Abstract: Provided is a separation and recovery apparatus for continuously separating and recovering, from a resin mixture containing a resin containing a hydrolyzable polymer and a resin containing a nonhydrolyzable polymer, a hydrolytic component a of the hydrolyzable polymer A and the nonhydrolyzable polymer B, the apparatus including: a crushing unit that crushes the resin mixture a melting/discharging unit that melts a crushed product obtained by the crushing unit to form a fluid and discharges the fluid at a high pressure; and a hydrothermal reaction treatment unit that continuously subjects the fluid discharged from the melting/discharging unit to a hydrothermal reaction treatment, wherein, in the melting/discharging unit, the hydrolyzable polymer A is hydrolyzed, and the hydrolytic component a thereof is dissolved and transferred into water permeating a sintered alloy diaphragm, thereby separating the nonhydrolyzable polymer B.

Abstract: A metal filling apparatus minimizes the thickness of excess metal formed on an object and fills molten metal into a minute space to have an opening on the object. A table holds a semiconductor wafer, piston has a pressure portion on a side facing the table, and a pressing mechanism engages the piston onto the wafer, and an airtight chamber is formed by the wafer on the table, housing, and piston. A mechanism reduces pressure inside the chamber by exhausting gas, a mechanism supplies molten metal to the chamber, and a mechanism supplies an inert gas into the chamber.

Abstract: The present invention relates to a metal filling apparatus which can minimize the thickness of a layer of excess metal formed on an object to be processed after processing and which is capable of filling a molten metal into a minute space (via, through hole) formed to have an opening on the object to be processed. A metal filling apparatus 1 comprises a holding table H holding a semiconductor wafer, a piston P provided facing the holding table H and having a metallic pressing portion formed on the side facing the holding table H, a pressing mechanism 5 provided to be capable of pressing the piston P onto the semiconductor wafer K held on the holding table H and other components, and an airtight processing chamber 2 is formed by the semiconductor wafer held on the holding table H, the housing C and the piston P.

Abstract: The present invention provides a composition for controlling a house insect pest, such as termites, ants or cockroaches, which comprises, as active ingredients, at least two compounds selected from the group consisting of (a) a certain pyridine compound, (b) a benzoylurea compound, (c) a pyrethroid compound and (d) a certain hydrazone compound; and a composition for controlling a house insect pest, which comprises, as an active ingredient, a certain hydrazone compound.

Abstract: The present invention provides a composition for controlling a house insect pest, such as termites, ants or cockroaches, which comprises, as active ingredients, at least two compounds selected from the group consisting of (a) a certain pyridine compound, (b) a benzoylurea compound, (c) a pyrethroid compound and (d) a certain hydrazone compound; and a composition for controlling a house insect pest, which comprises, as an active ingredient, a certain hydrazone compound.

Abstract: A semiconductive glaze product is provided, which exhibits low thermal expansion coefficient without adversely affecting other glaze characteristics, and which, when applied to an insulator, attains enhanced mechanical strength of the insulator. The semiconductive glaze product contains a glaze composition and a flux. The glaze composition contains a KNaO—MgO—CaO—Al2O3-SiO2 base glaze, in which the compositional proportions of KNaO, MgO, and CaO, as represented by the Seger formula, are 0.1 to 0.4, 0.2 to 0.6, and balance, respectively. The glaze composition contains a metal oxide composition including tin oxide and antimony oxide, wherein the amount of flux is 10 parts by weight or less on the basis of 100 parts by weight of the glaze composition.

Abstract: The present invention provides a composition for controlling a house insect pest, such as termites, ants or cockroaches, which comprises, as active ingredients, at least two compounds selected from the group consisting of (a) a certain pyridine compound, (b) a benzoylurea compound, (c) a pyrethroid compound and (d) a certain hydrazone compound; and a composition for controlling a house insect pest, which comprises, as an active ingredient, a certain hydrazone compound.

Abstract: The present invention provides a semiconductive glaze product which exhibits low thermal expansion coefficient without adversely affecting other glaze characteristics, and which, when applied to an insulator, attains enhanced mechanical strength of the insulator; a method for producing the semiconductive glaze product; and an insulator coated with the semiconductive glaze product. The semiconductive glaze product contains a glaze composition and a flux, the glaze composition containing a KNaO—MgO—CaO—Al2O3—SiO2-based base glaze in which the compositional proportions of basic components; i.e., KNaO, MgO, and CaO, as represented by the Seger formula, are 0.1 to 0.4, 0.2 to 0.6, and balance, respectively, and containing a metal oxide composition including tin oxide and antimony oxide, wherein the amount of the flux is 10 parts by weight or less on the basis of 100 parts by weight of the glaze composition.

