Patents by Inventor Osamu Ishiwate

Osamu Ishiwate has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for adding impurities to semiconductor base material
    Patent number: 4618381
    Abstract: A method for adding impurities to a semiconductor base material comprises the steps of placing the base material in a vacuum chamber having an atmosphere containing the impurities as dopants, heating the base material to a temperature not exceeding 400.degree. C., and causing a glow discharge in the vacuum chamber. The impurities are introduced as a gas containing, for example, diboron, phosphine, antimony, arsenic, gallium, or as an organic metal gas such as trimethyl gallium, trimethyl indium, or trimethyl aluminum. To cause the dopant atoms to become substitutional by assuming lattice positions, the base material may be subjected to a second glow discharge in an inert gas atmosphere.
    Type: Grant
    Filed: May 24, 1984
    Date of Patent: October 21, 1986
    Assignees: Fuji Electric Corporate Research and Development Ltd., Fuji Electric Company Ltd.
    Inventors: Noritada Sato, Yasukazu Seki, Osamu Ishiwate