Abstract: A display panel has a resin substrate and a printed layer formed on at least a part of the resin substrate through inkjet printing. The printed layer is formed from cured products of UV-curable inks each containing UV-curable monomers which are polymerized and cured by UV irradiation, and the printed layer has at least two such cured products having different pencil hardness values.

Abstract: A display panel has a resin substrate and a printed layer formed on at least a part of the resin substrate through inkjet printing. The printed layer is formed from cured products of UV-curable inks each containing UV-curable monomers which are polymerized and cured by UV irradiation, and the printed layer has at least two such cured products having different pencil hardness values.

Abstract: A commutator-integrated armature of a rotary electric machine is comprised of a rotary shaft, an armature core composed of a plurality of laminated sheets, an armature coil composed of a plurality of conductor segments. The conductor segments have in-slot portions respectively inserted into a plurality of slots of the armature core and end portions forming a flat commutator. The armature core has an anchoring portion for anchoring a part of each of the in-slot portions to the armature core more strongly than the rest thereof. The surface of the flat commutator is maintained flat even if the conductor segments repeat thermal expansion and contraction.

Abstract: A method of manufacturing a back light type display panel includes a first step of forming on a transparent base film an opaque area of a thick layer of toner particles and a transparent area of a thin layer of toner particles, a second step of covering the opaque and transparent areas of the base film with a transparent protection film. In this step, a thermoplastic adhesive agent is coated on the protection film to form a laminate member of thick and thin layers of toner and the protection film. The method further includes a third step of vacuuming the laminate member and its surrounding, and a fourth step of heating the laminate member to be lower for the toner to melt and sufficiently high for the adhesive agent to have a characteristic of tack and pressing the laminate member at a first pressure by a pair of pressing boards, and a fifth step of heating the laminate member to be sufficiently high for the toner to melt.

Abstract: A commutator-integrated armature of a rotary electric machine is comprised of a rotary shaft, an armature core composed of a plurality of laminated sheets, an armature coil composed of a plurality of conductor segments. The conductor segments have in-slot portions respectively inserted into a plurality of slots of the armature core and end portions forming a flat commutator. The armature core has an anchoring portion for anchoring a part of each of the in-slot portions to the armature core more strongly than the rest thereof. The surface of the flat commutator is maintained flat even if the conductor segments repeat thermal expansion and contraction.

Abstract: A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which; at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the mail surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity.

Abstract: A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the main surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity.

Abstract: Disclosed in an intake pipe pressure detecting device for detecting the pressure in that section of an intake pipe in an internal combustion engine which is on the downstream side of a throttle valve provided in the intake manifold. The pressure detecting device comprises a mixing chamber which has an opening in the wall of the intake pipe, a pressure introducing path which opens onto this mixing chamber, and air inlets adapted to allow fresh air to enter the mixing chamber, thereby generating an air flow directed from the mixing chamber to the intake pipe.

Abstract: A semiconductor pressure transducer comprises a metal housing having a cylindrical recess to which an inlet passage of a medium to be measured is opened, a glass base being received in the recess and having a large diameter cylindrical portion and a small diameter cylindrical portion integrally connected to the large diameter cylindrical portion, a rubber O-ring interposed between a bottom of the recess and the base, a metal tubular collar disposed in the recess around the base to come into contact with the bottom of the recess, the collar urged by a caulked portion of the housing to press the base, a sensor chip provided on an end of the small diameter cylinder of the base for generating an electric signal in response to pressure of said medium, an annular clearance provided between the collar and the base, and an introducing passage provided in the base for introducing the medium from the inlet passage to the sensor chip.

Abstract: The semiconductor pressure sensor embodying the present invention comprises a housing. A sensor board is located in this housing. A pressure-sensing chip, which is formed of a semiconductor and capable of measuring the pressure of a pressure medium, is mounted on the sensor board. Another semiconductor chip, which operates in cooperation with the pressure-sensing chip, is also mounted on the sensor board. A shielding member is located in the housing. This shielding member encloses the pressure-sensing chip in such a manner that the pressure-sensing chip is isolated from the semiconductor chip, and defines a storage chamber which is airtight from the other regions in the housing and adapted to store the pressure-sensing chip. The interior of the housing, except for the storage chamber, is filled with filler, so as to protect the semiconductor chip.

Abstract: A gaseous atmosphere control apparatus for heat-treating semiconductors in a uniform gaseous atmosphere condition is disclosed. The control apparatus is provided with a reaction pipe through which semiconductor wafers are transferred to be heat-treated. A gas distribution pipe is fixed to the inside wall of the reaction pipe for guiding the transfer of the wafers and supplying heat-treating gas in the reaction pipe. The distribution pipe is provided with a plurality of blow-off holes, the diameter thereof being made wider as the pipe extends longitudinally, to thereby control the gaseous atmosphere condition in the reaction pipe to be uniform.

Abstract: The invention discloses an apparatus for thermal diffusion of semiconductor devices, wherein a plurality of wafer boats each made of a refractory material and adapted to carry a predetermined number of wafers to be processed are sequentially fed into a furnace tube containing a high temperature, diffusion gas atmosphere and continuously transported at a predetermined speed through the furnace tube so that each wafer may have substantially the same thermal treatment and high productivity may be attained.

Abstract: An apparatus for automatically transferring semiconductor wafers is disclosed. Semiconductor wafers are loaded on a boat which is placed on a pair of first supporting bars. A pair of second supporting bars are driven by a motor to repeat circular motion between the first supporting bars. The second supporting bars, circularly moving in parallel with the first supporting bars, forwardly transfer the boat. The boat is kept uplifted over the first supporting bars during the forward transfer thereof. Repetition of the circular motion of the second supporting bars makes the automatic transfer of the semiconductor wafers to be heat-treated in a semiconductor manufacturing system.

Abstract: A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the main surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity.