? inhibitory effect, and can be used as a therapeutic agent for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy.

Abstract: A power semiconductor module, which is a semiconductor device, includes a semiconductor element 155 and a lead frame 318 that is disposed to face the semiconductor element 155 and connected to the semiconductor element 155 by a solder material 162. The lead frame 318 has the top surface 331 including a surface facing the semiconductor element 155, and the side surface 334 connected to the peripheral edge portion 333 of the top surface 331 at a predetermined angle with respect to the top surface 331. The top surface of the lead frame 318 includes the solder surface 332 that is in contact with the solder material 162 and the solder resistance surface on which the solder material 162 is less wettable than on the solder surface 332. The solder resistance surface is formed to surround the periphery of the solder surface 332. In this manner, when the semiconductor element and the lead frame are solder-joined in the semiconductor device, the region where the solder wet-spreads is appropriately controlled.

Abstract: A compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy is provided. The present inventors have conducted studies on a compound useful as an active ingredient of a pharmaceutical composition for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy, and confirmed that a heteroaryl carboxamide compound has DGK ? (DGKzeta) inhibitory effect, leading to completion of the present invention. The heteroaryl carboxamide compound of the present invention has DGK ? inhibitory effect, and can be used as a therapeutic agent for treatment of cancer related to activation of immune cells or cancer resistant to anti-PD-1 antibody/anti-PD-L1 antibody therapy.

Abstract: A semiconductor device comprises: a diode element with a main surface having an electrode and a back surface having another electrode; a heat dissipation base arranged to face the diode element; a Cu lead arranged to face the diode element; a bonding material which bonds the back surface of the diode element and the heat dissipation base to each other; and a bonding material which bonds the main surface of the diode element and the Cu lead to each other. The bonding material provided on the back surface side of the diode element is a lead-free solder having a melting point higher than 260° C. and a thermal expansion coefficient lower than that of a Zn—Al solder; and the bonding material provided on the main surface side of the diode element contains a high-melting-point metal having a melting point higher than 260° C. and a compound of Sn and the high-melting-point metal.

Abstract: A non-transitory storage medium storing a computer program for causing a computer to calculate an action of each object within a field to cause a match between the user and the opponent to proceed, and for providing the game in which the first turn of an offense and the second turn of a defense are switched between the user and the opponent based on a calculation result of the action, wherein the computer program causes the computer to serve as a selection opportunity provision unit that suspends the action of each object in conjunction with switching of the turns and provides an opportunity of selection regarding the match to the user, and a calculation control unit that controls calculation of the match so that the selection by the user is reflected in the calculation of the match within a target period until switching of the turns occurs next.

Abstract: A semiconductor device includes: a semiconductor element; and a first conductor and a second conductor respectively joined to a first surface and a second surface of the semiconductor element via Sn-based solder, in which a Ni-based plated layer is formed on surfaces of the first conductor and the second conductor that oppose the Sn-based solder and on the first surface and the second surface of the semiconductor element, and an interface reaction inhibition layer made of (Cu, Ni)6Sn5 and having a layer thickness of 1.2 to 4.0 ?m is formed at an interface between the Ni-based plated layer and the Sn-based solder.

Abstract: Provided is a method for producing a lithium-containing solution that allows increasing a content rate of lithium in a solution after an eluting step, and suppressing an amount of an eluted solution used in a process after the eluting step, thus suppressing production cost of lithium. A method for producing a lithium-containing solution includes an adsorption step of bringing a lithium adsorbent obtained from lithium manganese oxide in contact with a low lithium-containing solution to obtain post-adsorption lithium manganese oxide, an eluting step of bringing the post-adsorption lithium manganese oxide in contact with an acid-containing solution to obtain an eluted solution, and a manganese oxidation step of oxidating manganese to obtain a lithium-containing solution with a suppressed manganese concentration. The adsorption step, the eluting step, and the manganese oxidation step are performed in this order, and the acid-containing solution includes the eluted solution with acid added.

Abstract: A method for producing lithium hydroxide that allows reducing a load of removing divalent or more ions with an ion-exchange resin is provided. The method for producing lithium hydroxide includes steps (1) to (3) below. (1) a neutralization step: a step of adding an alkali to a first lithium chloride containing liquid to obtain a post-neutralization liquid, (2) an ion-exchange step: a step of bringing the post-neutralization liquid into contact with an ion-exchange resin to obtain a second lithium chloride containing liquid, and (3) a conversion step: a step of electrodialyzing the second lithium chloride containing liquid to obtain a lithium hydroxide containing liquid. Since this producing method allows roughly removing divalent or more ions in the neutralization step, a load of metal removal with the ion-exchange resin is reducible.