Abstract: The present invention provides a CZ silicon wafer, wherein the wafer includes rod-like void defects and/or plate-like void defects inside thereof, and a CZ silicon wafer, wherein the silicon wafer includes void defects inside the wafer, a maximum value of a ratio between long side length L1 and short side length L2 (L1/L2) in an optional rectangle circumscribed the void defect image projected on an optional {110} plane is 2.5 or more, and the silicon wafer including rod-like void defects and/or plate-like void defects inside the wafer, wherein a void defect density of the silicon wafer at a depth of from the wafer surface to at least 0.5 &mgr;m after the heat treatment is ½ or less than that of inside the wafer. According to this, the silicon wafer, which is suitable for expanding reducing effect of void defects by heat treatment up to a deeper region, can be obtained.

Abstract: Alumina cement mortar is used as a source material for a kneaded cement cured body for joining hardware onto an insulator body, whereby the insulator can maintain high initial and long term mechanical strength and high electrical strength over a long period of time, and the curing time for forming the cured body is shortened to reduce the cost of producing the insulator. The alumina cement mortar is formed by kneading a mixture of alumina cement particles having a specific surface area of at least 3500 cm2/g, a polymer-steric-hindrance type water reducing agent, an aggregate, and water, or an alumina cement mortar is obtained by kneading a mixture of alumina cement particles having an amorphous phase on an outer peripheral surface of particles and having a specific surface area of at least 3500 cm2/g, a water reducing agent, an aggregate, and water.

Abstract: Use of alumina cement mortar is enabled as a source material of a cement kneaded product cured body for joining hardwares onto an insulator body, whereby an insulator can maintain a high mechanical strength (initial strength, long-term strength) and a high electrical strength for a long period of time, and the curing time in forming the cured body is shortened to reduce the cost of producing the insulator. As a source material of a cement kneaded product cured body 14 for joining hardwares (12, 13), one makes use of an alumina cement mortar obtained by kneading an alumina cement having a specific surface area of at least 3500 cm2/g, a polymer-steric-hindrance type water reducing agent, an aggregate, and water, or an alumina cement mortar obtained by kneading an alumina cement having an amorphous phase on an outer peripheral surface of particles and having a specific surface area of at least 3500 cm2/g, a water reducing agent, an aggregate, and water.

Abstract: A method of manufacturing an ultraviolet resistant object, wherein the object has at least a portion made of a polymer material, and is provided with an ultraviolet shielding film covering at least a portion of a surface of the portion made of the polymer material, including the steps of forming the ultraviolet shielding film by vapor deposition over the surface of the portion to be covered with the film; and irradiating, prior to the formation of the ultraviolet shielding film or in an initial stage of the film forming step, the film formation surface with ions with an energy in a range from 0.05 keV to 2 keV to attain the total irradiation rate in a range from 1.times.10.sup.13 ions/cm.sup.2 to 5.times.10.sup.17 ions/cm.sup.2.

Abstract: A process for preparing a solid material containing coal ash includes a first step of mixing coal ash with a calcium compound to obtain a mixture, a second step of molding the mixture to obtain a molded article, and a third step of subjecting the molded article obtained in the second step to a hydrothermal treatment at a temperature of at least 120.degree. C. under high pressure. In the first step, 40 to 95 parts by weight of the coal ash is mixed with 60 to 5 parts by weight of the calcium compound, and the coal ash to be used has a bulk density of at least 0.8 g/cm.sup.3, an average particle diameter of 5 to 40 .mu.m and an aluminum content of 35% by weight or less in terms of Al.sub.2 O.sub.3. By the use of a blowing agent or the like, it is also possible to obtain a porous lightweight solid.

Abstract: A piezoelectric semiconductor is a single crystal composed mainly of ZnO having properties such as electrical conductivity of 10.sup.-11 .about.10.sup.-3 1/.OMEGA..multidot.cm suitable for use as an acoustoelectric element, by adding a given amount of H.sub.2 O.sub.2 to the alkali solvent, or by using NH.sub.4 OH in the alkali solvent, or by doping the ZnO single crystal with Li or a trivalent metal. The piezoelectric semiconductor can be suitably used as a ultrasonic transducer material of acoustoelectric type and can also be used as a material for ultrasonic amplification, an surface acoustic wave filter, a piezoelectric transducer, a fluorescent material for emitting a low-velocity electron beam, etc.

Abstract: A ZnO.sub.2 voltage non-linear resistor excellent in all characteristics of life under electrical stress, current impulse withstandability, discharge voltage ratio, change rate of discharge voltage after application of current impulse and moisture absorbency contains, as additive ingredients: 0.4-1.5 mol. % bismuth oxides as Bi.sub.2 O.sub.3, 0.3-1.5 mol. % cobalt oxides as Co.sub.2 O.sub.3, 0.2-1.0 mol. % manganese oxides as MnO.sub.2, 0.5-1.5 mol. % antimony oxides as Sb.sub.2 O.sub.3, 0.1-1.5 mol. % chromium oxides as Cr.sub.2 O.sub.3, 0.4-3.0 mol. % silicon oxides as SiO.sub.2, 0.5-2.5 mol. % nickel oxides as NiO, 0.001-0.05 mol. % aluminum oxides as Al.sub.2 O.sub.3, 0.0001-0.05 mol. % boron oxides as B.sub.2 O.sub.3, 0.0001-0.05 mol. % silver oxides as Ag.sub.2 O, and 0.0005-0.1 mol. % zirconium oxides as ZrO.sub.2, which bismuth oxides contain 30 wt. % of a .gamma.-type crystalline phase. A small-sizable ZnO.sub.

