Abstract: An infrared light detection array with a plurality of infrared light detectors, said infrared light detectors each comprising: a supporting leg fixed to said substrate at one end, having a laminated structure of an insulation layer and a wiring layer; and a heat insulation structure portion supported by said supporting leg, comprising an insulation layer having a first surface to serve as a surface of incidence for infrared light to impinge on and a second surface to serve as a surface of incidence for reading light to impinge on, a reflection film which is formed on said second surface of said insulation layer, and a resistor connected with said wiring layer, and as said supporting legs heated up to a detection temperature by said infrared light reversibly warp, said infrared light detectors change the reflection direction of said reading light impinging upon said reflection films.

Abstract: An infrared light detection array with a plurality of infrared light detectors, said infrared light detectors each comprising: a supporting leg fixed to said substrate at one end, having a laminated structure of an insulation layer and a wiring layer; and a heat insulation structure portion supported by said supporting leg, comprising an insulation layer having a first surface to serve as a surface of incidence for infrared light to impinge on and a second surface to serve as a surface of incidence for reading light to impinge on, a reflection film which is formed on said second surface of said insulation layer, and a resistor connected with said wiring layer, and as said supporting legs heated up to a detection temperature by said infrared light reversibly warp, said infrared light detectors change the reflection direction of said reading light impinging upon said reflection films.

Abstract: An infrared sensor includes a substrate, an insulator layer formed on the substrate, and a heat-sensitive semiconductor layer having a temperature dependent electrical resistance with a relatively large temperature coefficient of resistance. In order to improve sensitivity of the heat-sensitive semiconductor layer for detecting infrared rays, high concentration impurity semiconductor regions are positioned on either side of the semiconductor layer to form a semiconductor section. The high concentration impurity semiconductor sections have a higher absorption coefficient of infrared rays than the semiconductor layer. Thus, the semiconductor section itself both detects and absorbs infrared rays with or without providing any heat-absorbing layer. Further, electrodes are connected to each high-concentration impurity layer, which form an ohmic contact therewith.

Abstract: An image sensor includes a plurality of photodiode arrays, each array including a plurality of photodiodes, the arrays being aligned in parallel and closely arranged, at least two charge transfer devices disposed parallel to and on opposite sides of the photodiode arrays. With this arrangement, the clearance between the respective photodiode arrays can be reduced and the charges generated by the photodiodes having shallower potential wells can be completely transferred at high speed.

Abstract: A spin coating apparatus has a refrigerated container which maintains a coating liquid that contains thermosetting materials or thermal crosslinking agents at a temperature which is sufficiently below the temperature of a substrate on which it is to be coated such that the coating liquid will not set. A heat exchanger heats the coating liquid from the reduced temperature of the refrigerated container to the temperature of the substrate just before the coating liquid is applied to the substrate.

Abstract: In a monitoring system for protecting a metal pipe against corrosion, transmission of monitoring signals is carried out by the use of the pipe itself as a transmission line between a center station and a substation, which are coupled to the pipe at center and subordinate locations, respectively. The substation sends data signals over the pipe to the center station. These data signals represent the degree of corrosion that is measured at the subordinate location and are monitored by the center station. When a plurality of substations are coupled to the pipe, the center station selects a substation by transmitting through the pipe an address assigned to the substation. Each substation returns the assigned address to the center station in combination with the signals representing the measured degree of corrosion at the addressed substation. Preferably, the center station produces the selected address twice while each substation produces the assigned address and the measured corrosion signal, twice.