Patents by Inventor Osamu Ishiyama

Osamu Ishiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SILICON CARBIDE SEMICONDUCTOR DEVICE
    Publication number: 20180151719
    Abstract: A silicon carbide semiconductor device includes a first conductivity type silicon carbide substrate having an active region and a termination region surrounding the active region, a plurality of unit cells located in the active region, and a termination structure located in the termination region. Each unit cell is provided with a transistor structure. The termination structure includes the silicon carbide semiconductor layer, a second conductivity type second body region surrounding the active region, one or more second conductivity type rings surrounding the second body region, one or more outer-circumferential upper source electrodes surrounding the active region, and an upper gate electrode. The silicon carbide semiconductor device further includes a first protective film and a second protective film.
    Type: Application
    Filed: November 14, 2017
    Publication date: May 31, 2018
    Inventors: TSUNEICHIRO SANO, ATSUSHI OHOKA, TSUTOMU KIYOSAWA, OSAMU ISHIYAMA, TAKAYUKI WAKAYAMA, KOUICHI SAITOU, TAKASHI HASEGAWA, DAISUKE SHINDO, OSAMU KUSUMOTO
  • Silicon carbide semiconductor device
    Patent number: 9985125
    Abstract: A silicon carbide semiconductor device includes a first conductivity type silicon carbide substrate having an active region and a termination region surrounding the active region, a plurality of unit cells located in the active region, and a termination structure located in the termination region. Each unit cell is provided with a transistor structure. The termination structure includes the silicon carbide semiconductor layer, a second conductivity type second body region surrounding the active region, one or more second conductivity type rings surrounding the second body region, one or more outer-circumferential upper source electrodes surrounding the active region, and an upper gate electrode. The silicon carbide semiconductor device further includes a first protective film and a second protective film.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: May 29, 2018
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Tsuneichiro Sano, Atsushi Ohoka, Tsutomu Kiyosawa, Osamu Ishiyama, Takayuki Wakayama, Kouichi Saitou, Takashi Hasegawa, Daisuke Shindo, Osamu Kusumoto