Abstract: A voltage non-linear resistor element mainly including ZnO, substantially free from internal defects, exhibiting an excellent current impulse withstand capability, can be manufactured by a process wherein an SiC inclusion in the starting ZnO powder is restricted to at most 10 ppm, preferably at most 0.1 ppm, by weight, whereby formation of closed pores in the element is prevented, which is otherwise caused by decomposition of considerable amount of SiC during firing. The starting ZnO powder has an average particle diameter (R) of 0.1-2.0 .mu.m, preferably 0.3-0.8 .mu.m, a particle size distribution within the range of between 0.5R and 2R, of at least 70%, preferably 80%, by weight, needle-like crystals of at most 20%, preferably at most 10%, by weight, and an SiC content as an impurity of at most 10 ppm, preferably at most 0.1 ppm, by weight.

Abstract: A voltage non-linear resistor element mainly comprising ZnO, substantially free from internal defects, exhibiting an excellent current impulse withstand capability, can be manufactured by a process wherein an SiC inclusion in the starting ZnO powder is restricted to at most 10 ppm, preferably at most 0.1 ppm, by weight, whereby formation of closed pores in the element is prevented, which is otherwise caused by decomposition of considerable amount of SiC during firing. The starting ZnO powder has an average particle diameter (R) of 0.1-2.0 .mu.m, preferably 0.3-0.8 .mu.m, a particle size distribution within the range of between 0.5R and 2R, of at least 70%, preferably 80%, by weight, needle-like crystals of at most 20%, preferably at most 10%, by weight, and an SiC content as an impurity of at most 10 ppm, preferably at most 0.1 ppm, by weight.

Abstract: A voltage non-linear resistor element mainly including ZnO, substantially free from internal defects, exhibiting an excellent current impulse withstand capability, can be manufactured by a process wherein an SiC inclusion in the starting ZnO powder is restricted to at most 10 ppm, preferably at most 0.1 ppm, by weight, whereby formation of closed pores in the element is prevented, which is otherwise caused by decomposition of considerable amount of SiC during firing. The starting ZnO powder has an average particle diameter (R) of 0.1-2.0 .mu.m, preferably 0.3-0.8 .mu.m, a particle size distribution within the range of between 0.5R and 2R, of at least 70%, preferably 80%, by weight, needle-like crystals of at most 20%, preferably at most 10%, by weight, and an SiC content as an impurity of at most 10 ppm, preferably at most 0.1 ppm, by weight.

Abstract: An improved voltage non-linear resistor having a superior voltage-current characteristic property, a superior switching current impulse withstand capability, a superior lightning current impulse withstand capability, and a large discharge voltage V.sub.0.1mA of 230-330 V/mm, a small deterioration rate of the discharge voltage V.sub.0.1mA after applying a lightning current impulse, a prolonged electric life under electrical stress and an improved discharged voltage at a large current area is provided which contains zinc oxide as a main component, and desired amounts of subsidiary components of bismuth oxide, cobalt oxide, manganese oxide, antimony oxide, chromium oxide, silicon oxide, nickel oxide, aluminum oxide, boron oxide and silver oxide. The resistor has a discharge voltage of V.sub.0.1mA of 230-330 V/mm at a current density of 0.1 mA/cm.sup.2 calculated per unit thickness of the sintered resistor, a discharge voltage ration V.sub.10A /V.sub.0.1mA of 1.2-1.45 a current densities of 10 A/cm.sup.2 and 0.

Abstract: An excellent voltage non-linear resistor for use in a gapped lightning arrestor having a composition containing 1 0.5-1.2 mole % of bismuth oxide calculated as Bi.sub.2 O.sub.3, 2 0.3-1.5 mole % of cobalt oxide calculated as Co.sub.2 O.sub.3, 3 0.2-0.8 mole % of manganese oxide calculated as MnO.sub.2, 4 0.5-1.5 mole % of antimony oxide calculated as Sb.sub.2 O.sub.3, 5 0.1-1.5 mole % of chromium oxide calculated as Cr.sub.2 O.sub.3, 6 0.6-2.0 mole % of silicon oxide calculated as SiO.sub.2, 7 0.8-2.5 mole % of nickel oxide calculated as NiO, 8 0.004-0.04 mole % of aluminum oxide calculated as Al.sub.2 O.sub.3, 0.0001-0.05 mole % of boron oxide calculated as B.sub.2 O.sub.3 , 10.circle. 0.001-0.05 mole % of silver oxide calculated as Ag.sub.2 O, and 11.circle. the rest of zinc oxide, 12.circle. a limited current of 250-350 V/mm at a current density of 0.1 A/cm.sup.2 calculated per unit thickness of the sintered resistor, 13.circle. a limited current ratio of V.sub.0.1A /V.sub.0.1mA of 1.2-1.