Abstract: Functional devices for inspecting disks are arranged around a turntable at equal spacings of angle 2n.pi./(n+m) in the order of the operations they perform. The turntable is rotated both in forward direction by angle 2n.pi./(n+m) and in reverse direction by angle 2m.pi./(n+m) such that the total angle of rotations in forward direction is equal to that of rotations in reverse direction when the necessary operations have completed without causing the turntable to rotate fully once.

Abstract: The tester and the test method for testing an eccentricity of a head turnout zone of a magnetic disk determine a turnout zone as acceptable or unacceptable by spirally scanning a turnout zone of a magnetic disk with a laser spot by rotating the magnetic disk and continuously moving either the laser spot radially of the magnetic disk or the magnetic disk radially thereof, obtaining a detection signal having amplitude corresponding to an intensity of a scattering light from the magnetic disk irradiated with the laser spot, extracting a first waveform of the detection signal corresponding to an intermediate region between an inside variation region in which an inside boarder line of the turnout zone radially of the magnetic disk by radial movement of the turnout zone caused by an ecentricity of the turnout zone and an outside variation region in which an outside boarder line of the turnout zone radially of the magnetic disk by the radial movement of the turnout zone caused by the eccentricity of the magnetic dis

Abstract: A semiconductor-based radiation-detector element particularly adapted to neutron detection, and the method for making the same, in which a high sensitivity single-crystal semiconductor substrate has diffused therein at-least-one region of .sup.3 He gas, which remain resident therein, whereby, upon application of an inverse bias to the junction in the semiconductor substrate, the colliding of incident neutrons with the resident .sup.3 He gas results in a reaction which produces hole-electron pairs in the depletion layer within the semiconductor, those hole-electron pairs producing output electrical pulses which appear at the output terminals of the detector for utilization by detection and measuring apparatus connected to the semiconductor-based radiation-detector element.

Abstract: A semiconductor-based radiation-detector element particularly adapted to neutron detection, and the method for making the same, in which a high sensitivity single-crystal semiconductor substrate has diffused therein at-least-one region of .sup.3 He gas, which remains resident therein, whereby, upon application of an inverse bias to the junction in the semiconductor substrate, the colliding of incident neutrons with the resident .sup.3 He gas results in a reaction which produces hole-electron pairs in the depletion layer within the semiconductor, those hole-electron pairs producing output electrical pulses which appear at the output terminals of the detector for utilization by detection and measuring apparatus connected to the semiconductor-based radiation-detector element.

Abstract: In the representative embodiment of the invention described in the specification, a boron coating is applied to a semiconductor body having a protective film of a compound of the semiconductor material by heating the semiconductor body to a temperature below 400.degree. C. in a vacuum chamber, introducing diborane gas into the chamber and causing a glow discharge between two electrodes in the chamber.